JPWO2023166827A5 - - Google Patents
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- Publication number
- JPWO2023166827A5 JPWO2023166827A5 JP2024504375A JP2024504375A JPWO2023166827A5 JP WO2023166827 A5 JPWO2023166827 A5 JP WO2023166827A5 JP 2024504375 A JP2024504375 A JP 2024504375A JP 2024504375 A JP2024504375 A JP 2024504375A JP WO2023166827 A5 JPWO2023166827 A5 JP WO2023166827A5
- Authority
- JP
- Japan
- Prior art keywords
- interlayer insulating
- insulating layer
- conductive layer
- semiconductor device
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022033875 | 2022-03-04 | ||
| PCT/JP2022/047319 WO2023166827A1 (ja) | 2022-03-04 | 2022-12-22 | 半導体装置および半導体モジュール |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023166827A1 JPWO2023166827A1 (https=) | 2023-09-07 |
| JPWO2023166827A5 true JPWO2023166827A5 (https=) | 2024-11-11 |
Family
ID=87883674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024504375A Pending JPWO2023166827A1 (https=) | 2022-03-04 | 2022-12-22 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240421049A1 (https=) |
| JP (1) | JPWO2023166827A1 (https=) |
| CN (1) | CN118511281A (https=) |
| WO (1) | WO2023166827A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12464761B2 (en) * | 2022-11-30 | 2025-11-04 | Texas Instruments Incorporated | LOCOS fillet for drain reduced breakdown in high voltage transistors |
| JP2024136863A (ja) * | 2023-03-24 | 2024-10-04 | 株式会社東芝 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227238A (ja) * | 2007-03-14 | 2008-09-25 | Toyota Central R&D Labs Inc | 半導体装置 |
| US9129819B2 (en) * | 2011-08-05 | 2015-09-08 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
| JP5686203B2 (ja) * | 2012-03-22 | 2015-03-18 | トヨタ自動車株式会社 | 半導体装置 |
| JP2013179327A (ja) * | 2013-04-23 | 2013-09-09 | Mitsubishi Electric Corp | 半導体装置 |
| JP6287958B2 (ja) * | 2015-05-27 | 2018-03-07 | トヨタ自動車株式会社 | 半導体装置 |
-
2022
- 2022-12-22 WO PCT/JP2022/047319 patent/WO2023166827A1/ja not_active Ceased
- 2022-12-22 CN CN202280087530.7A patent/CN118511281A/zh active Pending
- 2022-12-22 JP JP2024504375A patent/JPWO2023166827A1/ja active Pending
-
2024
- 2024-08-30 US US18/820,361 patent/US20240421049A1/en active Pending
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