JPWO2022244575A1 - - Google Patents
Info
- Publication number
- JPWO2022244575A1 JPWO2022244575A1 JP2023522339A JP2023522339A JPWO2022244575A1 JP WO2022244575 A1 JPWO2022244575 A1 JP WO2022244575A1 JP 2023522339 A JP2023522339 A JP 2023522339A JP 2023522339 A JP2023522339 A JP 2023522339A JP WO2022244575 A1 JPWO2022244575 A1 JP WO2022244575A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021086045 | 2021-05-21 | ||
| PCT/JP2022/018142 WO2022244575A1 (ja) | 2021-05-21 | 2022-04-19 | 光電変換素子および撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022244575A1 true JPWO2022244575A1 (https=) | 2022-11-24 |
| JPWO2022244575A5 JPWO2022244575A5 (https=) | 2024-02-22 |
Family
ID=84141353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023522339A Pending JPWO2022244575A1 (https=) | 2021-05-21 | 2022-04-19 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240049490A1 (https=) |
| EP (1) | EP4343858A4 (https=) |
| JP (1) | JPWO2022244575A1 (https=) |
| CN (1) | CN117321781A (https=) |
| WO (1) | WO2022244575A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240081086A1 (en) * | 2020-12-22 | 2024-03-07 | Sharp Kabushiki Kaisha | Ligh-emitting element and light-emitting device |
| WO2024176881A1 (ja) * | 2023-02-22 | 2024-08-29 | 富士フイルム株式会社 | 半導体膜、光検出素子、イメージセンサ、分散液および半導体膜の製造方法 |
| WO2024176882A1 (ja) * | 2023-02-22 | 2024-08-29 | 富士フイルム株式会社 | 光検出素子およびイメージセンサ |
| KR20250008602A (ko) * | 2023-07-06 | 2025-01-15 | 삼성디스플레이 주식회사 | 양자점 복합체, 양자점 복합체를 포함하는 발광 소자, 및 양자점 복합체를 포함하는 표시 장치 |
| WO2025047466A1 (ja) * | 2023-08-30 | 2025-03-06 | 富士フイルム株式会社 | 半導体膜、光検出素子およびイメージセンサ |
| TW202541655A (zh) * | 2023-09-29 | 2025-10-16 | 美商艾德亞半導體接合科技有限公司 | 堆疊式量子點感測器及其形成方法 |
| WO2025120799A1 (ja) * | 2023-12-07 | 2025-06-12 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および電子機器 |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090255580A1 (en) * | 2008-03-24 | 2009-10-15 | Neil Dasgupta | Quantum dot solar cell with quantum dot bandgap gradients |
| KR20120133700A (ko) * | 2011-05-31 | 2012-12-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| WO2015056750A1 (ja) * | 2013-10-17 | 2015-04-23 | 株式会社村田製作所 | ナノ粒子材料、及び発光デバイス |
| WO2015076300A1 (ja) * | 2013-11-19 | 2015-05-28 | 京セラ株式会社 | 光電変換層および光電変換装置 |
| US20150295107A1 (en) * | 2011-08-28 | 2015-10-15 | Edward Hartley Sargent | Quantum dot photo-field-effect transistor |
| WO2016017763A1 (ja) * | 2014-07-30 | 2016-02-04 | 京セラ株式会社 | 量子ドット太陽電池 |
| JP2016162886A (ja) * | 2015-03-02 | 2016-09-05 | 京セラ株式会社 | 光電変換装置 |
| WO2017006520A1 (ja) * | 2015-07-08 | 2017-01-12 | パナソニックＩｐマネジメント株式会社 | 撮像装置 |
| WO2017038698A1 (ja) * | 2015-08-28 | 2017-03-09 | 京セラ株式会社 | 光電変換装置 |
| US20180254421A1 (en) * | 2015-10-02 | 2018-09-06 | Toyota Motor Europe | All quantum dot based optoelectronic device |
| JP2020150251A (ja) * | 2019-03-11 | 2020-09-17 | キヤノン株式会社 | 量子ドット、それを有する光電変換素子、受光素子、光電変換装置、移動体、量子ドットの製造方法、光電変換素子の製造方法 |
| JP2021064663A (ja) * | 2019-10-11 | 2021-04-22 | キヤノン株式会社 | 光電変換素子 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2013139232A (ru) | 2011-02-28 | 2015-04-10 | Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. | Устройства преобразования с повышением частоты, содержащие широкополосный поглотитель |
| CA2948486A1 (en) * | 2014-05-09 | 2015-11-12 | Massachusetts Institute Of Technology | Energy level modification of nanocrystals through ligand exchange |
| EP3544074B1 (en) * | 2018-03-19 | 2025-06-04 | Samsung Electronics Co., Ltd. | Electroluminescent device, and display device comprising thereof |
| KR102718280B1 (ko) * | 2019-09-20 | 2024-10-15 | 삼성전자주식회사 | 전계 발광 소자 및 이를 포함하는 표시 장치 |
-
2022
- 2022-04-19 EP EP22804489.7A patent/EP4343858A4/en active Pending
- 2022-04-19 CN CN202280035010.1A patent/CN117321781A/zh active Pending
- 2022-04-19 JP JP2023522339A patent/JPWO2022244575A1/ja active Pending
- 2022-04-19 WO PCT/JP2022/018142 patent/WO2022244575A1/ja not_active Ceased
-
2023
- 2023-10-20 US US18/490,823 patent/US20240049490A1/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090255580A1 (en) * | 2008-03-24 | 2009-10-15 | Neil Dasgupta | Quantum dot solar cell with quantum dot bandgap gradients |
| KR20120133700A (ko) * | 2011-05-31 | 2012-12-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| US20150295107A1 (en) * | 2011-08-28 | 2015-10-15 | Edward Hartley Sargent | Quantum dot photo-field-effect transistor |
| WO2015056750A1 (ja) * | 2013-10-17 | 2015-04-23 | 株式会社村田製作所 | ナノ粒子材料、及び発光デバイス |
| WO2015076300A1 (ja) * | 2013-11-19 | 2015-05-28 | 京セラ株式会社 | 光電変換層および光電変換装置 |
| WO2016017763A1 (ja) * | 2014-07-30 | 2016-02-04 | 京セラ株式会社 | 量子ドット太陽電池 |
| JP2016162886A (ja) * | 2015-03-02 | 2016-09-05 | 京セラ株式会社 | 光電変換装置 |
| WO2017006520A1 (ja) * | 2015-07-08 | 2017-01-12 | パナソニックＩｐマネジメント株式会社 | 撮像装置 |
| WO2017038698A1 (ja) * | 2015-08-28 | 2017-03-09 | 京セラ株式会社 | 光電変換装置 |
| US20180254421A1 (en) * | 2015-10-02 | 2018-09-06 | Toyota Motor Europe | All quantum dot based optoelectronic device |
| JP2020150251A (ja) * | 2019-03-11 | 2020-09-17 | キヤノン株式会社 | 量子ドット、それを有する光電変換素子、受光素子、光電変換装置、移動体、量子ドットの製造方法、光電変換素子の製造方法 |
| JP2021064663A (ja) * | 2019-10-11 | 2021-04-22 | キヤノン株式会社 | 光電変換素子 |
Non-Patent Citations (1)
| Title |
|---|
| PRADHAN, SANTANU ET AL.: "Trap-State Suppression and Improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic", SMALL, vol. Volume 13, Issue 21, 1700598, JPN6022022844, 12 April 2017 (2017-04-12), pages 1 - 9, ISSN: 0005692870 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4343858A1 (en) | 2024-03-27 |
| CN117321781A (zh) | 2023-12-29 |
| US20240049490A1 (en) | 2024-02-08 |
| WO2022244575A1 (ja) | 2022-11-24 |
| EP4343858A4 (en) | 2024-11-13 |
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