JPWO2022054150A1 - - Google Patents

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Publication number
JPWO2022054150A1
JPWO2022054150A1 JP2022513331A JP2022513331A JPWO2022054150A1 JP WO2022054150 A1 JPWO2022054150 A1 JP WO2022054150A1 JP 2022513331 A JP2022513331 A JP 2022513331A JP 2022513331 A JP2022513331 A JP 2022513331A JP WO2022054150 A1 JPWO2022054150 A1 JP WO2022054150A1
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JP
Japan
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JP2022513331A
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JP7293500B2 (ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)
JP2022513331A 2020-09-09 2020-09-09 透明電極、透明電極の製造方法、および電子デバイス Active JP7293500B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/034040 WO2022054150A1 (ja) 2020-09-09 2020-09-09 透明電極、透明電極の製造方法、および電子デバイス

Publications (2)

Publication Number Publication Date
JPWO2022054150A1 true JPWO2022054150A1 (ja) 2022-03-17
JP7293500B2 JP7293500B2 (ja) 2023-06-19

Family

ID=80631373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022513331A Active JP7293500B2 (ja) 2020-09-09 2020-09-09 透明電極、透明電極の製造方法、および電子デバイス

Country Status (5)

Country Link
US (1) US20220181569A1 (ja)
EP (1) EP4213220A4 (ja)
JP (1) JP7293500B2 (ja)
CN (1) CN114600255A (ja)
WO (1) WO2022054150A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240029634A (ko) * 2022-08-25 2024-03-06 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN115548142B (zh) 2022-11-28 2023-03-21 浙江晶科能源有限公司 一种太阳能电池及光伏组件
CN117374135B (zh) * 2023-12-04 2024-03-22 广东省载诚新材料有限公司 一种金属氧化物复合导电膜及其在制备异质结太阳能电池中的应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150130726A1 (en) * 2013-11-08 2015-05-14 Samsung Display Co., Ltd. Organic light-emitting diode (oled) display
CN105038222A (zh) * 2015-08-11 2015-11-11 河南科技大学 一种石墨烯/聚乙烯亚胺阻气复合膜及其制备方法
JP2017135379A (ja) * 2016-01-21 2017-08-03 株式会社東芝 透明電極、電子デバイス、および電子デバイスの製造方法
KR20180020624A (ko) * 2016-08-19 2018-02-28 동우 화인켐 주식회사 필름 터치 센서 및 필름 터치 센서용 구조체
KR20180098019A (ko) * 2017-02-24 2018-09-03 동우 화인켐 주식회사 투명 전극 및 그 제조 방법
JP2019021599A (ja) * 2017-07-21 2019-02-07 株式会社東芝 透明電極、およびその製造方法、ならびにその透明電極を用いた電子デバイス

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296043A (en) * 1990-02-16 1994-03-22 Canon Kabushiki Kaisha Multi-cells integrated solar cell module and process for producing the same
JP4467692B2 (ja) * 1999-12-22 2010-05-26 株式会社半導体エネルギー研究所 太陽電池及びその作製方法
US6930025B2 (en) * 2001-02-01 2005-08-16 Canon Kabushiki Kaisha Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device
US8455753B2 (en) * 2005-01-14 2013-06-04 Semiconductor Energy Laboratory Co., Ltd. Solar cell and semiconductor device, and manufacturing method thereof
JP4981020B2 (ja) * 2005-03-16 2012-07-18 コリア アドバンスト インスティテュート オブ サイエンス アンド テクノロジー 集積型薄膜太陽電池、その製造方法と集積型薄膜太陽電池用透明電極の加工方法、その構造及びその透明電極が形成された透明基板
KR100889457B1 (ko) * 2006-06-29 2009-03-17 주식회사 엘지화학 폴리에틸렌이민 화합물을 포함하는 회로 배선용 금속 나노잉크
JP5160565B2 (ja) * 2007-12-05 2013-03-13 株式会社カネカ 集積型薄膜光電変換装置とその製造方法
US8507310B2 (en) * 2008-12-04 2013-08-13 Mitsubishi Electric Corporation Method for manufacturing thin-film photoelectric conversion device
TW201116606A (en) * 2009-11-03 2011-05-16 Nat Univ Tsing Hua Method and an apparatus for transferring carbonaceous material layer
WO2011122743A1 (ko) * 2010-03-29 2011-10-06 성균관대학교 산학협력단 할로겐 원소가 포함된 환원제를 포함하는 그래핀옥사이드 환원제, 이에 의한 환원그래핀옥사이드의 제조방법 및 제조된 환원그래핀옥사이드의 용도
US10177261B2 (en) * 2010-10-05 2019-01-08 Samsung Electronics Co., Ltd. Transparent electrode comprising doped graphene, process of preparing the same, and display device and solar cell comprising the electrode
JP5627390B2 (ja) * 2010-10-22 2014-11-19 株式会社東芝 光電変換素子およびその製造方法
US20120277360A1 (en) * 2010-10-28 2012-11-01 Vorbeck Materials Corp. Graphene Compositions
WO2012170086A1 (en) * 2011-02-25 2012-12-13 William Marsh Rice University Sorption and separation of various materials by graphene oxides
KR101813172B1 (ko) * 2011-04-22 2017-12-29 삼성전자주식회사 그래핀 다중층의 제조방법
KR101304163B1 (ko) * 2011-07-04 2013-09-04 (주)엘지하우시스 시인성이 개선된 정전용량방식 터치패널
FR2980187B1 (fr) 2011-09-16 2013-10-18 Centre Nat Rech Scient Formulation de solutions colloidales a base d'oxyde de titane pour procedes d'enduction et d'impression : amelioration du rendement et de la duree de vie des cellules photovoltaiques organiques pin-nip
KR101388695B1 (ko) * 2011-10-24 2014-04-28 삼성전기주식회사 그래핀 투명전극 및 이의 제조방법
KR101539671B1 (ko) * 2011-11-21 2015-07-27 삼성전자주식회사 복합 투명 전극을 포함하는 그래핀 기반 포토 디텍터와 그 제조방법 및 포토 디텍터를 포함하는 장치
KR101479811B1 (ko) * 2011-12-02 2015-01-08 광 석 서 투명 전극 필름 제조용 기재 필름
WO2013094233A1 (ja) * 2011-12-21 2013-06-27 三菱電機株式会社 太陽電池およびその製造方法、太陽電池モジュール
TW201331127A (zh) * 2012-01-17 2013-08-01 Ritedia Corp 圖案化石墨烯製備方法
KR20130127781A (ko) * 2012-05-15 2013-11-25 삼성전기주식회사 투명 전극 및 이를 포함하는 전자 재료
CN103151468B (zh) * 2013-03-07 2015-08-19 深圳市华星光电技术有限公司 一种有机发光二极管及其制作方法、显示装置
JP6147542B2 (ja) * 2013-04-01 2017-06-14 株式会社東芝 透明導電フィルムおよび電気素子
KR101386765B1 (ko) * 2013-05-23 2014-04-21 동국대학교 산학협력단 그래핀이 코팅된 전도성 전자섬유 및 이의 제조방법
WO2014188092A1 (fr) * 2013-05-23 2014-11-27 Sunpartner Technologies Mono cellule photovoltaïque semi-transparente en couches minces
JP6314463B2 (ja) * 2013-12-11 2018-04-25 コニカミノルタ株式会社 透明導電体
KR20150112302A (ko) * 2014-03-27 2015-10-07 삼성전자주식회사 투명 전극
WO2016167583A1 (ko) * 2015-04-15 2016-10-20 엘지전자 주식회사 그래핀의 도핑 방법, 그래핀 복합 전극의 제조 방법 및 이를 포함하는 그래핀 구조체
CN104795434B (zh) * 2015-05-12 2019-01-29 京东方科技集团股份有限公司 Oled像素单元、透明显示装置及制作方法、显示设备
FR3037723B1 (fr) * 2015-06-16 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un empilement du type premiere electrode / couche active / deuxieme electrode.
EP3329520B1 (en) * 2015-07-28 2021-01-13 IMEC vzw Back contact photovoltaic cells with induced junctions
CN105493288B (zh) * 2015-09-15 2019-10-18 京东方科技集团股份有限公司 有机发光像素单元及制备方法，显示面板和显示装置
KR102581899B1 (ko) * 2015-11-04 2023-09-21 삼성전자주식회사 투명 전극 및 이를 포함하는 소자
KR102045106B1 (ko) * 2016-03-07 2019-11-14 주식회사 엘지화학 그래핀-탄소 나노 튜브 복합체, 이를 포함하는 촉매, 상기 촉매를 포함하는 막 전극 접합체, 상기 막 전극 접합체를 포함하는 연료 전지 및 그래핀-탄소 나노 튜브 복합체의 제조방법
US10903319B2 (en) * 2016-06-15 2021-01-26 Nanomedical Diagnostics, Inc. Patterning graphene with a hard mask coating
KR20180035057A (ko) * 2016-09-28 2018-04-05 코오롱인더스트리 주식회사 유기 태양전지 및 이의 제조 방법
CN106373989B (zh) * 2016-11-24 2019-10-22 上海天马有机发光显示技术有限公司 一种有机发光显示面板、电子设备以及制作方法
US10446633B2 (en) * 2017-10-24 2019-10-15 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Transparent OLED display with transparent storage capacitor and manufacturing method thereof
US10923726B2 (en) * 2018-03-08 2021-02-16 Korea Institute Of Science And Technology Artificial solid electrolyte interphase of a metallic anode for a secondary battery including amino-functionalized carbon structures to protect the anode material, a method for producing the anode and a lithium metal secondary battery including the anode produced by the method
CN111183357B (zh) * 2018-09-13 2022-09-02 株式会社东芝 含石墨烯膜的阴离子透过性评价方法和光电转换元件
KR20210053325A (ko) * 2018-09-14 2021-05-11 유비쿼터스 에너지 인코포레이티드 투명 광전지 디바이스용 다층 투명 전극을 위한 방법 및 시스템
CN111201626B (zh) * 2018-09-18 2023-09-12 株式会社东芝 光电转换元件及其制造方法
KR20200056938A (ko) * 2018-11-15 2020-05-25 주식회사 동진쎄미켐 투명전극 및 이를 채용한 터치패널
EP4358645A3 (en) * 2019-03-05 2024-06-26 Kabushiki Kaisha Toshiba Graphene-containing film, production method thereof, graphene-containing film laminate, and photoelectric conversion element
EP4030496A4 (en) * 2019-09-10 2023-05-31 Kabushiki Kaisha Toshiba METHOD FOR PRODUCING ELECTRODE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT
CN110518079B (zh) * 2019-09-29 2024-05-07 信利半导体有限公司 一种光电转换率高的薄膜光伏电池及其制备工艺
US11495708B2 (en) * 2019-10-31 2022-11-08 Korea Institute Of Science And Technology Method of fabricating see-through thin film solar cell
WO2021176518A1 (ja) * 2020-03-02 2021-09-10 株式会社 東芝 透明電極および透明電極の製造方法、ならびに透明電極を具備した光電変換素子
FR3112243A1 (fr) * 2020-07-02 2022-01-07 Microoled Dispositif optoelectronique matriciel en couches minces
JP7153166B2 (ja) * 2020-09-09 2022-10-13 株式会社東芝 透明電極、透明電極の製造方法、および電子デバイス
CN115465856A (zh) * 2021-06-10 2022-12-13 中国科学院上海微系统与信息技术研究所 图形化石墨烯的制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150130726A1 (en) * 2013-11-08 2015-05-14 Samsung Display Co., Ltd. Organic light-emitting diode (oled) display
CN105038222A (zh) * 2015-08-11 2015-11-11 河南科技大学 一种石墨烯/聚乙烯亚胺阻气复合膜及其制备方法
JP2017135379A (ja) * 2016-01-21 2017-08-03 株式会社東芝 透明電極、電子デバイス、および電子デバイスの製造方法
KR20180020624A (ko) * 2016-08-19 2018-02-28 동우 화인켐 주식회사 필름 터치 센서 및 필름 터치 센서용 구조체
KR20180098019A (ko) * 2017-02-24 2018-09-03 동우 화인켐 주식회사 투명 전극 및 그 제조 방법
JP2019021599A (ja) * 2017-07-21 2019-02-07 株式会社東芝 透明電極、およびその製造方法、ならびにその透明電極を用いた電子デバイス

Also Published As

Publication number Publication date
CN114600255A (zh) 2022-06-07
WO2022054150A1 (ja) 2022-03-17
EP4213220A4 (en) 2024-06-05
JP7293500B2 (ja) 2023-06-19
EP4213220A1 (en) 2023-07-19
US20220181569A1 (en) 2022-06-09

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