JPWO2022239717A1 - - Google Patents
Info
- Publication number
- JPWO2022239717A1 JPWO2022239717A1 JP2023521004A JP2023521004A JPWO2022239717A1 JP WO2022239717 A1 JPWO2022239717 A1 JP WO2022239717A1 JP 2023521004 A JP2023521004 A JP 2023521004A JP 2023521004 A JP2023521004 A JP 2023521004A JP WO2022239717 A1 JPWO2022239717 A1 JP WO2022239717A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/224—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021079848 | 2021-05-10 | ||
| JP2021079848 | 2021-05-10 | ||
| PCT/JP2022/019619 WO2022239717A1 (ja) | 2021-05-10 | 2022-05-09 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022239717A1 true JPWO2022239717A1 (https=) | 2022-11-17 |
| JPWO2022239717A5 JPWO2022239717A5 (https=) | 2024-02-13 |
| JP7647880B2 JP7647880B2 (ja) | 2025-03-18 |
Family
ID=84029613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023521004A Active JP7647880B2 (ja) | 2021-05-10 | 2022-05-09 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12424383B2 (https=) |
| JP (1) | JP7647880B2 (https=) |
| CN (1) | CN117280433A (https=) |
| WO (1) | WO2022239717A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121693790A (zh) * | 2023-09-08 | 2026-03-17 | 株式会社村田制作所 | 无源电子部件 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008153497A (ja) * | 2006-12-19 | 2008-07-03 | Murata Mfg Co Ltd | 誘電体薄膜キャパシタの製造方法 |
| JP2008252011A (ja) * | 2007-03-30 | 2008-10-16 | Taiyo Yuden Co Ltd | 誘電体キャパシタ |
| WO2008149622A1 (ja) * | 2007-05-30 | 2008-12-11 | Kyocera Corporation | キャパシタ，共振器、フィルタ装置，通信装置、並びに電気回路 |
| WO2018008625A1 (ja) * | 2016-07-07 | 2018-01-11 | 株式会社村田製作所 | キャパシタ |
| JP2020115587A (ja) * | 2016-06-28 | 2020-07-30 | 株式会社村田製作所 | キャパシタ |
| JP2020202307A (ja) * | 2019-06-11 | 2020-12-17 | 株式会社村田製作所 | キャパシタ |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0547586A (ja) | 1991-08-16 | 1993-02-26 | Toshiba Corp | コンデンサ部品 |
| TW563142B (en) * | 2001-07-12 | 2003-11-21 | Hitachi Ltd | Thin film capacitor, and electronic circuit component |
| US6635498B2 (en) * | 2001-12-20 | 2003-10-21 | Texas Instruments Incorporated | Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etch |
| JP4166013B2 (ja) | 2001-12-26 | 2008-10-15 | 富士通株式会社 | 薄膜キャパシタ製造方法 |
| JP2006196871A (ja) * | 2004-12-15 | 2006-07-27 | Kyocera Corp | 薄膜コンデンサおよび可変容量コンデンサならびに電子部品 |
| WO2006117912A1 (ja) * | 2005-04-27 | 2006-11-09 | Murata Manufacturing Co., Ltd | 薄膜キャパシタおよびその製造方法 |
| US7304339B2 (en) * | 2005-09-22 | 2007-12-04 | Agile Rf, Inc. | Passivation structure for ferroelectric thin-film devices |
| JP4596167B2 (ja) * | 2006-02-24 | 2010-12-08 | セイコーエプソン株式会社 | キャパシタの製造方法 |
| JP5098422B2 (ja) * | 2007-04-27 | 2012-12-12 | 株式会社村田製作所 | 薄膜電子部品 |
| JP6489202B2 (ja) * | 2015-02-27 | 2019-03-27 | 株式会社村田製作所 | キャパシタ |
| JP6737118B2 (ja) * | 2016-10-11 | 2020-08-05 | Tdk株式会社 | 薄膜コンデンサ |
| WO2019026771A1 (ja) * | 2017-07-31 | 2019-02-07 | 株式会社村田製作所 | キャパシタ |
| JP2022144464A (ja) * | 2021-03-19 | 2022-10-03 | 住友電工デバイス・イノベーション株式会社 | キャパシタ |
-
2022
- 2022-05-09 CN CN202280033507.XA patent/CN117280433A/zh active Pending
- 2022-05-09 JP JP2023521004A patent/JP7647880B2/ja active Active
- 2022-05-09 WO PCT/JP2022/019619 patent/WO2022239717A1/ja not_active Ceased
-
2023
- 2023-10-30 US US18/497,066 patent/US12424383B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008153497A (ja) * | 2006-12-19 | 2008-07-03 | Murata Mfg Co Ltd | 誘電体薄膜キャパシタの製造方法 |
| JP2008252011A (ja) * | 2007-03-30 | 2008-10-16 | Taiyo Yuden Co Ltd | 誘電体キャパシタ |
| WO2008149622A1 (ja) * | 2007-05-30 | 2008-12-11 | Kyocera Corporation | キャパシタ，共振器、フィルタ装置，通信装置、並びに電気回路 |
| JP2020115587A (ja) * | 2016-06-28 | 2020-07-30 | 株式会社村田製作所 | キャパシタ |
| WO2018008625A1 (ja) * | 2016-07-07 | 2018-01-11 | 株式会社村田製作所 | キャパシタ |
| JP2020202307A (ja) * | 2019-06-11 | 2020-12-17 | 株式会社村田製作所 | キャパシタ |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117280433A (zh) | 2023-12-22 |
| JP7647880B2 (ja) | 2025-03-18 |
| WO2022239717A1 (ja) | 2022-11-17 |
| US12424383B2 (en) | 2025-09-23 |
| US20240062958A1 (en) | 2024-02-22 |
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