CN117242574A - 成像元件和成像元件的制造方法 - Google Patents

成像元件和成像元件的制造方法 Download PDF

Info

Publication number
CN117242574A
CN117242574A CN202280030320.4A CN202280030320A CN117242574A CN 117242574 A CN117242574 A CN 117242574A CN 202280030320 A CN202280030320 A CN 202280030320A CN 117242574 A CN117242574 A CN 117242574A
Authority
CN
China
Prior art keywords
wiring
imaging element
insulating film
wirings
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280030320.4A
Other languages
English (en)
Chinese (zh)
Inventor
三桥生枝
羽根田雅希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN117242574A publication Critical patent/CN117242574A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280030320.4A 2021-05-26 2022-02-22 成像元件和成像元件的制造方法 Pending CN117242574A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021088786 2021-05-26
JP2021-088786 2021-05-26
PCT/JP2022/007407 WO2022249596A1 (ja) 2021-05-26 2022-02-22 撮像素子および撮像素子の製造方法

Publications (1)

Publication Number Publication Date
CN117242574A true CN117242574A (zh) 2023-12-15

Family

ID=84229843

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280030320.4A Pending CN117242574A (zh) 2021-05-26 2022-02-22 成像元件和成像元件的制造方法

Country Status (4)

Country Link
US (1) US20240243155A1 (https=)
JP (1) JP7756713B2 (https=)
CN (1) CN117242574A (https=)
WO (1) WO2022249596A1 (https=)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265321B1 (en) * 2000-04-17 2001-07-24 Chartered Semiconductor Manufacturing Ltd. Air bridge process for forming air gaps
US6917109B2 (en) * 2002-11-15 2005-07-12 United Micorelectronics, Corp. Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device
JP5204370B2 (ja) * 2005-03-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20090093100A1 (en) * 2007-10-09 2009-04-09 Li-Qun Xia Method for forming an air gap in multilevel interconnect structure
KR20130092884A (ko) * 2012-02-13 2013-08-21 에스케이하이닉스 주식회사 반도체 소자의 배선 구조체 및 제조 방법
KR102146705B1 (ko) * 2013-12-23 2020-08-21 삼성전자주식회사 반도체 소자의 배선 구조물 및 그 형성 방법
KR102092863B1 (ko) * 2013-12-30 2020-03-24 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US9607882B2 (en) * 2015-08-31 2017-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9881870B2 (en) * 2015-12-30 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9653348B1 (en) * 2015-12-30 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9905456B1 (en) * 2016-09-26 2018-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE112018006764T5 (de) * 2018-01-05 2020-09-10 Sony Semiconductor Solutions Corporation Halbleitervorrichtung
WO2020004011A1 (ja) 2018-06-29 2020-01-02 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
US12501733B2 (en) * 2019-03-07 2025-12-16 Sony Semiconductor Solutions Corporation Semiconductor device and imaging unit
TWI872085B (zh) * 2019-06-26 2025-02-11 日商索尼半導體解決方案公司 攝像裝置

Also Published As

Publication number Publication date
JPWO2022249596A1 (https=) 2022-12-01
JP7756713B2 (ja) 2025-10-20
US20240243155A1 (en) 2024-07-18
WO2022249596A1 (ja) 2022-12-01

Similar Documents

Publication Publication Date Title
US20250040287A1 (en) Image sensor and electronic apparatus
JP7541971B2 (ja) 撮像装置
CN118173567A (zh) 光检测装置
CN114946029B (zh) 摄像元件和摄像元件的制造方法
US20240250106A1 (en) Image sensor
US12501733B2 (en) Semiconductor device and imaging unit
US20250072150A1 (en) Imaging element and method of manufacturing imaging element
US12514017B2 (en) Wiring structure, method of manufacturing the same, and imaging device
US20230275020A1 (en) Wiring structure, method of manufacturing the same, and imaging device
JP7756713B2 (ja) 撮像素子および撮像素子の製造方法
JP7664250B2 (ja) 撮像素子
US12615872B2 (en) Image sensor and electronic apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination