CN116868350A - 半导体器件和半导体器件的制作方法 - Google Patents

半导体器件和半导体器件的制作方法 Download PDF

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Publication number
CN116868350A
CN116868350A CN202180094159.2A CN202180094159A CN116868350A CN 116868350 A CN116868350 A CN 116868350A CN 202180094159 A CN202180094159 A CN 202180094159A CN 116868350 A CN116868350 A CN 116868350A
Authority
CN
China
Prior art keywords
layer
region
oxide semiconductor
conductive layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180094159.2A
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English (en)
Chinese (zh)
Inventor
花田明纮
渡壁创
小野寺凉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Magno Haote Co ltd
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Publication of CN116868350A publication Critical patent/CN116868350A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
CN202180094159.2A 2021-02-18 2021-12-22 半导体器件和半导体器件的制作方法 Pending CN116868350A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-024485 2021-02-18
JP2021024485 2021-02-18
PCT/JP2021/047591 WO2022176386A1 (ja) 2021-02-18 2021-12-22 半導体装置および半導体装置の作製方法

Publications (1)

Publication Number Publication Date
CN116868350A true CN116868350A (zh) 2023-10-10

Family

ID=82930629

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180094159.2A Pending CN116868350A (zh) 2021-02-18 2021-12-22 半导体器件和半导体器件的制作方法

Country Status (4)

Country Link
US (1) US20230387320A1 (https=)
JP (1) JPWO2022176386A1 (https=)
CN (1) CN116868350A (https=)
WO (1) WO2022176386A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3362467B2 (ja) * 1993-08-12 2003-01-07 セイコーエプソン株式会社 薄膜半導体装置の製造方法
JPH11112002A (ja) * 1997-10-07 1999-04-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその製造方法
JP2000002892A (ja) * 1998-04-17 2000-01-07 Toshiba Corp 液晶表示装置、マトリクスアレイ基板およびその製造方法
US8048749B2 (en) * 2007-07-26 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI481029B (zh) * 2007-12-03 2015-04-11 半導體能源研究所股份有限公司 半導體裝置
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6506545B2 (ja) * 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
US9960281B2 (en) * 2015-02-09 2018-05-01 The Hong Kong University Of Science And Technology Metal oxide thin film transistor with source and drain regions doped at room temperature
US10468533B2 (en) * 2015-04-28 2019-11-05 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
WO2018199037A1 (ja) * 2017-04-28 2018-11-01 シャープ株式会社 アクティブマトリクス基板およびその製造方法

Also Published As

Publication number Publication date
JPWO2022176386A1 (https=) 2022-08-25
WO2022176386A1 (ja) 2022-08-25
US20230387320A1 (en) 2023-11-30

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Effective date of registration: 20250715

Address after: Tokyo, Japan

Applicant after: Magno Haote Co.,Ltd.

Country or region after: Japan

Address before: Tokyo, Japan

Applicant before: JAPAN DISPLAY Inc.

Country or region before: Japan