JPWO2022220224A5 - - Google Patents
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- Publication number
- JPWO2022220224A5 JPWO2022220224A5 JP2023514644A JP2023514644A JPWO2022220224A5 JP WO2022220224 A5 JPWO2022220224 A5 JP WO2022220224A5 JP 2023514644 A JP2023514644 A JP 2023514644A JP 2023514644 A JP2023514644 A JP 2023514644A JP WO2022220224 A5 JPWO2022220224 A5 JP WO2022220224A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon
- etching method
- substrate support
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021068571 | 2021-04-14 | ||
| JP2021068571 | 2021-04-14 | ||
| PCT/JP2022/017522 WO2022220224A1 (ja) | 2021-04-14 | 2022-04-11 | エッチング方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022220224A1 JPWO2022220224A1 (https=) | 2022-10-20 |
| JPWO2022220224A5 true JPWO2022220224A5 (https=) | 2024-06-03 |
| JP7650349B2 JP7650349B2 (ja) | 2025-03-24 |
Family
ID=83640063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023514644A Active JP7650349B2 (ja) | 2021-04-14 | 2022-04-11 | エッチング方法及びプラズマ処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12603254B2 (https=) |
| JP (1) | JP7650349B2 (https=) |
| KR (1) | KR20230165819A (https=) |
| CN (1) | CN117099189A (https=) |
| WO (1) | WO2022220224A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250022715A1 (en) * | 2023-07-10 | 2025-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma etching processes |
| CN120077468A (zh) * | 2023-09-29 | 2025-05-30 | 东京毅力科创株式会社 | 蚀刻方法和等离子体处理装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7547636B2 (en) * | 2007-02-05 | 2009-06-16 | Lam Research Corporation | Pulsed ultra-high aspect ratio dielectric etch |
| JP6328524B2 (ja) | 2014-08-29 | 2018-05-23 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6410592B2 (ja) | 2014-12-18 | 2018-10-24 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US9543148B1 (en) * | 2015-09-01 | 2017-01-10 | Lam Research Corporation | Mask shrink layer for high aspect ratio dielectric etch |
| JP6945388B2 (ja) * | 2017-08-23 | 2021-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング処理装置 |
| JP6959999B2 (ja) * | 2019-04-19 | 2021-11-05 | 株式会社日立ハイテク | プラズマ処理方法 |
| KR102827901B1 (ko) | 2019-05-21 | 2025-07-01 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| WO2021162871A1 (en) * | 2020-02-13 | 2021-08-19 | Lam Research Corporation | High aspect ratio etch with infinite selectivity |
| CN113571403A (zh) * | 2020-04-28 | 2021-10-29 | 东京毅力科创株式会社 | 等离子体处理装置及等离子体处理方法 |
-
2022
- 2022-04-11 KR KR1020237037726A patent/KR20230165819A/ko active Pending
- 2022-04-11 JP JP2023514644A patent/JP7650349B2/ja active Active
- 2022-04-11 CN CN202280026699.1A patent/CN117099189A/zh active Pending
- 2022-04-11 WO PCT/JP2022/017522 patent/WO2022220224A1/ja not_active Ceased
-
2023
- 2023-10-13 US US18/380,066 patent/US12603254B2/en active Active
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