JP7650349B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

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Publication number
JP7650349B2
JP7650349B2 JP2023514644A JP2023514644A JP7650349B2 JP 7650349 B2 JP7650349 B2 JP 7650349B2 JP 2023514644 A JP2023514644 A JP 2023514644A JP 2023514644 A JP2023514644 A JP 2023514644A JP 7650349 B2 JP7650349 B2 JP 7650349B2
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Japan
Prior art keywords
gas
bias
silicon
substrate support
etching method
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JP2023514644A
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English (en)
Japanese (ja)
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JPWO2022220224A1 (https=
JPWO2022220224A5 (https=
Inventor
顕 中川
賢次 小松
一真 上村
司 平山
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2023514644A 2021-04-14 2022-04-11 エッチング方法及びプラズマ処理装置 Active JP7650349B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021068571 2021-04-14
JP2021068571 2021-04-14
PCT/JP2022/017522 WO2022220224A1 (ja) 2021-04-14 2022-04-11 エッチング方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JPWO2022220224A1 JPWO2022220224A1 (https=) 2022-10-20
JPWO2022220224A5 JPWO2022220224A5 (https=) 2024-06-03
JP7650349B2 true JP7650349B2 (ja) 2025-03-24

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JP2023514644A Active JP7650349B2 (ja) 2021-04-14 2022-04-11 エッチング方法及びプラズマ処理装置

Country Status (5)

Country Link
US (1) US12603254B2 (https=)
JP (1) JP7650349B2 (https=)
KR (1) KR20230165819A (https=)
CN (1) CN117099189A (https=)
WO (1) WO2022220224A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250022715A1 (en) * 2023-07-10 2025-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etching processes
CN120077468A (zh) * 2023-09-29 2025-05-30 东京毅力科创株式会社 蚀刻方法和等离子体处理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239729A (ja) 2007-02-05 2013-11-28 Lam Research Corporation 超高アスペクト比の誘電体パルスエッチング
US20170076945A1 (en) 2015-09-01 2017-03-16 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
JP2019040959A (ja) 2017-08-23 2019-03-14 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
WO2020008703A1 (ja) 2019-04-19 2020-01-09 株式会社日立ハイテクノロジーズ プラズマ処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6328524B2 (ja) 2014-08-29 2018-05-23 東京エレクトロン株式会社 エッチング方法
JP6410592B2 (ja) 2014-12-18 2018-10-24 東京エレクトロン株式会社 プラズマエッチング方法
KR102827901B1 (ko) 2019-05-21 2025-07-01 삼성전자주식회사 반도체 소자의 제조 방법
WO2021162871A1 (en) * 2020-02-13 2021-08-19 Lam Research Corporation High aspect ratio etch with infinite selectivity
CN113571403A (zh) * 2020-04-28 2021-10-29 东京毅力科创株式会社 等离子体处理装置及等离子体处理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239729A (ja) 2007-02-05 2013-11-28 Lam Research Corporation 超高アスペクト比の誘電体パルスエッチング
US20170076945A1 (en) 2015-09-01 2017-03-16 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
JP2019040959A (ja) 2017-08-23 2019-03-14 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
WO2020008703A1 (ja) 2019-04-19 2020-01-09 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
US12603254B2 (en) 2026-04-14
TW202247281A (zh) 2022-12-01
JPWO2022220224A1 (https=) 2022-10-20
US20240038501A1 (en) 2024-02-01
CN117099189A (zh) 2023-11-21
WO2022220224A1 (ja) 2022-10-20
KR20230165819A (ko) 2023-12-05

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