JPWO2022249596A5 - - Google Patents

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Publication number
JPWO2022249596A5
JPWO2022249596A5 JP2023523998A JP2023523998A JPWO2022249596A5 JP WO2022249596 A5 JPWO2022249596 A5 JP WO2022249596A5 JP 2023523998 A JP2023523998 A JP 2023523998A JP 2023523998 A JP2023523998 A JP 2023523998A JP WO2022249596 A5 JPWO2022249596 A5 JP WO2022249596A5
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JP
Japan
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wiring
diagram illustrating
sectional
present disclosure
modification
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JP2023523998A
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English (en)
Japanese (ja)
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JPWO2022249596A1 (https=
JP7756713B2 (ja
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Priority claimed from PCT/JP2022/007407 external-priority patent/WO2022249596A1/ja
Publication of JPWO2022249596A1 publication Critical patent/JPWO2022249596A1/ja
Publication of JPWO2022249596A5 publication Critical patent/JPWO2022249596A5/ja
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Publication of JP7756713B2 publication Critical patent/JP7756713B2/ja
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JP2023523998A 2021-05-26 2022-02-22 撮像素子および撮像素子の製造方法 Active JP7756713B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021088786 2021-05-26
JP2021088786 2021-05-26
PCT/JP2022/007407 WO2022249596A1 (ja) 2021-05-26 2022-02-22 撮像素子および撮像素子の製造方法

Publications (3)

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JPWO2022249596A1 JPWO2022249596A1 (https=) 2022-12-01
JPWO2022249596A5 true JPWO2022249596A5 (https=) 2025-02-04
JP7756713B2 JP7756713B2 (ja) 2025-10-20

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JP2023523998A Active JP7756713B2 (ja) 2021-05-26 2022-02-22 撮像素子および撮像素子の製造方法

Country Status (4)

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US (1) US20240243155A1 (https=)
JP (1) JP7756713B2 (https=)
CN (1) CN117242574A (https=)
WO (1) WO2022249596A1 (https=)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265321B1 (en) * 2000-04-17 2001-07-24 Chartered Semiconductor Manufacturing Ltd. Air bridge process for forming air gaps
US6917109B2 (en) * 2002-11-15 2005-07-12 United Micorelectronics, Corp. Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device
JP5204370B2 (ja) * 2005-03-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20090093100A1 (en) * 2007-10-09 2009-04-09 Li-Qun Xia Method for forming an air gap in multilevel interconnect structure
KR20130092884A (ko) * 2012-02-13 2013-08-21 에스케이하이닉스 주식회사 반도체 소자의 배선 구조체 및 제조 방법
KR102146705B1 (ko) * 2013-12-23 2020-08-21 삼성전자주식회사 반도체 소자의 배선 구조물 및 그 형성 방법
KR102092863B1 (ko) * 2013-12-30 2020-03-24 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US9607882B2 (en) * 2015-08-31 2017-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9881870B2 (en) * 2015-12-30 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9653348B1 (en) * 2015-12-30 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9905456B1 (en) * 2016-09-26 2018-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE112018006764T5 (de) * 2018-01-05 2020-09-10 Sony Semiconductor Solutions Corporation Halbleitervorrichtung
WO2020004011A1 (ja) 2018-06-29 2020-01-02 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
US12501733B2 (en) * 2019-03-07 2025-12-16 Sony Semiconductor Solutions Corporation Semiconductor device and imaging unit
TWI872085B (zh) * 2019-06-26 2025-02-11 日商索尼半導體解決方案公司 攝像裝置

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