JPWO2023063352A5 - - Google Patents
Info
- Publication number
- JPWO2023063352A5 JPWO2023063352A5 JP2023554577A JP2023554577A JPWO2023063352A5 JP WO2023063352 A5 JPWO2023063352 A5 JP WO2023063352A5 JP 2023554577 A JP2023554577 A JP 2023554577A JP 2023554577 A JP2023554577 A JP 2023554577A JP WO2023063352 A5 JPWO2023063352 A5 JP WO2023063352A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide thin
- crystalline oxide
- crystalline
- fourier transform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021169157 | 2021-10-14 | ||
| JP2022053861 | 2022-03-29 | ||
| PCT/JP2022/038044 WO2023063352A1 (ja) | 2021-10-14 | 2022-10-12 | 結晶酸化物薄膜及びその製造方法、並びに薄膜トランジスタ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023063352A1 JPWO2023063352A1 (cg-RX-API-DMAC7.html) | 2023-04-20 |
| JPWO2023063352A5 true JPWO2023063352A5 (cg-RX-API-DMAC7.html) | 2025-07-23 |
Family
ID=85988661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023554577A Pending JPWO2023063352A1 (cg-RX-API-DMAC7.html) | 2021-10-14 | 2022-10-12 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250151354A1 (cg-RX-API-DMAC7.html) |
| EP (1) | EP4418309A4 (cg-RX-API-DMAC7.html) |
| JP (1) | JPWO2023063352A1 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20240074786A (cg-RX-API-DMAC7.html) |
| TW (1) | TW202332043A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2023063352A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026154307A1 (ja) * | 2025-01-15 | 2026-07-23 | 株式会社半導体エネルギー研究所 | 金属酸化物層の形成方法、金属酸化物層、半導体装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491258U (cg-RX-API-DMAC7.html) | 1977-12-09 | 1979-06-28 | ||
| JPH09282945A (ja) * | 1996-04-16 | 1997-10-31 | Idemitsu Kosan Co Ltd | 透明導電膜およびその製造方法 |
| JP5491258B2 (ja) | 2010-04-02 | 2014-05-14 | 出光興産株式会社 | 酸化物半導体の成膜方法 |
| JP2013201211A (ja) * | 2012-03-23 | 2013-10-03 | Sony Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器 |
| JP6853421B2 (ja) | 2019-03-28 | 2021-03-31 | 出光興産株式会社 | 結晶酸化物薄膜、積層体及び薄膜トランジスタ |
| KR102436433B1 (ko) * | 2019-08-28 | 2022-08-25 | 한양대학교 산학협력단 | 빅스비아이트 결정을 함유하는 금속 산화물 채널층을 구비하는 박막트랜지스터 및 수직형 비휘발성 메모리 소자 |
-
2022
- 2022-10-12 KR KR1020247011836A patent/KR20240074786A/ko active Pending
- 2022-10-12 US US18/700,706 patent/US20250151354A1/en active Pending
- 2022-10-12 WO PCT/JP2022/038044 patent/WO2023063352A1/ja not_active Ceased
- 2022-10-12 JP JP2023554577A patent/JPWO2023063352A1/ja active Pending
- 2022-10-12 EP EP22881047.9A patent/EP4418309A4/en active Pending
- 2022-10-14 TW TW111139023A patent/TW202332043A/zh unknown
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