JPWO2023090264A5 - - Google Patents

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Publication number
JPWO2023090264A5
JPWO2023090264A5 JP2023561568A JP2023561568A JPWO2023090264A5 JP WO2023090264 A5 JPWO2023090264 A5 JP WO2023090264A5 JP 2023561568 A JP2023561568 A JP 2023561568A JP 2023561568 A JP2023561568 A JP 2023561568A JP WO2023090264 A5 JPWO2023090264 A5 JP WO2023090264A5
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JP
Japan
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electrode layer
layer
insulating layer
active matrix
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JP2023561568A
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English (en)
Japanese (ja)
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JPWO2023090264A1 (https=
JP7723758B2 (ja
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Priority claimed from PCT/JP2022/042039 external-priority patent/WO2023090264A1/ja
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Publication of JPWO2023090264A5 publication Critical patent/JPWO2023090264A5/ja
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JP2023561568A 2021-11-22 2022-11-11 アクティブマトリクス基板および液晶表示装置 Active JP7723758B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021189606 2021-11-22
JP2021189606 2021-11-22
PCT/JP2022/042039 WO2023090264A1 (ja) 2021-11-22 2022-11-11 アクティブマトリクス基板および液晶表示装置

Publications (3)

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JPWO2023090264A1 JPWO2023090264A1 (https=) 2023-05-25
JPWO2023090264A5 true JPWO2023090264A5 (https=) 2024-08-06
JP7723758B2 JP7723758B2 (ja) 2025-08-14

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JP2023561568A Active JP7723758B2 (ja) 2021-11-22 2022-11-11 アクティブマトリクス基板および液晶表示装置

Country Status (4)

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US (1) US12332529B2 (https=)
JP (1) JP7723758B2 (https=)
CN (1) CN118284984A (https=)
WO (1) WO2023090264A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121613654A (zh) * 2024-08-27 2026-03-06 合肥鑫晟光电科技有限公司 一种阵列基板、显示面板及显示装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1138440A (ja) 1997-07-17 1999-02-12 Sharp Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2000058848A (ja) 1998-07-31 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
CN103339715B (zh) 2010-12-03 2016-01-13 株式会社半导体能源研究所 氧化物半导体膜以及半导体装置
JP2012242439A (ja) 2011-05-16 2012-12-10 Dainippon Printing Co Ltd アクティブマトリックス基板及びアクティブマトリックス基板の製造方法、液晶表示装置
KR102071545B1 (ko) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102708594B1 (ko) 2016-09-07 2024-09-23 삼성디스플레이 주식회사 표시 장치
JP2018170326A (ja) 2017-03-29 2018-11-01 株式会社ジャパンディスプレイ 表示装置
JP6563991B2 (ja) 2017-09-05 2019-08-21 株式会社半導体エネルギー研究所 透過型液晶表示装置
JP6991865B2 (ja) 2018-01-19 2022-01-13 株式会社ジャパンディスプレイ Tft基板
JP7019459B2 (ja) 2018-03-02 2022-02-15 株式会社ジャパンディスプレイ 表示装置
JP7370375B2 (ja) 2019-03-11 2023-10-27 株式会社ジャパンディスプレイ 表示装置及び半導体装置
US11215891B2 (en) 2019-05-24 2022-01-04 Sharp Kabushiki Kaisha Active matrix substrate and manufacturing method thereof

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