JPWO2023248418A5 - - Google Patents

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Publication number
JPWO2023248418A5
JPWO2023248418A5 JP2024528202A JP2024528202A JPWO2023248418A5 JP WO2023248418 A5 JPWO2023248418 A5 JP WO2023248418A5 JP 2024528202 A JP2024528202 A JP 2024528202A JP 2024528202 A JP2024528202 A JP 2024528202A JP WO2023248418 A5 JPWO2023248418 A5 JP WO2023248418A5
Authority
JP
Japan
Prior art keywords
gate conductor
conductor layer
impurity region
memory device
page
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024528202A
Other languages
English (en)
Japanese (ja)
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JPWO2023248418A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/025073 external-priority patent/WO2023248418A1/ja
Publication of JPWO2023248418A1 publication Critical patent/JPWO2023248418A1/ja
Publication of JPWO2023248418A5 publication Critical patent/JPWO2023248418A5/ja
Pending legal-status Critical Current

Links

JP2024528202A 2022-06-23 2022-06-23 Pending JPWO2023248418A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/025073 WO2023248418A1 (ja) 2022-06-23 2022-06-23 半導体素子を用いたメモリ装置

Publications (2)

Publication Number Publication Date
JPWO2023248418A1 JPWO2023248418A1 (https=) 2023-12-28
JPWO2023248418A5 true JPWO2023248418A5 (https=) 2025-03-10

Family

ID=89322797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024528202A Pending JPWO2023248418A1 (https=) 2022-06-23 2022-06-23

Country Status (3)

Country Link
US (1) US20230422473A1 (https=)
JP (1) JPWO2023248418A1 (https=)
WO (1) WO2023248418A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022172318A1 (ja) * 2021-02-09 2022-08-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3808763B2 (ja) * 2001-12-14 2006-08-16 株式会社東芝 半導体メモリ装置およびその製造方法
JP5078338B2 (ja) * 2006-12-12 2012-11-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR102529073B1 (ko) * 2015-04-29 2023-05-08 제노 세미컨덕터, 인크. 백바이어스를 이용한 드레인 전류가 향상된 트랜지스터 및 메모리 셀
CN116724354A (zh) * 2020-12-25 2023-09-08 新加坡优尼山帝斯电子私人有限公司 包含半导体元件的存储器装置

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