KR20240029551A - 메모리소자용 반도체 기판의 에칭 조성물 및 이것을 이용한 메모리소자용 반도체 기판의 제조방법 - Google Patents

메모리소자용 반도체 기판의 에칭 조성물 및 이것을 이용한 메모리소자용 반도체 기판의 제조방법 Download PDF

Info

Publication number
KR20240029551A
KR20240029551A KR1020237042854A KR20237042854A KR20240029551A KR 20240029551 A KR20240029551 A KR 20240029551A KR 1020237042854 A KR1020237042854 A KR 1020237042854A KR 20237042854 A KR20237042854 A KR 20237042854A KR 20240029551 A KR20240029551 A KR 20240029551A
Authority
KR
South Korea
Prior art keywords
group
semiconductor substrate
carbon atoms
etching
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237042854A
Other languages
English (en)
Korean (ko)
Inventor
토시유키 오이에
토모유키 아다니야
치-리앙 양
포-헝 왕
Original Assignee
미쯔비시 가스 케미칼 컴파니, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 filed Critical 미쯔비시 가스 케미칼 컴파니, 인코포레이티드
Publication of KR20240029551A publication Critical patent/KR20240029551A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H01L21/32134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
KR1020237042854A 2021-07-02 2022-06-29 메모리소자용 반도체 기판의 에칭 조성물 및 이것을 이용한 메모리소자용 반도체 기판의 제조방법 Pending KR20240029551A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-110798 2021-07-02
JP2021110798 2021-07-02
PCT/JP2022/025880 WO2023277048A1 (ja) 2021-07-02 2022-06-29 メモリ素子用半導体基板のエッチング組成物およびこれを用いたメモリ素子用半導体基板の製造方法

Publications (1)

Publication Number Publication Date
KR20240029551A true KR20240029551A (ko) 2024-03-05

Family

ID=84690245

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237042854A Pending KR20240029551A (ko) 2021-07-02 2022-06-29 메모리소자용 반도체 기판의 에칭 조성물 및 이것을 이용한 메모리소자용 반도체 기판의 제조방법

Country Status (6)

Country Link
US (1) US20240287385A1 (https=)
JP (1) JPWO2023277048A1 (https=)
KR (1) KR20240029551A (https=)
CN (1) CN117581338A (https=)
TW (1) TW202311566A (https=)
WO (1) WO2023277048A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202546205A (zh) * 2023-12-13 2025-12-01 日商三菱瓦斯化學股份有限公司 半導體基板清洗用組成物、半導體基板之清洗方法、及半導體基板之製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6363116B2 (ja) * 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
TWI642763B (zh) * 2014-01-27 2018-12-01 Mitsubishi Gas Chemical Company, Inc. 氮化鈦除去用液體組成物、利用該液體組成物之半導體元件之洗滌方法、及半導體元件之製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SPCC 2019 Technical Program, "Wet Etchant for DRAM Word-line Titanium Nitride Recess with Selectivity to Tungsten", Wilson et al., [https://www.linx-consulting.com/wp-content/uploads/2019/04/03-15-W_Yeh-Dupont-Wet_Etchant_for_DRAM_Word_line_TiN_Recess_with_Selectivity_to_W.pdf]

Also Published As

Publication number Publication date
JPWO2023277048A1 (https=) 2023-01-05
CN117581338A (zh) 2024-02-20
US20240287385A1 (en) 2024-08-29
TW202311566A (zh) 2023-03-16
WO2023277048A1 (ja) 2023-01-05

Similar Documents

Publication Publication Date Title
EP2798669B1 (en) Compositions and methods for selectively etching titanium nitride
JP6723152B2 (ja) 窒化チタンを選択的にエッチングするための組成物及び方法
KR20150126637A (ko) 티타늄 나이트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
TWI726343B (zh) 選擇性蝕刻材料之改良
US20240117277A1 (en) Composition for cleaning semiconductor substrate, method for cleaning semiconductor substrate, and method for producing semiconductor substrate
KR20240029551A (ko) 메모리소자용 반도체 기판의 에칭 조성물 및 이것을 이용한 메모리소자용 반도체 기판의 제조방법
JP7827057B2 (ja) メモリ素子用半導体基板の製造方法
TW202208597A (zh) 矽蝕刻液以及使用該矽蝕刻液之矽元件的製造方法及矽基板的處理方法
US20260022311A1 (en) Semiconductor substrate cleaning composition, and method for producing semiconductor substrate using same
CN116806366A (zh) 半导体基板清洗用组合物、以及半导体基板的清洗方法和制造方法
KR20230122597A (ko) 실리콘 에칭액, 그 에칭액을 사용한 실리콘 디바이스의 제조 방법 및 기판 처리 방법
KR102953841B1 (ko) 실리콘 에칭액, 그리고 그 에칭액을 사용한 실리콘 디바이스의 제조 방법 및 실리콘 기판의 처리 방법
US12466999B2 (en) Silicon etching liquid, and method for producing silicon device and method for processing silicon substrate, each using said etching liquid
KR20250103640A (ko) 에칭용 수성 조성물, 그것을 이용한 에칭방법 및 반도체기판의 제조방법
US20240150654A1 (en) Composition for the selective etching of silicon
KR20250027679A (ko) 반도체기판 세정용 조성물, 반도체기판의 세정방법, 및 반도체기판의 제조방법
KR20210119639A (ko) 실리콘 질화막 식각 조성물
JP2010067982A (ja) エッチング液
KR20170137310A (ko) 식각용 조성물의 성능 평가 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000