JPWO2022249596A1 - - Google Patents
Info
- Publication number
- JPWO2022249596A1 JPWO2022249596A1 JP2023523998A JP2023523998A JPWO2022249596A1 JP WO2022249596 A1 JPWO2022249596 A1 JP WO2022249596A1 JP 2023523998 A JP2023523998 A JP 2023523998A JP 2023523998 A JP2023523998 A JP 2023523998A JP WO2022249596 A1 JPWO2022249596 A1 JP WO2022249596A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
- H10W20/48—Insulating materials thereof
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021088786 | 2021-05-26 | ||
| JP2021088786 | 2021-05-26 | ||
| PCT/JP2022/007407 WO2022249596A1 (ja) | 2021-05-26 | 2022-02-22 | 撮像素子および撮像素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249596A1 true JPWO2022249596A1 (https=) | 2022-12-01 |
| JPWO2022249596A5 JPWO2022249596A5 (https=) | 2025-02-04 |
| JP7756713B2 JP7756713B2 (ja) | 2025-10-20 |
Family
ID=84229843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023523998A Active JP7756713B2 (ja) | 2021-05-26 | 2022-02-22 | 撮像素子および撮像素子の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240243155A1 (https=) |
| JP (1) | JP7756713B2 (https=) |
| CN (1) | CN117242574A (https=) |
| WO (1) | WO2022249596A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170062265A1 (en) * | 2015-08-31 | 2017-03-02 | Taiwan Semiconductor Manufacturing Company | Semiconductor device and manufacturing method thereof |
| WO2020004011A1 (ja) * | 2018-06-29 | 2020-01-02 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2020179494A1 (ja) * | 2019-03-07 | 2020-09-10 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および撮像装置 |
| WO2020262320A1 (ja) * | 2019-06-26 | 2020-12-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6265321B1 (en) * | 2000-04-17 | 2001-07-24 | Chartered Semiconductor Manufacturing Ltd. | Air bridge process for forming air gaps |
| US6917109B2 (en) * | 2002-11-15 | 2005-07-12 | United Micorelectronics, Corp. | Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device |
| JP5204370B2 (ja) * | 2005-03-17 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US20090093100A1 (en) * | 2007-10-09 | 2009-04-09 | Li-Qun Xia | Method for forming an air gap in multilevel interconnect structure |
| KR20130092884A (ko) * | 2012-02-13 | 2013-08-21 | 에스케이하이닉스 주식회사 | 반도체 소자의 배선 구조체 및 제조 방법 |
| KR102146705B1 (ko) * | 2013-12-23 | 2020-08-21 | 삼성전자주식회사 | 반도체 소자의 배선 구조물 및 그 형성 방법 |
| KR102092863B1 (ko) * | 2013-12-30 | 2020-03-24 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
| US9881870B2 (en) * | 2015-12-30 | 2018-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9653348B1 (en) * | 2015-12-30 | 2017-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9905456B1 (en) * | 2016-09-26 | 2018-02-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| DE112018006764T5 (de) * | 2018-01-05 | 2020-09-10 | Sony Semiconductor Solutions Corporation | Halbleitervorrichtung |
-
2022
- 2022-02-22 JP JP2023523998A patent/JP7756713B2/ja active Active
- 2022-02-22 WO PCT/JP2022/007407 patent/WO2022249596A1/ja not_active Ceased
- 2022-02-22 US US18/559,444 patent/US20240243155A1/en active Pending
- 2022-02-22 CN CN202280030320.4A patent/CN117242574A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170062265A1 (en) * | 2015-08-31 | 2017-03-02 | Taiwan Semiconductor Manufacturing Company | Semiconductor device and manufacturing method thereof |
| WO2020004011A1 (ja) * | 2018-06-29 | 2020-01-02 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2020179494A1 (ja) * | 2019-03-07 | 2020-09-10 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および撮像装置 |
| WO2020262320A1 (ja) * | 2019-06-26 | 2020-12-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117242574A (zh) | 2023-12-15 |
| JP7756713B2 (ja) | 2025-10-20 |
| US20240243155A1 (en) | 2024-07-18 |
| WO2022249596A1 (ja) | 2022-12-01 |
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