JP7756713B2 - 撮像素子および撮像素子の製造方法 - Google Patents

撮像素子および撮像素子の製造方法

Info

Publication number
JP7756713B2
JP7756713B2 JP2023523998A JP2023523998A JP7756713B2 JP 7756713 B2 JP7756713 B2 JP 7756713B2 JP 2023523998 A JP2023523998 A JP 2023523998A JP 2023523998 A JP2023523998 A JP 2023523998A JP 7756713 B2 JP7756713 B2 JP 7756713B2
Authority
JP
Japan
Prior art keywords
insulating film
wiring
film
wirings
barrier film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023523998A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022249596A1 (https=
JPWO2022249596A5 (https=
Inventor
生枝 三橋
雅希 羽根田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of JPWO2022249596A1 publication Critical patent/JPWO2022249596A1/ja
Publication of JPWO2022249596A5 publication Critical patent/JPWO2022249596A5/ja
Application granted granted Critical
Publication of JP7756713B2 publication Critical patent/JP7756713B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023523998A 2021-05-26 2022-02-22 撮像素子および撮像素子の製造方法 Active JP7756713B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021088786 2021-05-26
JP2021088786 2021-05-26
PCT/JP2022/007407 WO2022249596A1 (ja) 2021-05-26 2022-02-22 撮像素子および撮像素子の製造方法

Publications (3)

Publication Number Publication Date
JPWO2022249596A1 JPWO2022249596A1 (https=) 2022-12-01
JPWO2022249596A5 JPWO2022249596A5 (https=) 2025-02-04
JP7756713B2 true JP7756713B2 (ja) 2025-10-20

Family

ID=84229843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523998A Active JP7756713B2 (ja) 2021-05-26 2022-02-22 撮像素子および撮像素子の製造方法

Country Status (4)

Country Link
US (1) US20240243155A1 (https=)
JP (1) JP7756713B2 (https=)
CN (1) CN117242574A (https=)
WO (1) WO2022249596A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170062265A1 (en) 2015-08-31 2017-03-02 Taiwan Semiconductor Manufacturing Company Semiconductor device and manufacturing method thereof
WO2020004011A1 (ja) 2018-06-29 2020-01-02 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
WO2020179494A1 (ja) 2019-03-07 2020-09-10 ソニーセミコンダクタソリューションズ株式会社 半導体装置および撮像装置
WO2020262320A1 (ja) 2019-06-26 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265321B1 (en) * 2000-04-17 2001-07-24 Chartered Semiconductor Manufacturing Ltd. Air bridge process for forming air gaps
US6917109B2 (en) * 2002-11-15 2005-07-12 United Micorelectronics, Corp. Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device
JP5204370B2 (ja) * 2005-03-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20090093100A1 (en) * 2007-10-09 2009-04-09 Li-Qun Xia Method for forming an air gap in multilevel interconnect structure
KR20130092884A (ko) * 2012-02-13 2013-08-21 에스케이하이닉스 주식회사 반도체 소자의 배선 구조체 및 제조 방법
KR102146705B1 (ko) * 2013-12-23 2020-08-21 삼성전자주식회사 반도체 소자의 배선 구조물 및 그 형성 방법
KR102092863B1 (ko) * 2013-12-30 2020-03-24 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US9881870B2 (en) * 2015-12-30 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9653348B1 (en) * 2015-12-30 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9905456B1 (en) * 2016-09-26 2018-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE112018006764T5 (de) * 2018-01-05 2020-09-10 Sony Semiconductor Solutions Corporation Halbleitervorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170062265A1 (en) 2015-08-31 2017-03-02 Taiwan Semiconductor Manufacturing Company Semiconductor device and manufacturing method thereof
WO2020004011A1 (ja) 2018-06-29 2020-01-02 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
WO2020179494A1 (ja) 2019-03-07 2020-09-10 ソニーセミコンダクタソリューションズ株式会社 半導体装置および撮像装置
WO2020262320A1 (ja) 2019-06-26 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Also Published As

Publication number Publication date
CN117242574A (zh) 2023-12-15
JPWO2022249596A1 (https=) 2022-12-01
US20240243155A1 (en) 2024-07-18
WO2022249596A1 (ja) 2022-12-01

Similar Documents

Publication Publication Date Title
JP7732022B2 (ja) 撮像素子および電子機器
JP7541971B2 (ja) 撮像装置
JP7603382B2 (ja) 撮像素子および撮像素子の製造方法
US20240250106A1 (en) Image sensor
US12501733B2 (en) Semiconductor device and imaging unit
US20250072150A1 (en) Imaging element and method of manufacturing imaging element
JP7756713B2 (ja) 撮像素子および撮像素子の製造方法
US20230275020A1 (en) Wiring structure, method of manufacturing the same, and imaging device
US20230268369A1 (en) Wiring structure, method of manufacturing the same, and imaging device
JP7664250B2 (ja) 撮像素子
US12615872B2 (en) Image sensor and electronic apparatus

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250909

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251007

R150 Certificate of patent or registration of utility model

Ref document number: 7756713

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150