Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
  • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
  • G11C11/409—Read-write [R-W] circuits 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
  • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
  • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
  • G11C11/408—Address circuits
  • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
  • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
  • G11C11/409—Read-write [R-W] circuits 
  • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
  • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
  • G11C11/409—Read-write [R-W] circuits 
  • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C5/00—Details of stores covered by group G11C11/00
  • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
  • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Definitions

• the present invention relates to a memory device using a semiconductor element.
• SGT Short Gate Transistor
• Non-Patent Document 1 is used as a selection transistor to connect a DRAM (Dynamic Random Access Memory, see Non-Patent Document 2) with a capacitor connected, and a variable resistance element.
• PCM Phase Change Memory, see e.g. Non-Patent Document 3
• RRAM Resistive Random Access Memory
• MRAM Magneto-resistive Random Access Memory
• DRAM memory cells (see Patent Document 2 and Non-Patent Documents 6 to 10) that are configured with one MOS transistor and do not have a capacitor. For example, holes, electron groups, or part or all of the hole groups generated in the channel by the impact ionization phenomenon due to the current between the source and drain of an N-channel MOS transistor are held in the channel to store logic storage data. 1” is written. Then, the hole group is removed from the channel to write logical storage data "0". In this memory cell, there are randomly written "1" memory cells and "0" written memory cells for a common selected word line.
• the floating body channel voltage of the selected memory cell connected to the selected word line varies greatly due to capacitive coupling between the gate electrode and the channel.
• the challenges of this memory cell are to improve the reduction in operating margin due to floating body channel voltage fluctuations, and to improve the reduction in data retention characteristics due to the removal of part of the hole group, which is the signal charge accumulated in the channel. It is.
• Twin-Transistor MOS transistor memory element in which one memory cell is formed using two MOS transistors in an SOI layer (see, for example, Patent Documents 3 and 4, and Non-Patent Document 11).
• an N + layer that serves as a source or drain that separates floating body channels of two MOS transistors is formed in contact with an insulating layer on the substrate side.
• This N + layer electrically isolates the floating body channels of the two MOS transistors.
• a group of holes, which are signal charges, are accumulated only in the floating body channel of one MOS transistor.
• the other MOS transistor serves as a switch for reading out the hole group of the signal accumulated in one MOS transistor.
• a group of holes, which are signal charges are accumulated in the channel of one MOS transistor. The problem is to improve the deterioration in data retention characteristics caused by the removal of part of the hole group, which is the signal charge.
• a dynamic flash memory cell 111 shown in FIG. 3 that is configured with a MOS transistor and does not have a capacitor (see Patent Document 5 and Non-Patent Document 12).
• a floating body semiconductor matrix 102 is provided on the SiO 2 layer 101 of the SOI substrate.
• N + layer 103 connected to the source line SL
• N + layer 104 connected to the bit line BL.
• the first gate insulating layer 109a is connected to the N + layer 103 and covers the floating body semiconductor base 102, and is connected to the first gate insulating layer 109a via the N + layer 104 and the slit insulating film 110.
• a second gate insulating layer 109b covering the floating body semiconductor base body 102.
• a slit insulating layer 110 is provided between the first gate conductor layer 105a and the second gate conductor layer 105b.
• a memory cell 111 of a DFM Dynamic Flash Memory
• the configuration may be such that the source line SL is connected to the N + layer 104 and the bit line BL is connected to the N + layer 103.
• the floating body semiconductor base body 102 covered with the first gate conductor layer 105a is operated in the linear region.
• an inversion layer 107b is formed over the entire surface of the second N-channel MOS transistor region without a pinch-off point.
• the inversion layer 107b formed under the second gate conductor layer 105b connected to the word line WL serves as a substantial drain of the first N-channel MOS transistor region.
• the electric field becomes maximum in the boundary region of the channel region between the first N-channel MOS transistor region and the second N-channel MOS transistor region, and an impact ionization phenomenon occurs in this region.
• the electron group among the electron/hole groups generated by the impact ionization phenomenon is removed from the floating body semiconductor matrix 102, and part or all of the hole group 106 is transferred to the floating body semiconductor matrix 102.
• a memory write operation is performed by holding it in the body semiconductor matrix 102. This state becomes logical storage data "1".
• the hole group 106 is moved into a floating body. It is removed from the semiconductor matrix 102 to perform an erasing operation. This state becomes logical storage data "0".
• the voltage applied to the first gate conductor layer 105a connected to the plate line PL is set to be higher than the threshold voltage when the logical storage data is "1" and higher than the threshold voltage when the logical storage data is "0".
• the operating margin can be significantly expanded compared to memory cells.
• the channels of the first and second N-channel MOS transistor regions whose gates are the first gate conductor layer 105a connected to the plate line PL and the second gate conductor layer 105b connected to the word line WL are By connecting through the floating body semiconductor base body 102, voltage fluctuations in the floating body semiconductor base body 102 when a selection pulse voltage is applied to the word line WL are greatly suppressed.
• Critoloveanu “A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration,” Electron Device Letters, Vol. 35, No.2, pp. 179-181 (2012) T. Ohsawa, K. Fujita, T. Higashi, Y. Iwata, T. Kajiyama, Y. Asao, and K. Sunouchi: “Memory design using a one-transistor gain cell on SOI,” IEEE JSSC, vol.37, No.11, pp1510-1522 (2002). T. Shino, N. Kusunoki, T. Higashi, T. Ohsawa, K. Fujita, K. Hatsuda, N. Ikumi, F.
• Dynamic flash memory cells require stable memory cell rewrite operations with low power consumption.
• a memory device using a semiconductor element includes: A memory device in which a page is configured by a plurality of memory cells arranged in a row direction on a substrate, and the plurality of pages are arranged in a column direction when viewed from above,
• the memory cells included in each page are: a semiconductor body standing vertically or extending horizontally on the substrate; a first impurity layer and a second impurity layer at both ends of the semiconductor matrix; surrounds a part or all of the side surface of the semiconductor matrix on the first impurity layer side between the first impurity layer and the second impurity layer, and is in contact with the first impurity layer, or a first gate insulating layer in close proximity; a second gate insulating layer surrounding the side surface of the semiconductor base body, connected to the first gate insulating layer, and in contact with or close to the second impurity layer; a first gate conductor layer that partially or entirely covers the first gate insulating layer; a second gate conductor layer covering
• One side is connected to the word line, the other side is connected to the plate line,
• a main portion of the hole group in the channel semiconductor layer of the selected memory cell is transferred to the first an erase operation that collects holes in the channel semiconductor layer on one side of the gate conductor layer and the second gate conductor layer and annihilates a part of the hole group to reduce the number of holes; performing a page write operation in which the number of holes in the channel semiconductor layer of the memory cell is increased by an impact ionization phenomenon; (first invention).
• At least one page is selected during the erasing operation, and all the memory cells included in the selected page are simultaneously erased (second invention).
• a voltage is applied to the first impurity layer, the second impurity layer, the first gate conductor layer, and the second gate conductor layer during the erasing operation.
• the source line is applied with a ground voltage
• the bit line is applied with a positive voltage
• the word A positive voltage is applied to one or both of the line and the plate line (third invention).
• a voltage is applied to the first impurity layer, the second impurity layer, the first gate conductor layer, and the second gate conductor layer during the erasing operation.
• the source line is applied with a ground voltage
• the bit line is applied with a positive voltage
• the word is characterized in that after a positive voltage is applied to one of the wire and the plate wire, a positive voltage is applied to the other (fourth invention).
• the word line and the plate line are arranged in parallel in a plan view, and the bit line is arranged in a direction perpendicular to the word line and the plate line in a plan view. (fifth invention).
• a first gate capacitance between the first gate conductor layer or the second gate conductor layer and the channel semiconductor layer to which the plate line is connected is connected to the word line.
• the second gate capacitance is larger than a second gate capacitance between the first gate conductor layer or the second gate conductor layer and the channel semiconductor layer (sixth invention).
• the source line is separated for each of the memory cells arranged in the column direction and is arranged parallel to the word line and the plate line when viewed in plan. (Seventh invention).
• the source line is arranged to be commonly connected to all the memory cells of the adjacent page in plan view. (Eighth invention).
• At least two or more of the plate lines of the adjacent pages are disposed in common in a plan view (ninth invention).
• the channel semiconductor layer is a P-type semiconductor layer
• the first impurity layer and the second impurity layer are N-type semiconductor layers (tenth invention).
• the memory cells connected to at least two sets of the pages are selectively erased (eleventh invention).
• the word line and the plate line are connected to a row decoder circuit, a row address is input to the row decoder circuit, and the page is selected according to the row address. (12th invention).
• the bit line is connected to a sense amplifier circuit, the sense amplifier circuit is connected to a column decoder circuit, a column address is inputted to the column decoder circuit, and according to the column address, the bit line is connected to a sense amplifier circuit, and the sense amplifier circuit is connected to a column decoder circuit.
• the present invention is characterized in that the sense amplifier circuit is selectively connected to the input/output circuit (13th invention).
• FIG. 1 is a structural diagram of a memory device having an SGT according to a first embodiment
• FIG. FIG. 3 is a diagram for explaining an erase operation mechanism of the memory device according to the first embodiment.
• FIG. 3 is a diagram for explaining an erase operation mechanism of the memory device according to the first embodiment.
• FIG. 3 is a diagram for explaining an erase operation mechanism of the memory device according to the first embodiment.
• FIG. 3 is a diagram for explaining an erase operation mechanism of the memory device according to the first embodiment.
• FIG. 3 is a diagram for explaining an erase operation mechanism of the memory device according to the first embodiment.
• FIG. 3 is a diagram for explaining an erase operation mechanism of the memory device according to the first embodiment.
• FIG. 3 is a diagram for explaining an erase operation mechanism of the memory device according to the first embodiment.
• FIG. 2 is a diagram for explaining a conventional dynamic flash memory.
• a memory device using a semiconductor element (hereinafter referred to as a dynamic flash memory) according to an embodiment of the present invention will be described with reference to the drawings.
• FIGS. 1 and 2 The structure and operating mechanism of the dynamic flash memory cell according to the first embodiment of the present invention will be explained using FIGS. 1 and 2.
• the structure of a dynamic flash memory cell will be explained using FIG. 1.
• the erase operation mechanism will be explained using FIG. 2.
• FIG. 1 shows the structure of a dynamic flash memory cell according to a first embodiment of the present invention.
• a silicon semiconductor pillar 2 formed on a substrate and having a conductivity type of P type or i type (intrinsic type) (hereinafter, a silicon semiconductor pillar is referred to as a "Si pillar") (a “semiconductor matrix” in the claims)
• N + layers 3a and 3b (the “first impurity layer” and “second impurity layer” in the claims) are located above and below the N + layers 3a and 3b, where one becomes the source and the other becomes the drain. ”) is formed.
• a first gate insulating layer 4a (which is an example of a “first gate insulating layer” in the claims) and a second gate insulating layer 4b (an example of a “first gate insulating layer” in the claims) surround this channel region 7. 2) is formed.
• the first gate insulating layer 4a and the second gate insulating layer 4b are in contact with or close to the N + layers 3a and 3b, which become the source and drain, respectively.
• a first gate conductor layer 5a (which is an example of a "first gate conductor layer” in the claims) and a second gate conductor layer surround the first gate insulating layer 4a and the second gate insulating layer 4b.
• a gate conductor layer 5b (which is an example of a "second gate conductor layer” in the claims) is formed respectively.
• the first gate conductor layer 5a and the second gate conductor layer 5b are separated by an insulating layer 6.
• the channel region 7 between the N + layers 3a and 3b includes a first channel region 7a surrounded by the first gate insulating layer 4a and a second channel region surrounded by the second gate insulating layer 4b. 7b and more.
• a dynamic flash memory cell 10 is formed.
• the N + layer 3a serving as a source is connected to a source line SL (an example of a "source line” in the claims), and the N + layer 3b serving as a drain is connected to a bit line BL (an example of a "bit line” in the claims).
• the first gate conductor layer 5a is connected to the plate line PL (which is an example of the "plate line” in the claims), and the second gate conductor layer 5b is connected to the word line WL (which is an example of the "plate line” in the claims).
• the first gate capacitance (which is an example of the "first gate capacitance” in the claims) of the first gate conductor layer 5a to which the plate line PL is connected is the same as that of the first gate conductor layer 5a to which the word line WL is connected. It is desirable to have a structure that is larger than the second gate capacitance (which is an example of the "second gate capacitance” in the claims) of the second gate conductor layer 5b.
• FIG. 2A shows a memory block diagram including main circuits for explaining the erase operation.
• the word lines WL0 to WL2 and the plate lines PL0 to PL2 are connected to a row decoder circuit RDEC (which is an example of a "row decoder circuit” in the claims), and the row decoder circuit has a row address RAD (in the claims). is an example of a "row address"), and pages P0 to P2 are selected according to the row address RAD.
• the bit lines BL0 to BL2 are connected to a sense amplifier circuit SA, and the sense amplifier circuit SA is connected to a column decoder circuit CDEC (which is an example of a "column decoder circuit” in the claims).
• a column address CAD (which is an example of a "column address” in the claims) is input to the CDEC, and the sense amplifier circuit SA (which is an example of a “sense amplifier circuit” in the claims) is input according to the column address CAD. is selectively connected to the input/output circuit IO (which is an example of the "input/output circuit" in the claims).
• Each dynamic flash memory cell configuring the memory block in FIG. 2A differs from FIG. 1 in that plate lines PL0 to PL2 are provided on the bit line BL0 to BL2 side, and word lines WL0 to WL2 are provided on the source line SL0 to SL2 side. ing.
• a total of nine memory cells C00 to C22 in 3 rows x 3 columns are shown in a plan view, but the number of memory cells in an actual memory block is larger than this.
• the row direction or “column shape”
• the direction perpendicular to this is called the "column direction” (or “column shape”).
• source lines SL0 to SL2, plate lines PL0 to PL2, and word lines WL0 to WL2 are arranged in parallel, and bit lines BL0 to BL2 are arranged in a direction perpendicular to them.
• memory cells C10 to C12 connected to the plate line PL1, word line WL1, and source line SL1 of an arbitrary page P1 are selected and an erase operation is performed. Note that it is possible to similarly select memory cells belonging to any page and perform a page write operation (which is an example of a "page write operation" in the claims) and a page read operation.
• FIG. 2B shows an operation waveform diagram of the erase operation.
• an erase operation starts and, for example, page P1 is selectively erased.
• the plate line PL1 rises from the ground voltage Vss to the first voltage V1.
• the ground voltage Vss is, for example, 0V.
• the first voltage V1 is, for example, 2V, and is a voltage at which the N-channel MOS transistor region in which the plate line PL1 surrounds the channel semiconductor layer operates in a linear region.
• the bit lines BL0 to BL2 rise from the ground voltage Vss to the second voltage V2.
• the second voltage V2 is, for example, 0.6V.
• the off voltage Vss is applied to WL1 during this period, so there is no current between the source line SL1 and the bit lines BL0 to BL2 in a steady state. does not flow.
• FIG. 2C(a) shows a state in which the voltage of 0V is applied to the bit line BL, 0V to the source line SL, 0V to the plate line PL, and 0V to the word line WL.
• a voltage of 0.6V is applied to the bit line BL, 0V to the source line SL, 2V to the plate line PL, and 0V to the word line WL, as shown in FIG. 2C(b)
• holes with positive charges appear.
• the main portion of group 9 gathers from the plate line PL side to which 2V is applied to the first gate conductor layer 5a side connected to the word line WL to which 0V is applied.
• the voltage of the channel semiconductor layer 7 surrounded by the word line WL increases. Therefore, the PN junction between the N + layer 3a of the source line SL and the P channel semiconductor layer 7 becomes forward biased, and the excess hole group 9 is discharged to the N + layer 3a of the source line SL. Since the concentration of the hole group 9 gathered in the channel semiconductor layer 7 of the P layer on the word line WL side is sufficiently higher than the hole concentration facing the N + layer 3a, the hole group 9 is concentrated due to the concentration gradient.
• the power consumed here is only due to the electrons flowing in from the source line SL, and since no current regularly flows between the N + layers 3a and 3b, the power consumption is extremely low compared to the power consumption during page write operation. small.
• This increases the threshold voltage of the N-channel MOS transistor region in which the word line WL and the plate line PL surround the channel semiconductor layer 7. Therefore, as shown in FIG. 2C (c), even if the voltage of the word line WL is increased, no current flows.
• a page erase operation is performed using the voltage V FB "0" in the "0" erased state of the channel region 7 as the first data holding voltage, and is assigned to logical storage data "0".
• an inversion layer 11 is formed at the outer periphery of the channel semiconductor layer 7 surrounded by the second gate conductor layer 5b connected to the plate line PL. Ru.
• This inversion layer 11 is connected to the N + layer 3b and has many electrons.
• the bit lines BL0 to BL2 return from the second voltage V2 to the ground voltage Vss, and the fourth At time T4, the plate line PL1 returns from the first voltage V1 to the ground voltage Vss, and the page erase operation ends.
• the word line WL1 may be raised from the ground voltage Vss to the third voltage V3 at a fifth time T5 after the second time T2 in FIG. 2B.
• the third voltage V3 is, for example, 0.6V.
• the PN junction between the N + layer 3a of the source line SL and the P channel semiconductor layer 7 becomes forward biased again, and the excess hole group 9 is It is further discharged to the N + layer 3a of the source line SL.
• the threshold voltage of the N-channel MOS transistor region where word line WL1 and plate line PL1 surround channel semiconductor layer 7 becomes even higher.
• two or more pages P0 and P1 may be selected and erased at the same time. For example, if a memory block has 1 kb (1024) pages, a block erase operation may be performed on the entire block. This is because the erase operation can be performed with a much smaller current than the page write operation. As a result, the system speed for block rewriting can be significantly increased.
• the plate line PL may be arranged to be commonly connected to the memory cells of the adjacent page.
• the source line SL may be arranged to be commonly connected to all the memory cells of the adjacent page. This results in greater design and process freedom.
• the dynamic flash memory operation described in this embodiment can be performed.
• circular, elliptical, and rectangular dynamic flash memory cells may be mixed on the same chip.
• a first gate insulating layer 4a and a second gate insulating layer 4b are provided that surround the entire side surface of the Si pillar 2 standing vertically on the substrate.
• the dynamic flash memory device has been described using as an example an SGT having a first gate conductor layer 5a and a second gate conductor layer 5b surrounding the entirety of the second gate insulating layer 4b.
• the present dynamic flash memory element may have any structure as long as it satisfies the condition that the hole group 9 generated by the impact ionization phenomenon is retained in the channel region 7.
• the channel region 7 may have a floating body structure separated from the substrate 1.
• the semiconductor matrix of the channel region is formed on the substrate 1.
• GAA Gate All Around: see non-patent document 13
• Nanosheet technology see, for example, non-patent document 14
• the semiconductor matrix of the channel region is formed on the substrate 1.
• the above-mentioned dynamic flash memory operation is possible even if the semiconductor matrix is formed horizontally to the substrate (so that the central axis of the semiconductor matrix is parallel to the substrate).
• a structure in which a plurality of GAA or Nanosheets formed in the horizontal direction are stacked may be used.
• SOI Silicon On Insulator
• the bottom of the channel region is in contact with the insulating layer of the SOI substrate, and the other channel region is surrounded by a gate insulating layer and an element isolation insulating layer.
• the channel region has a floating body structure.
• the dynamic flash memory device provided by this embodiment only needs to satisfy the condition that the channel region has a floating body structure. Further, even in a structure in which a Fin transistor (see, for example, Non-Patent Document 15) is formed on an SOI substrate, this dynamic flash operation can be performed if the channel region has a floating body structure.
• FIGS. 2A to 2G and their explanations examples of erase operation conditions are shown.
• the source line SL, plate line PL, bit line BL the voltage applied to the word line WL may be changed.
• the potential distributions of the first channel region 7a and the second channel region 7b are connected. .
• the channel regions 7 of the first channel region 7a and the second channel region 7b are connected in the region surrounded by the insulating layer 6 in the vertical direction.
• the vertical length of the first gate conductor layer 5a connected to the plate line PL is made longer than the vertical length of the second gate conductor layer 5b connected to the word line WL, It is desirable that C PL > C WL .
• simply adding the plate line PL reduces the capacitive coupling ratio (C WL /(C PL +C WL +C BL +C SL )) of the word line WL to the channel region 7. As a result, the potential fluctuation ⁇ V FB in the channel region 7 of the floating body becomes smaller.
• ⁇ cover'' when ⁇ a gate insulating layer, a gate conductor layer, etc. covers a channel, etc.'' is defined as ⁇ covering'' when it is used to surround the entire channel, such as in SGT or GAA. This also includes cases where it is surrounded by leaving a part of it, as in the case of a transistor, and cases where it is overlapped with a flat object, such as with a planar type transistor.
• the first gate conductor layer 5a surrounds the entire first gate insulating layer 4a.
• the first gate conductor layer 5a may have a structure in which it partially surrounds the first gate insulating layer 4a in plan view.
• This first gate conductor layer 5a may be divided into at least two gate conductor layers, each of which may be operated as a plate line PL electrode.
• the second gate conductor layer 5b may be divided into two or more parts, each of which may be operated synchronously or asynchronously as a word line conductor electrode. This allows dynamic flash memory operation.
• the first gate conductor layer 5a may be connected to the word line WL, and the second gate conductor layer 5b may be connected to the plate line PL. This also enables the dynamic flash memory operation described above.
• the dynamic flash memory cell according to the first embodiment of the present invention is characterized by an erase operation.
• this erase operation there is no need to apply a negative voltage to the source line SL, bit line BL, etc.
• a negative voltage generation circuit Negative Charge Pump
• Twin Well Structure double well structure
• power consumption can be reduced.
• positive voltage and negative voltage are mixed in the memory core circuit, large-capacity well charging is not necessary to cut off the negative voltage, and it is possible to significantly increase speed and reduce power consumption.
• the source line SL, word line WL, and plate line PL are arranged parallel to the page P. Furthermore, no negative voltage is used for circuit operation of the memory block. As a result, it becomes possible to independently control the word line WL, plate line PL, and source line SL that control each page.
• the word line WL, plate line PL, and source line SL of an unselected page can be set to the ground voltage Vss. Accordingly, disturbance caused by the selected page to non-selected pages during the page erase operation can be completely prevented.
• Si pillars are formed in the present invention, semiconductor pillars made of a semiconductor material other than Si may also be used. This also applies to other embodiments of the present invention.
• Non-Patent Document 10 In addition, in writing "1", electron-hole pairs are generated by the impact ionization phenomenon using the gate induced drain leakage (GIDL) current described in Non-Patent Document 10.
• the inside of the floating body FB may be filled with a group of holes. This also applies to other embodiments of the present invention.
• a dynamic flash memory operation can also be performed in a structure in which the polarities of the conductivity types of the N + layers 3a, 3b and the P layer Si pillar 2 are reversed.
• the majority carriers are electrons. Therefore, a group of electrons generated by impact ionization is stored in the channel region 7, and a "1" state is set.
• a memory block may be formed by arranging the Si columns of memory cells two-dimensionally, in a square lattice shape, or in an orthorhombic lattice shape.
• the Si pillars connected to one word line may be arranged in a zigzag shape or a sawtooth shape, with a plurality of Si pillars on one side. This also applies to other embodiments.
• a dynamic flash memory which is a memory device using a high-density and high-performance SGT, can be obtained.
• Dynamic flash memory cell 2 Si pillars 3a, 3b having conductivity type of P type or i type (intrinsic type): N + layer 7: Channel regions 4a, 4b: Gate insulating layers 5a, 5b: Gate conductor layer 6 : Insulating layer 9 for separating two gate conductor layers: Hole BL: Bit line SL: Source line PL: Plate line WL: Word line FB: Floating body T1 to T5: First time to fifth time V1 to V3: First voltage to third voltage C00 to C22: Memory cells SL0 to SL2: Source lines BL0 to BL2: Bit lines PL0 to PL2: Plate lines WL0 to WL2: Word lines RDEC: Row address circuit RAD: Row address SA: Sense amplifier circuit CDEC: Column decoder circuit CAD : Column address IO: Input/output circuit 111: DRAM memory cell without a capacitor 100: SOI substrate 101: SiO 2 film 102 of SOI substrate: Floating body

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• 2022
  • 2022-06-23 WO PCT/JP2022/025073 patent/WO2023248418A1/ja not_active Ceased
  • 2022-06-23 JP JP2024528202A patent/JPWO2023248418A1/ja active Pending
• 2023
  • 2023-06-20 US US18/337,988 patent/US20230422473A1/en active Pending

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