CN117581338A - 存储元件用半导体基板的蚀刻组合物和使用其的存储元件用半导体基板的制造方法 - Google Patents

存储元件用半导体基板的蚀刻组合物和使用其的存储元件用半导体基板的制造方法 Download PDF

Info

Publication number
CN117581338A
CN117581338A CN202280045082.4A CN202280045082A CN117581338A CN 117581338 A CN117581338 A CN 117581338A CN 202280045082 A CN202280045082 A CN 202280045082A CN 117581338 A CN117581338 A CN 117581338A
Authority
CN
China
Prior art keywords
semiconductor substrate
memory element
carbon atoms
etching
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280045082.4A
Other languages
English (en)
Chinese (zh)
Inventor
尾家俊行
安谷屋智幸
杨智量
王舶纮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Publication of CN117581338A publication Critical patent/CN117581338A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
CN202280045082.4A 2021-07-02 2022-06-29 存储元件用半导体基板的蚀刻组合物和使用其的存储元件用半导体基板的制造方法 Pending CN117581338A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021110798 2021-07-02
JP2021-110798 2021-07-02
PCT/JP2022/025880 WO2023277048A1 (ja) 2021-07-02 2022-06-29 メモリ素子用半導体基板のエッチング組成物およびこれを用いたメモリ素子用半導体基板の製造方法

Publications (1)

Publication Number Publication Date
CN117581338A true CN117581338A (zh) 2024-02-20

Family

ID=84690245

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280045082.4A Pending CN117581338A (zh) 2021-07-02 2022-06-29 存储元件用半导体基板的蚀刻组合物和使用其的存储元件用半导体基板的制造方法

Country Status (6)

Country Link
US (1) US20240287385A1 (https=)
JP (1) JPWO2023277048A1 (https=)
KR (1) KR20240029551A (https=)
CN (1) CN117581338A (https=)
TW (1) TW202311566A (https=)
WO (1) WO2023277048A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202546205A (zh) * 2023-12-13 2025-12-01 日商三菱瓦斯化學股份有限公司 半導體基板清洗用組成物、半導體基板之清洗方法、及半導體基板之製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6363116B2 (ja) * 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
TWI642763B (zh) * 2014-01-27 2018-12-01 Mitsubishi Gas Chemical Company, Inc. 氮化鈦除去用液體組成物、利用該液體組成物之半導體元件之洗滌方法、及半導體元件之製造方法

Also Published As

Publication number Publication date
JPWO2023277048A1 (https=) 2023-01-05
US20240287385A1 (en) 2024-08-29
TW202311566A (zh) 2023-03-16
KR20240029551A (ko) 2024-03-05
WO2023277048A1 (ja) 2023-01-05

Similar Documents

Publication Publication Date Title
KR102102792B1 (ko) 티타늄 나이트라이드의 선택적인 에칭을 위한 조성물 및 방법
JP2019134168A (ja) 窒化チタンを選択的にエッチングするための組成物及び方法
CN116096837B (zh) 氮化物蚀刻剂组合物和方法
TWI726343B (zh) 選擇性蝕刻材料之改良
US10577567B2 (en) Cleaning compositions for removing post etch residue
EP4293097A1 (en) Composition for cleaning semiconductor substrate, method for cleaning semiconductor substrate, and method for producing semiconductor substrate
CN117581338A (zh) 存储元件用半导体基板的蚀刻组合物和使用其的存储元件用半导体基板的制造方法
JP7827057B2 (ja) メモリ素子用半導体基板の製造方法
TW202208597A (zh) 矽蝕刻液以及使用該矽蝕刻液之矽元件的製造方法及矽基板的處理方法
US20260022311A1 (en) Semiconductor substrate cleaning composition, and method for producing semiconductor substrate using same
US20240010915A1 (en) Etching Solution For Titanium Nitride And Molybdenum Conductive Metal Lines
CN116806366A (zh) 半导体基板清洗用组合物、以及半导体基板的清洗方法和制造方法
KR20230122597A (ko) 실리콘 에칭액, 그 에칭액을 사용한 실리콘 디바이스의 제조 방법 및 기판 처리 방법
KR102953841B1 (ko) 실리콘 에칭액, 그리고 그 에칭액을 사용한 실리콘 디바이스의 제조 방법 및 실리콘 기판의 처리 방법
KR20190019719A (ko) 실리콘 질화막 식각 방법 및 이를 이용한 반도체 소자의 제조 방법
TW202438644A (zh) 蝕刻用水性組成物、使用其之蝕刻方法及半導體基板之製造方法
US20240150654A1 (en) Composition for the selective etching of silicon
TW202208596A (zh) 矽蝕刻液以及使用該蝕刻液之矽元件之製造方法及矽基板之處理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination