JPWO2023145799A5 - - Google Patents
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- JPWO2023145799A5 JPWO2023145799A5 JP2023576962A JP2023576962A JPWO2023145799A5 JP WO2023145799 A5 JPWO2023145799 A5 JP WO2023145799A5 JP 2023576962 A JP2023576962 A JP 2023576962A JP 2023576962 A JP2023576962 A JP 2023576962A JP WO2023145799 A5 JPWO2023145799 A5 JP WO2023145799A5
- Authority
- JP
- Japan
- Prior art keywords
- light
- nitride semiconductor
- manufacturing
- semiconductor substrate
- condition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022011293 | 2022-01-27 | ||
| JP2022011293 | 2022-01-27 | ||
| PCT/JP2023/002374 WO2023145799A1 (ja) | 2022-01-27 | 2023-01-26 | 半導体基板の製造方法および製造装置、並びに制御装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023145799A1 JPWO2023145799A1 (https=) | 2023-08-03 |
| JPWO2023145799A5 true JPWO2023145799A5 (https=) | 2024-10-04 |
| JP7745660B2 JP7745660B2 (ja) | 2025-09-29 |
Family
ID=87471545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023576962A Active JP7745660B2 (ja) | 2022-01-27 | 2023-01-26 | 半導体基板の製造方法、半導体基板の製造装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250118554A1 (https=) |
| EP (1) | EP4471833A4 (https=) |
| JP (1) | JP7745660B2 (https=) |
| KR (1) | KR20240119154A (https=) |
| TW (1) | TWI864562B (https=) |
| WO (1) | WO2023145799A1 (https=) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004273661A (ja) * | 2003-03-07 | 2004-09-30 | Sumitomo Chem Co Ltd | 窒化ガリウム単結晶基板の製造方法 |
| JP4571476B2 (ja) * | 2004-10-18 | 2010-10-27 | ローム株式会社 | 半導体装置の製造方法 |
| TW200703463A (en) * | 2005-05-31 | 2007-01-16 | Univ California | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
| JP4885507B2 (ja) * | 2005-10-05 | 2012-02-29 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体層の形成方法、ｉｉｉ族窒化物半導体基板の製造方法 |
| CN102160145B (zh) * | 2008-09-19 | 2013-08-21 | 台湾积体电路制造股份有限公司 | 通过外延层过成长的元件形成 |
| EP2412006A1 (en) * | 2009-02-05 | 2012-02-01 | S.O.I.Tec Silicon on Insulator Technologies | Epitaxial methods and structures for forming semiconductor materials |
| JP2013147383A (ja) * | 2012-01-19 | 2013-08-01 | Sharp Corp | 窒化物半導体ウエハおよび窒化物半導体ウエハの製造方法 |
| JP2013251304A (ja) | 2012-05-30 | 2013-12-12 | Furukawa Co Ltd | 積層体および積層体の製造方法 |
| EP2743966B1 (en) * | 2012-12-14 | 2020-11-25 | Seoul Viosys Co., Ltd. | Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same |
| JP6068323B2 (ja) * | 2013-12-05 | 2017-01-25 | 日本電信電話株式会社 | 化合物半導体の成長方法 |
| EP4053881B1 (en) * | 2019-10-29 | 2024-10-09 | Kyocera Corporation | Semiconductor element and method for producing semiconductor element |
-
2023
- 2023-01-19 TW TW112102540A patent/TWI864562B/zh active
- 2023-01-26 WO PCT/JP2023/002374 patent/WO2023145799A1/ja not_active Ceased
- 2023-01-26 JP JP2023576962A patent/JP7745660B2/ja active Active
- 2023-01-26 EP EP23747009.1A patent/EP4471833A4/en active Pending
- 2023-01-26 US US18/832,370 patent/US20250118554A1/en active Pending
- 2023-01-26 KR KR1020247024650A patent/KR20240119154A/ko active Pending
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