JPWO2022176386A1 - - Google Patents
Info
- Publication number
- JPWO2022176386A1 JPWO2022176386A1 JP2023500588A JP2023500588A JPWO2022176386A1 JP WO2022176386 A1 JPWO2022176386 A1 JP WO2022176386A1 JP 2023500588 A JP2023500588 A JP 2023500588A JP 2023500588 A JP2023500588 A JP 2023500588A JP WO2022176386 A1 JPWO2022176386 A1 JP WO2022176386A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021024485 | 2021-02-18 | ||
| PCT/JP2021/047591 WO2022176386A1 (ja) | 2021-02-18 | 2021-12-22 | 半導体装置および半導体装置の作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022176386A1 true JPWO2022176386A1 (https=) | 2022-08-25 |
Family
ID=82930629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023500588A Pending JPWO2022176386A1 (https=) | 2021-02-18 | 2021-12-22 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230387320A1 (https=) |
| JP (1) | JPWO2022176386A1 (https=) |
| CN (1) | CN116868350A (https=) |
| WO (1) | WO2022176386A1 (https=) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0756189A (ja) * | 1993-08-12 | 1995-03-03 | Seiko Epson Corp | 薄膜半導体装置およびその製造方法 |
| JPH11112002A (ja) * | 1997-10-07 | 1999-04-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその製造方法 |
| JP2000002892A (ja) * | 1998-04-17 | 2000-01-07 | Toshiba Corp | 液晶表示装置、マトリクスアレイ基板およびその製造方法 |
| JP2009049398A (ja) * | 2007-07-26 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009177138A (ja) * | 2007-12-03 | 2009-08-06 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ、及び薄膜トランジスタを有する表示装置 |
| JP2013016782A (ja) * | 2011-06-10 | 2013-01-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2015144250A (ja) * | 2013-12-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US20160233338A1 (en) * | 2015-02-09 | 2016-08-11 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with source and drain regions doped at room temperature |
| WO2016175086A1 (ja) * | 2015-04-28 | 2016-11-03 | シャープ株式会社 | 半導体装置及びその製造方法 |
| WO2018199037A1 (ja) * | 2017-04-28 | 2018-11-01 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
-
2021
- 2021-12-22 JP JP2023500588A patent/JPWO2022176386A1/ja active Pending
- 2021-12-22 WO PCT/JP2021/047591 patent/WO2022176386A1/ja not_active Ceased
- 2021-12-22 CN CN202180094159.2A patent/CN116868350A/zh active Pending
-
2023
- 2023-08-10 US US18/447,470 patent/US20230387320A1/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0756189A (ja) * | 1993-08-12 | 1995-03-03 | Seiko Epson Corp | 薄膜半導体装置およびその製造方法 |
| JPH11112002A (ja) * | 1997-10-07 | 1999-04-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその製造方法 |
| JP2000002892A (ja) * | 1998-04-17 | 2000-01-07 | Toshiba Corp | 液晶表示装置、マトリクスアレイ基板およびその製造方法 |
| JP2009049398A (ja) * | 2007-07-26 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009177138A (ja) * | 2007-12-03 | 2009-08-06 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ、及び薄膜トランジスタを有する表示装置 |
| JP2013016782A (ja) * | 2011-06-10 | 2013-01-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2015144250A (ja) * | 2013-12-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US20160233338A1 (en) * | 2015-02-09 | 2016-08-11 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with source and drain regions doped at room temperature |
| WO2016175086A1 (ja) * | 2015-04-28 | 2016-11-03 | シャープ株式会社 | 半導体装置及びその製造方法 |
| WO2018199037A1 (ja) * | 2017-04-28 | 2018-11-01 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022176386A1 (ja) | 2022-08-25 |
| CN116868350A (zh) | 2023-10-10 |
| US20230387320A1 (en) | 2023-11-30 |
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