JPWO2022249731A1 - - Google Patents
Info
- Publication number
- JPWO2022249731A1 JPWO2022249731A1 JP2023524052A JP2023524052A JPWO2022249731A1 JP WO2022249731 A1 JPWO2022249731 A1 JP WO2022249731A1 JP 2023524052 A JP2023524052 A JP 2023524052A JP 2023524052 A JP2023524052 A JP 2023524052A JP WO2022249731 A1 JPWO2022249731 A1 JP WO2022249731A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
- H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021087988 | 2021-05-25 | ||
| PCT/JP2022/015276 WO2022249731A1 (ja) | 2021-05-25 | 2022-03-29 | 撮像装置及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249731A1 true JPWO2022249731A1 (https=) | 2022-12-01 |
Family
ID=84228757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023524052A Pending JPWO2022249731A1 (https=) | 2021-05-25 | 2022-03-29 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240187759A1 (https=) |
| EP (1) | EP4351127A4 (https=) |
| JP (1) | JPWO2022249731A1 (https=) |
| KR (1) | KR20240011679A (https=) |
| CN (1) | CN117337579A (https=) |
| TW (1) | TW202247639A (https=) |
| WO (1) | WO2022249731A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019216379A (ja) * | 2018-06-14 | 2019-12-19 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、撮像装置、および、固体撮像素子の制御方法 |
| WO2020045122A1 (ja) * | 2018-08-31 | 2020-03-05 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその駆動方法、並びに電子機器 |
| JP2020096225A (ja) * | 2018-12-10 | 2020-06-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5458869B2 (ja) * | 2009-12-21 | 2014-04-02 | ソニー株式会社 | 固体撮像装置およびその駆動方法、カメラ |
| US20150287766A1 (en) * | 2014-04-02 | 2015-10-08 | Tae-Chan Kim | Unit pixel of an image sensor and image sensor including the same |
| KR102549621B1 (ko) * | 2016-09-02 | 2023-06-28 | 삼성전자주식회사 | 반도체 장치 |
| JP2018148528A (ja) | 2017-03-09 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| JP7080660B2 (ja) * | 2018-02-09 | 2022-06-06 | キヤノン株式会社 | 光電変換装置、撮像システム、および、移動体 |
-
2022
- 2022-03-29 JP JP2023524052A patent/JPWO2022249731A1/ja active Pending
- 2022-03-29 US US18/553,809 patent/US20240187759A1/en active Pending
- 2022-03-29 WO PCT/JP2022/015276 patent/WO2022249731A1/ja not_active Ceased
- 2022-03-29 CN CN202280036189.2A patent/CN117337579A/zh active Pending
- 2022-03-29 KR KR1020237037998A patent/KR20240011679A/ko active Pending
- 2022-03-29 EP EP22811006.0A patent/EP4351127A4/en active Pending
- 2022-04-29 TW TW111116368A patent/TW202247639A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019216379A (ja) * | 2018-06-14 | 2019-12-19 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、撮像装置、および、固体撮像素子の制御方法 |
| WO2020045122A1 (ja) * | 2018-08-31 | 2020-03-05 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその駆動方法、並びに電子機器 |
| JP2020096225A (ja) * | 2018-12-10 | 2020-06-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240187759A1 (en) | 2024-06-06 |
| KR20240011679A (ko) | 2024-01-26 |
| TW202247639A (zh) | 2022-12-01 |
| WO2022249731A1 (ja) | 2022-12-01 |
| EP4351127A4 (en) | 2025-06-25 |
| EP4351127A1 (en) | 2024-04-10 |
| CN117337579A (zh) | 2024-01-02 |
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