JP2003273359A5 - - Google Patents

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Publication number
JP2003273359A5
JP2003273359A5 JP2002072032A JP2002072032A JP2003273359A5 JP 2003273359 A5 JP2003273359 A5 JP 2003273359A5 JP 2002072032 A JP2002072032 A JP 2002072032A JP 2002072032 A JP2002072032 A JP 2002072032A JP 2003273359 A5 JP2003273359 A5 JP 2003273359A5
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JP
Japan
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JP2002072032A
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English (en)
Japanese (ja)
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JP3973934B2 (ja
JP2003273359A (ja
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Priority to JP2002072032A priority Critical patent/JP3973934B2/ja
Priority claimed from JP2002072032A external-priority patent/JP3973934B2/ja
Publication of JP2003273359A publication Critical patent/JP2003273359A/ja
Publication of JP2003273359A5 publication Critical patent/JP2003273359A5/ja
Application granted granted Critical
Publication of JP3973934B2 publication Critical patent/JP3973934B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002072032A 2002-03-15 2002-03-15 高耐圧半導体装置 Expired - Fee Related JP3973934B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002072032A JP3973934B2 (ja) 2002-03-15 2002-03-15 高耐圧半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002072032A JP3973934B2 (ja) 2002-03-15 2002-03-15 高耐圧半導体装置

Publications (3)

Publication Number Publication Date
JP2003273359A JP2003273359A (ja) 2003-09-26
JP2003273359A5 true JP2003273359A5 (https=) 2005-06-30
JP3973934B2 JP3973934B2 (ja) 2007-09-12

Family

ID=29202140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002072032A Expired - Fee Related JP3973934B2 (ja) 2002-03-15 2002-03-15 高耐圧半導体装置

Country Status (1)

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JP (1) JP3973934B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070034941A1 (en) * 2005-08-15 2007-02-15 International Rectifier Corp. Deep N diffusion for trench IGBT
JP2007266133A (ja) * 2006-03-27 2007-10-11 Toyota Central Res & Dev Lab Inc 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
JPH0529628A (ja) * 1991-07-19 1993-02-05 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP3288218B2 (ja) * 1995-03-14 2002-06-04 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
JP3872827B2 (ja) * 1995-04-11 2007-01-24 株式会社東芝 高耐圧半導体素子
JP3738127B2 (ja) * 1998-02-26 2006-01-25 新電元工業株式会社 高耐圧半導体デバイス
JP2002016252A (ja) * 2000-06-27 2002-01-18 Toshiba Corp 絶縁ゲート型半導体素子
JP2003174164A (ja) * 2001-12-07 2003-06-20 Shindengen Electric Mfg Co Ltd 縦型ｍｏｓ半導体装置及びその製造方法

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