JPWO2023182194A5 - - Google Patents
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- Publication number
- JPWO2023182194A5 JPWO2023182194A5 JP2024510120A JP2024510120A JPWO2023182194A5 JP WO2023182194 A5 JPWO2023182194 A5 JP WO2023182194A5 JP 2024510120 A JP2024510120 A JP 2024510120A JP 2024510120 A JP2024510120 A JP 2024510120A JP WO2023182194 A5 JPWO2023182194 A5 JP WO2023182194A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- light
- manufacturing
- growth
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 73
- 239000000758 substrate Substances 0.000 claims 48
- 150000004767 nitrides Chemical class 0.000 claims 43
- 238000004519 manufacturing process Methods 0.000 claims 23
- 238000000034 method Methods 0.000 claims 22
- 230000009036 growth inhibition Effects 0.000 claims 11
- 239000002994 raw material Substances 0.000 claims 8
- 230000003287 optical effect Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022048788 | 2022-03-24 | ||
| PCT/JP2023/010518 WO2023182194A1 (ja) | 2022-03-24 | 2023-03-17 | 半導体基板の製造方法および製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023182194A1 JPWO2023182194A1 (https=) | 2023-09-28 |
| JPWO2023182194A5 true JPWO2023182194A5 (https=) | 2024-11-28 |
Family
ID=88100807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024510120A Pending JPWO2023182194A1 (https=) | 2022-03-24 | 2023-03-17 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2023182194A1 (https=) |
| KR (1) | KR20240160132A (https=) |
| DE (1) | DE112023001542T5 (https=) |
| TW (1) | TWI899553B (https=) |
| WO (1) | WO2023182194A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4638958B1 (ja) * | 2009-08-20 | 2011-02-23 | 株式会社パウデック | 半導体素子の製造方法 |
| WO2012102970A1 (en) * | 2011-01-24 | 2012-08-02 | Applied Materials, Inc. | Growth of iii-v led stacks using nano masks |
| JP2013251304A (ja) | 2012-05-30 | 2013-12-12 | Furukawa Co Ltd | 積層体および積層体の製造方法 |
| DE102015107661B4 (de) * | 2015-05-15 | 2021-03-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Nitridverbindungshalbleiter-Bauelements |
-
2023
- 2023-03-17 DE DE112023001542.2T patent/DE112023001542T5/de active Pending
- 2023-03-17 KR KR1020247031997A patent/KR20240160132A/ko active Pending
- 2023-03-17 JP JP2024510120A patent/JPWO2023182194A1/ja active Pending
- 2023-03-17 WO PCT/JP2023/010518 patent/WO2023182194A1/ja not_active Ceased
- 2023-03-21 TW TW112110412A patent/TWI899553B/zh active
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