JPWO2022009556A5 - - Google Patents
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- Publication number
- JPWO2022009556A5 JPWO2022009556A5 JP2022534946A JP2022534946A JPWO2022009556A5 JP WO2022009556 A5 JPWO2022009556 A5 JP WO2022009556A5 JP 2022534946 A JP2022534946 A JP 2022534946A JP 2022534946 A JP2022534946 A JP 2022534946A JP WO2022009556 A5 JPWO2022009556 A5 JP WO2022009556A5
- Authority
- JP
- Japan
- Prior art keywords
- circuit pattern
- divided
- semiconductor device
- leg
- joined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 4
- 238000000034 method Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QLTBJHSQPNVBLW-UHFFFAOYSA-N [Bi].[In].[Ag].[Sn] Chemical compound [Bi].[In].[Ag].[Sn] QLTBJHSQPNVBLW-UHFFFAOYSA-N 0.000 description 1
- JVCDUTIVKYCTFB-UHFFFAOYSA-N [Bi].[Zn].[Sn] Chemical compound [Bi].[Zn].[Sn] JVCDUTIVKYCTFB-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020118648 | 2020-07-09 | ||
| JP2020118648 | 2020-07-09 | ||
| PCT/JP2021/020530 WO2022009556A1 (ja) | 2020-07-09 | 2021-05-28 | 半導体装置及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022009556A1 JPWO2022009556A1 (https=) | 2022-01-13 |
| JPWO2022009556A5 true JPWO2022009556A5 (https=) | 2022-09-14 |
| JP7428254B2 JP7428254B2 (ja) | 2024-02-06 |
Family
ID=79552333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022534946A Active JP7428254B2 (ja) | 2020-07-09 | 2021-05-28 | 半導体装置及び半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20220330429A1 (https=) |
| JP (1) | JP7428254B2 (https=) |
| CN (1) | CN114902389B (https=) |
| DE (1) | DE112021000211B4 (https=) |
| WO (1) | WO2022009556A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023168849A (ja) * | 2022-05-16 | 2023-11-29 | 富士電機株式会社 | 半導体装置、及び、半導体装置の製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3895465B2 (ja) * | 1998-05-14 | 2007-03-22 | 沖電気工業株式会社 | 基板の実装方法、基板の実装構造 |
| JP4537370B2 (ja) * | 2006-12-04 | 2010-09-01 | 日立オートモティブシステムズ株式会社 | 電子装置 |
| JP5555206B2 (ja) * | 2011-07-11 | 2014-07-23 | 株式会社 日立パワーデバイス | 半導体パワーモジュール |
| DE112014006908T5 (de) * | 2014-08-28 | 2017-05-11 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
| JPWO2017002268A1 (ja) * | 2015-07-02 | 2017-10-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| JP6755197B2 (ja) * | 2017-01-19 | 2020-09-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE102018204408B4 (de) * | 2018-03-22 | 2022-05-05 | Danfoss Silicon Power Gmbh | Stromschiene, verfahren zum herstellen derselben und leistungsmodul, welches eine solche aufweist |
| CN111386604B (zh) * | 2018-06-01 | 2023-12-19 | 富士电机株式会社 | 半导体装置 |
| US10862232B2 (en) * | 2018-08-02 | 2020-12-08 | Dell Products L.P. | Circuit board pad connector system |
-
2021
- 2021-05-28 CN CN202180007987.8A patent/CN114902389B/zh active Active
- 2021-05-28 JP JP2022534946A patent/JP7428254B2/ja active Active
- 2021-05-28 DE DE112021000211.2T patent/DE112021000211B4/de active Active
- 2021-05-28 WO PCT/JP2021/020530 patent/WO2022009556A1/ja not_active Ceased
-
2022
- 2022-06-30 US US17/855,162 patent/US20220330429A1/en active Pending
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