JPWO2022176503A5 - - Google Patents

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Publication number
JPWO2022176503A5
JPWO2022176503A5 JP2023500655A JP2023500655A JPWO2022176503A5 JP WO2022176503 A5 JPWO2022176503 A5 JP WO2022176503A5 JP 2023500655 A JP2023500655 A JP 2023500655A JP 2023500655 A JP2023500655 A JP 2023500655A JP WO2022176503 A5 JPWO2022176503 A5 JP WO2022176503A5
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JP
Japan
Prior art keywords
semiconductor layer
type semiconductor
insulating film
detection device
regions
Prior art date
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JP2023500655A
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English (en)
Japanese (ja)
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JP7550952B2 (ja
JPWO2022176503A1 (https=
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Priority claimed from PCT/JP2022/002147 external-priority patent/WO2022176503A1/ja
Publication of JPWO2022176503A1 publication Critical patent/JPWO2022176503A1/ja
Publication of JPWO2022176503A5 publication Critical patent/JPWO2022176503A5/ja
Application granted granted Critical
Publication of JP7550952B2 publication Critical patent/JP7550952B2/ja
Active legal-status Critical Current
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JP2023500655A 2021-02-22 2022-01-21 検出装置 Active JP7550952B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021026604 2021-02-22
JP2021026604 2021-02-22
PCT/JP2022/002147 WO2022176503A1 (ja) 2021-02-22 2022-01-21 検出装置

Publications (3)

Publication Number Publication Date
JPWO2022176503A1 JPWO2022176503A1 (https=) 2022-08-25
JPWO2022176503A5 true JPWO2022176503A5 (https=) 2023-09-05
JP7550952B2 JP7550952B2 (ja) 2024-09-13

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ID=82930810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023500655A Active JP7550952B2 (ja) 2021-02-22 2022-01-21 検出装置

Country Status (3)

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US (1) US20230397449A1 (https=)
JP (1) JP7550952B2 (https=)
WO (1) WO2022176503A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114597220A (zh) * 2022-03-02 2022-06-07 武汉华星光电技术有限公司 指纹采集器件、显示面板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
JP5439984B2 (ja) * 2009-07-03 2014-03-12 ソニー株式会社 光電変換装置および放射線撮像装置
JP6028233B2 (ja) 2011-05-27 2016-11-16 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および光電変換装置
JP2016105377A (ja) * 2014-12-01 2016-06-09 株式会社ジャパンディスプレイ 表示装置
KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
KR102480089B1 (ko) * 2017-12-01 2022-12-23 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조방법
JP2019169670A (ja) * 2018-03-26 2019-10-03 シャープ株式会社 アクティブマトリクス基板、及びそれを備えたx線撮像パネル
JP7274284B2 (ja) 2018-12-21 2023-05-16 株式会社ジャパンディスプレイ 検出装置
US11856814B2 (en) * 2019-04-12 2023-12-26 HKC Corporation Limited Display panel and manufacturing method thereof
CN112349232B (zh) * 2019-08-06 2025-04-08 群创光电股份有限公司 显示设备及电子设备
CN114342079B (zh) 2019-08-30 2025-01-07 株式会社日本显示器 检测装置
JP7467061B2 (ja) 2019-10-09 2024-04-15 株式会社ジャパンディスプレイ 検出装置

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