JPWO2021112098A1 - - Google Patents
Info
- Publication number
- JPWO2021112098A1 JPWO2021112098A1 JP2021562669A JP2021562669A JPWO2021112098A1 JP WO2021112098 A1 JPWO2021112098 A1 JP WO2021112098A1 JP 2021562669 A JP2021562669 A JP 2021562669A JP 2021562669 A JP2021562669 A JP 2021562669A JP WO2021112098 A1 JPWO2021112098 A1 JP WO2021112098A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
- H10F39/1865—Overflow drain structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019218336 | 2019-12-02 | ||
| PCT/JP2020/044739 WO2021112098A1 (ja) | 2019-12-02 | 2020-12-01 | 撮像装置およびその製造方法、電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021112098A1 true JPWO2021112098A1 (https=) | 2021-06-10 |
Family
ID=76221680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021562669A Pending JPWO2021112098A1 (https=) | 2019-12-02 | 2020-12-01 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12317623B2 (https=) |
| EP (1) | EP4071817A4 (https=) |
| JP (1) | JPWO2021112098A1 (https=) |
| CN (1) | CN114730777B (https=) |
| TW (1) | TWI865665B (https=) |
| WO (1) | WO2021112098A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023022718A (ja) * | 2021-08-03 | 2023-02-15 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及びその製造方法、電子機器 |
| US20250123144A1 (en) * | 2021-08-16 | 2025-04-17 | Sony Semiconductor Solutions Corporation | Light detection apparatus and method of manufacturing the same |
| JP2023064967A (ja) * | 2021-10-27 | 2023-05-12 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| WO2023112465A1 (ja) * | 2021-12-13 | 2023-06-22 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子及び電子機器 |
| WO2023166884A1 (ja) * | 2022-03-03 | 2023-09-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及びその製造方法 |
| JP2025016041A (ja) * | 2023-07-21 | 2025-01-31 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| WO2025142948A1 (ja) * | 2023-12-25 | 2025-07-03 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013098446A (ja) * | 2011-11-04 | 2013-05-20 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、及び、電子機器 |
| JP2014096490A (ja) * | 2012-11-09 | 2014-05-22 | Sony Corp | 撮像素子、製造方法 |
| JP2015053411A (ja) * | 2013-09-09 | 2015-03-19 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
| WO2016136486A1 (ja) * | 2015-02-27 | 2016-09-01 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| WO2017057397A1 (ja) * | 2015-09-30 | 2017-04-06 | 株式会社ニコン | 撮像素子および電子カメラ |
| US20170203954A1 (en) * | 2016-01-19 | 2017-07-20 | Rosemount Aerospace Inc. | Mems pressure sensor with modified cavity to improve burst pressure |
| JP2017168566A (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | 固体撮像素子、および電子機器 |
| WO2017183477A1 (ja) * | 2016-04-22 | 2017-10-26 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
| JP2018093126A (ja) * | 2016-12-07 | 2018-06-14 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、撮像素子および電子機器 |
| JP2018148039A (ja) * | 2017-03-06 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
| JP2019176089A (ja) * | 2018-03-29 | 2019-10-10 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
| WO2019240207A1 (ja) * | 2018-06-15 | 2019-12-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置およびその製造方法、電子機器 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8120130B2 (en) * | 2007-06-21 | 2012-02-21 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| JP2009004651A (ja) * | 2007-06-22 | 2009-01-08 | Panasonic Corp | 固体撮像装置およびその製造方法 |
| JP5365144B2 (ja) | 2008-11-06 | 2013-12-11 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP5794068B2 (ja) * | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| US9293722B2 (en) * | 2012-05-01 | 2016-03-22 | Sony Corporation | Solid-state image pickup device, method of manufacturing the same, and electronic apparatus |
| US9356061B2 (en) | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
| US20160194260A1 (en) * | 2013-08-14 | 2016-07-07 | Holmen Ab | Method for production of p-cymene |
| KR102154184B1 (ko) * | 2014-03-10 | 2020-09-09 | 삼성전자 주식회사 | 이미지 센서 및 이를 제조하는 방법 |
| JP6595750B2 (ja) * | 2014-03-14 | 2019-10-23 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP6526424B2 (ja) * | 2015-01-23 | 2019-06-05 | 矢崎総業株式会社 | 基板付きコネクタ |
| JP6052353B2 (ja) * | 2015-07-31 | 2016-12-27 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| KR102476411B1 (ko) * | 2016-12-01 | 2022-12-12 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자, 고체 촬상 소자의 제조 방법 및 촬상 장치 |
| JP2018200955A (ja) * | 2017-05-26 | 2018-12-20 | キヤノン株式会社 | 撮像装置、撮像システム、および、移動体 |
| JP7032902B2 (ja) * | 2017-10-05 | 2022-03-09 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
| JP2020047616A (ja) | 2018-09-14 | 2020-03-26 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| JP7175159B2 (ja) | 2018-11-05 | 2022-11-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および製造方法、並びに電子機器 |
| JP7605732B2 (ja) | 2019-03-25 | 2024-12-24 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および電子機器 |
-
2020
- 2020-11-25 TW TW109141250A patent/TWI865665B/zh active
- 2020-12-01 JP JP2021562669A patent/JPWO2021112098A1/ja active Pending
- 2020-12-01 WO PCT/JP2020/044739 patent/WO2021112098A1/ja not_active Ceased
- 2020-12-01 EP EP20895193.9A patent/EP4071817A4/en active Pending
- 2020-12-01 US US17/756,358 patent/US12317623B2/en active Active
- 2020-12-01 CN CN202080076029.1A patent/CN114730777B/zh active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013098446A (ja) * | 2011-11-04 | 2013-05-20 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、及び、電子機器 |
| JP2014096490A (ja) * | 2012-11-09 | 2014-05-22 | Sony Corp | 撮像素子、製造方法 |
| JP2015053411A (ja) * | 2013-09-09 | 2015-03-19 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
| WO2016136486A1 (ja) * | 2015-02-27 | 2016-09-01 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| WO2017057397A1 (ja) * | 2015-09-30 | 2017-04-06 | 株式会社ニコン | 撮像素子および電子カメラ |
| US20170203954A1 (en) * | 2016-01-19 | 2017-07-20 | Rosemount Aerospace Inc. | Mems pressure sensor with modified cavity to improve burst pressure |
| JP2017168566A (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | 固体撮像素子、および電子機器 |
| WO2017183477A1 (ja) * | 2016-04-22 | 2017-10-26 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
| JP2018093126A (ja) * | 2016-12-07 | 2018-06-14 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、撮像素子および電子機器 |
| JP2018148039A (ja) * | 2017-03-06 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
| JP2019176089A (ja) * | 2018-03-29 | 2019-10-10 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
| WO2019240207A1 (ja) * | 2018-06-15 | 2019-12-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置およびその製造方法、電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021112098A1 (ja) | 2021-06-10 |
| US20230005978A1 (en) | 2023-01-05 |
| TWI865665B (zh) | 2024-12-11 |
| EP4071817A4 (en) | 2023-01-04 |
| CN114730777A (zh) | 2022-07-08 |
| CN114730777B (zh) | 2025-06-13 |
| EP4071817A1 (en) | 2022-10-12 |
| US12317623B2 (en) | 2025-05-27 |
| TW202133410A (zh) | 2021-09-01 |
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