JPWO2023002865A5 - - Google Patents
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- Publication number
- JPWO2023002865A5 JPWO2023002865A5 JP2023536693A JP2023536693A JPWO2023002865A5 JP WO2023002865 A5 JPWO2023002865 A5 JP WO2023002865A5 JP 2023536693 A JP2023536693 A JP 2023536693A JP 2023536693 A JP2023536693 A JP 2023536693A JP WO2023002865 A5 JPWO2023002865 A5 JP WO2023002865A5
- Authority
- JP
- Japan
- Prior art keywords
- template substrate
- semiconductor
- substrate according
- template
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 claims 46
- 239000004065 semiconductor Substances 0.000 claims 17
- 230000001681 protective effect Effects 0.000 claims 14
- 238000000034 method Methods 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021120981 | 2021-07-21 | ||
| PCT/JP2022/027064 WO2023002865A1 (ja) | 2021-07-21 | 2022-07-08 | テンプレート基板並びにその製造方法および製造装置、半導体基板並びにその製造方法および製造装置、半導体デバイス、電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023002865A1 JPWO2023002865A1 (https=) | 2023-01-26 |
| JPWO2023002865A5 true JPWO2023002865A5 (https=) | 2024-04-12 |
Family
ID=84979204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023536693A Pending JPWO2023002865A1 (https=) | 2021-07-21 | 2022-07-08 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250093766A1 (https=) |
| JP (1) | JPWO2023002865A1 (https=) |
| CN (1) | CN117769613A (https=) |
| TW (1) | TWI845987B (https=) |
| WO (1) | WO2023002865A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007246289A (ja) * | 2004-03-11 | 2007-09-27 | Nec Corp | 窒化ガリウム系半導体基板の作製方法 |
| JP2009256154A (ja) * | 2008-04-21 | 2009-11-05 | Nippon Telegr & Teleph Corp <Ntt> | 半導体結晶成長用基板および半導体結晶 |
| JP5681937B2 (ja) * | 2010-11-25 | 2015-03-11 | 株式会社パウデック | 半導体素子およびその製造方法 |
| CN103388178B (zh) * | 2013-08-07 | 2016-12-28 | 厦门市三安光电科技有限公司 | Iii族氮化物外延结构及其生长方法 |
| JP6185398B2 (ja) * | 2014-01-31 | 2017-08-23 | 東京エレクトロン株式会社 | 窒化ガリウム系結晶の成長方法及び熱処理装置 |
| JP6553765B1 (ja) * | 2018-03-20 | 2019-07-31 | 株式会社サイオクス | 結晶基板の製造方法および結晶基板 |
| EP4053881B1 (en) * | 2019-10-29 | 2024-10-09 | Kyocera Corporation | Semiconductor element and method for producing semiconductor element |
-
2022
- 2022-07-08 CN CN202280050905.2A patent/CN117769613A/zh active Pending
- 2022-07-08 WO PCT/JP2022/027064 patent/WO2023002865A1/ja not_active Ceased
- 2022-07-08 US US18/580,803 patent/US20250093766A1/en active Pending
- 2022-07-08 JP JP2023536693A patent/JPWO2023002865A1/ja active Pending
- 2022-07-18 TW TW111126867A patent/TWI845987B/zh active
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