CN117321781A - 光电转换元件和摄像装置 - Google Patents

光电转换元件和摄像装置 Download PDF

Info

Publication number
CN117321781A
CN117321781A CN202280035010.1A CN202280035010A CN117321781A CN 117321781 A CN117321781 A CN 117321781A CN 202280035010 A CN202280035010 A CN 202280035010A CN 117321781 A CN117321781 A CN 117321781A
Authority
CN
China
Prior art keywords
photoelectric conversion
quantum dot
electrode
layer
quantum dots
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280035010.1A
Other languages
English (en)
Chinese (zh)
Inventor
町田真一
松川望
佐野文哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN117321781A publication Critical patent/CN117321781A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/664—Halogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
CN202280035010.1A 2021-05-21 2022-04-19 光电转换元件和摄像装置 Pending CN117321781A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-086045 2021-05-21
JP2021086045 2021-05-21
PCT/JP2022/018142 WO2022244575A1 (ja) 2021-05-21 2022-04-19 光電変換素子および撮像装置

Publications (1)

Publication Number Publication Date
CN117321781A true CN117321781A (zh) 2023-12-29

Family

ID=84141353

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280035010.1A Pending CN117321781A (zh) 2021-05-21 2022-04-19 光电转换元件和摄像装置

Country Status (5)

Country Link
US (1) US20240049490A1 (https=)
EP (1) EP4343858A4 (https=)
JP (1) JPWO2022244575A1 (https=)
CN (1) CN117321781A (https=)
WO (1) WO2022244575A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240081086A1 (en) * 2020-12-22 2024-03-07 Sharp Kabushiki Kaisha Ligh-emitting element and light-emitting device
WO2024176881A1 (ja) * 2023-02-22 2024-08-29 富士フイルム株式会社 半導体膜、光検出素子、イメージセンサ、分散液および半導体膜の製造方法
WO2024176882A1 (ja) * 2023-02-22 2024-08-29 富士フイルム株式会社 光検出素子およびイメージセンサ
KR20250008602A (ko) * 2023-07-06 2025-01-15 삼성디스플레이 주식회사 양자점 복합체, 양자점 복합체를 포함하는 발광 소자, 및 양자점 복합체를 포함하는 표시 장치
WO2025047466A1 (ja) * 2023-08-30 2025-03-06 富士フイルム株式会社 半導体膜、光検出素子およびイメージセンサ
TW202541655A (zh) * 2023-09-29 2025-10-16 美商艾德亞半導體接合科技有限公司 堆疊式量子點感測器及其形成方法
WO2025120799A1 (ja) * 2023-12-07 2025-06-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
RU2013139232A (ru) 2011-02-28 2015-04-10 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Устройства преобразования с повышением частоты, содержащие широкополосный поглотитель
KR20120133700A (ko) * 2011-05-31 2012-12-11 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US9030189B2 (en) * 2011-08-28 2015-05-12 Edward Hartley Sargent Quantum dot photo-field-effect transistor
WO2015056750A1 (ja) * 2013-10-17 2015-04-23 株式会社村田製作所 ナノ粒子材料、及び発光デバイス
US20160276507A1 (en) 2013-11-19 2016-09-22 Kyocera Corporation Photoelectric conversion layer and photoelectric conversion device
CA2948486A1 (en) * 2014-05-09 2015-11-12 Massachusetts Institute Of Technology Energy level modification of nanocrystals through ligand exchange
WO2016017763A1 (ja) * 2014-07-30 2016-02-04 京セラ株式会社 量子ドット太陽電池
JP2016162886A (ja) * 2015-03-02 2016-09-05 京セラ株式会社 光電変換装置
WO2017006520A1 (ja) * 2015-07-08 2017-01-12 パナソニックＩｐマネジメント株式会社 撮像装置
JP6298223B2 (ja) 2015-08-28 2018-03-20 京セラ株式会社 光電変換装置
US10897023B2 (en) * 2015-10-02 2021-01-19 Toyota Motor Europe All quantum dot based optoelectronic device
EP3544074B1 (en) * 2018-03-19 2025-06-04 Samsung Electronics Co., Ltd. Electroluminescent device, and display device comprising thereof
JP7527774B2 (ja) * 2019-03-11 2024-08-05 キヤノン株式会社 量子ドット、それを有する光電変換素子、受光素子、光電変換装置、移動体、量子ドットの製造方法、光電変換素子の製造方法
KR102718280B1 (ko) * 2019-09-20 2024-10-15 삼성전자주식회사 전계 발광 소자 및 이를 포함하는 표시 장치
JP7391600B2 (ja) * 2019-10-11 2023-12-05 キヤノン株式会社 光電変換素子

Also Published As

Publication number Publication date
EP4343858A1 (en) 2024-03-27
US20240049490A1 (en) 2024-02-08
JPWO2022244575A1 (https=) 2022-11-24
WO2022244575A1 (ja) 2022-11-24
EP4343858A4 (en) 2024-11-13

Similar Documents

Publication Publication Date Title
CN117321781A (zh) 光电转换元件和摄像装置
Ghosh et al. Recent advances in perovskite/2D materials based hybrid photodetectors
US12376393B2 (en) Image sensor including control electrode, transparent electrode, and connection layer electrically connecting control electrode to side surface of transparent electrode
EP2483925A1 (en) Quantum dot-fullerene junction based photodetectors
CN107534050A (zh) 图像传感器、层叠型摄像装置和摄像模块
EP3923361A1 (en) Photoelectric conversion element and imaging device
US20240381677A1 (en) Photoelectric conversion element and imaging apparatus
JP7660285B2 (ja) 撮像装置
JP7713649B2 (ja) 撮像装置および駆動方法
US20250024694A1 (en) Imaging device
US20210273019A1 (en) Imaging device, method for manufacturing imaging device, and imaging apparatus
CN114586182A (zh) 光电转换元件、电子设备及发光装置
US11777050B2 (en) Optical sensor
JP7620852B2 (ja) 撮像装置
WO2021149414A1 (ja) 撮像装置
US20240065013A1 (en) Photoelectric conversion element, imaging apparatus, and method for driving photoelectric conversion element
US20250393385A1 (en) Photoelectric conversion element and imaging device
US12082427B2 (en) Imaging device, method for manufacturing imaging device, and imaging apparatus
US20230354626A1 (en) Imaging device
CN118104414A (zh) 摄像装置
WO2024150622A1 (ja) 光電変換素子および撮像装置
WO2024214448A1 (ja) 光電変換素子および撮像装置
WO2024214596A1 (ja) 撮像装置
WO2024214449A1 (ja) 撮像装置
CN118648114A (zh) 功能元件及其制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination