JPWO2022244575A5 - - Google Patents

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Publication number
JPWO2022244575A5
JPWO2022244575A5 JP2023522339A JP2023522339A JPWO2022244575A5 JP WO2022244575 A5 JPWO2022244575 A5 JP WO2022244575A5 JP 2023522339 A JP2023522339 A JP 2023522339A JP 2023522339 A JP2023522339 A JP 2023522339A JP WO2022244575 A5 JPWO2022244575 A5 JP WO2022244575A5
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JP
Japan
Prior art keywords
photoelectric conversion
electrode
quantum dots
quantum dot
layer
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Pending
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JP2023522339A
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English (en)
Japanese (ja)
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JPWO2022244575A1 (https=
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Priority claimed from PCT/JP2022/018142 external-priority patent/WO2022244575A1/ja
Publication of JPWO2022244575A1 publication Critical patent/JPWO2022244575A1/ja
Publication of JPWO2022244575A5 publication Critical patent/JPWO2022244575A5/ja
Pending legal-status Critical Current

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JP2023522339A 2021-05-21 2022-04-19 Pending JPWO2022244575A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021086045 2021-05-21
PCT/JP2022/018142 WO2022244575A1 (ja) 2021-05-21 2022-04-19 光電変換素子および撮像装置

Publications (2)

Publication Number Publication Date
JPWO2022244575A1 JPWO2022244575A1 (https=) 2022-11-24
JPWO2022244575A5 true JPWO2022244575A5 (https=) 2024-02-22

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ID=84141353

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JP2023522339A Pending JPWO2022244575A1 (https=) 2021-05-21 2022-04-19

Country Status (5)

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US (1) US20240049490A1 (https=)
EP (1) EP4343858A4 (https=)
JP (1) JPWO2022244575A1 (https=)
CN (1) CN117321781A (https=)
WO (1) WO2022244575A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240081086A1 (en) * 2020-12-22 2024-03-07 Sharp Kabushiki Kaisha Ligh-emitting element and light-emitting device
WO2024176881A1 (ja) * 2023-02-22 2024-08-29 富士フイルム株式会社 半導体膜、光検出素子、イメージセンサ、分散液および半導体膜の製造方法
WO2024176882A1 (ja) * 2023-02-22 2024-08-29 富士フイルム株式会社 光検出素子およびイメージセンサ
KR20250008602A (ko) * 2023-07-06 2025-01-15 삼성디스플레이 주식회사 양자점 복합체, 양자점 복합체를 포함하는 발광 소자, 및 양자점 복합체를 포함하는 표시 장치
WO2025047466A1 (ja) * 2023-08-30 2025-03-06 富士フイルム株式会社 半導体膜、光検出素子およびイメージセンサ
TW202541655A (zh) * 2023-09-29 2025-10-16 美商艾德亞半導體接合科技有限公司 堆疊式量子點感測器及其形成方法
WO2025120799A1 (ja) * 2023-12-07 2025-06-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
RU2013139232A (ru) 2011-02-28 2015-04-10 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Устройства преобразования с повышением частоты, содержащие широкополосный поглотитель
KR20120133700A (ko) * 2011-05-31 2012-12-11 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US9030189B2 (en) * 2011-08-28 2015-05-12 Edward Hartley Sargent Quantum dot photo-field-effect transistor
WO2015056750A1 (ja) * 2013-10-17 2015-04-23 株式会社村田製作所 ナノ粒子材料、及び発光デバイス
US20160276507A1 (en) 2013-11-19 2016-09-22 Kyocera Corporation Photoelectric conversion layer and photoelectric conversion device
CA2948486A1 (en) * 2014-05-09 2015-11-12 Massachusetts Institute Of Technology Energy level modification of nanocrystals through ligand exchange
WO2016017763A1 (ja) * 2014-07-30 2016-02-04 京セラ株式会社 量子ドット太陽電池
JP2016162886A (ja) * 2015-03-02 2016-09-05 京セラ株式会社 光電変換装置
WO2017006520A1 (ja) * 2015-07-08 2017-01-12 パナソニックIpマネジメント株式会社 撮像装置
JP6298223B2 (ja) 2015-08-28 2018-03-20 京セラ株式会社 光電変換装置
US10897023B2 (en) * 2015-10-02 2021-01-19 Toyota Motor Europe All quantum dot based optoelectronic device
EP3544074B1 (en) * 2018-03-19 2025-06-04 Samsung Electronics Co., Ltd. Electroluminescent device, and display device comprising thereof
JP7527774B2 (ja) * 2019-03-11 2024-08-05 キヤノン株式会社 量子ドット、それを有する光電変換素子、受光素子、光電変換装置、移動体、量子ドットの製造方法、光電変換素子の製造方法
KR102718280B1 (ko) * 2019-09-20 2024-10-15 삼성전자주식회사 전계 발광 소자 및 이를 포함하는 표시 장치
JP7391600B2 (ja) * 2019-10-11 2023-12-05 キヤノン株式会社 光電変換素子

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