JPWO2021075529A1 - - Google Patents

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Publication number
JPWO2021075529A1
JPWO2021075529A1 JP2020560513A JP2020560513A JPWO2021075529A1 JP WO2021075529 A1 JPWO2021075529 A1 JP WO2021075529A1 JP 2020560513 A JP2020560513 A JP 2020560513A JP 2020560513 A JP2020560513 A JP 2020560513A JP WO2021075529 A1 JPWO2021075529 A1 JP WO2021075529A1
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JP
Japan
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JP2020560513A
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JP7313607B2 (ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/129—Diode type sensors, e.g. gas sensitive Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G01N21/43—Refractivity; Phase-affecting properties, e.g. optical path length by measuring critical angle
    • G01N2021/434—Dipping block in contact with sample, e.g. prism
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2020560513A 2019-10-18 2020-10-16 電気測定型表面プラズモン共鳴センサ、電気測定型表面プラズモン共鳴センサチップ、及び表面プラズモン共鳴変化の検出方法 Active JP7313607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019191210 2019-10-18
JP2019191210 2019-10-18
PCT/JP2020/039026 WO2021075529A1 (ja) 2019-10-18 2020-10-16 電気測定型表面プラズモン共鳴センサ、電気測定型表面プラズモン共鳴センサチップ、及び表面プラズモン共鳴変化の検出方法

Publications (2)

Publication Number Publication Date
JPWO2021075529A1 true JPWO2021075529A1 (ja) 2021-04-22
JP7313607B2 JP7313607B2 (ja) 2023-07-25

Family

ID=75537428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020560513A Active JP7313607B2 (ja) 2019-10-18 2020-10-16 電気測定型表面プラズモン共鳴センサ、電気測定型表面プラズモン共鳴センサチップ、及び表面プラズモン共鳴変化の検出方法

Country Status (5)

Country Link
US (1) US20210396663A1 (ja)
EP (1) EP4047668A4 (ja)
JP (1) JP7313607B2 (ja)
CN (1) CN113167727A (ja)
WO (1) WO2021075529A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7313607B2 (ja) * 2019-10-18 2023-07-25 株式会社アイシン 電気測定型表面プラズモン共鳴センサ、電気測定型表面プラズモン共鳴センサチップ、及び表面プラズモン共鳴変化の検出方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155617A (en) * 1991-06-13 1992-10-13 The Board Of Trustees Of The Leland Stanford Junior University Electro-optic attenuated total internal reflection modulator and method
JPH08264821A (ja) * 1995-03-27 1996-10-11 Agency Of Ind Science & Technol 光電変換方法および光電変換素子
WO2008075542A1 (ja) * 2006-12-20 2008-06-26 Nec Corporation フォトダイオード、光通信デバイスおよび光インタコネクションモジュール
WO2019031591A1 (ja) * 2017-08-10 2019-02-14 イムラ・ジャパン株式会社 電気測定型表面プラズモン共鳴センサ及びそれに用いる電気測定型表面プラズモン共鳴センサチップ

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US5633492A (en) * 1995-04-17 1997-05-27 Ceram Optec Industries, Inc. Real time monitoring of changes in objects or media
US5591407A (en) * 1995-04-21 1997-01-07 American Research Corporation Of Virginia Laser diode sensor
JP3452837B2 (ja) 1999-06-14 2003-10-06 理化学研究所 局在プラズモン共鳴センサー
JP2001194295A (ja) * 2000-01-11 2001-07-19 Ntt Advanced Technology Corp 表面プラズモン共鳴測定用金属薄膜一体型フローセル及びその製造方法
KR20030047567A (ko) * 2001-12-11 2003-06-18 한국전자통신연구원 표면 플라즈몬 공명 센서 시스템
JP4076962B2 (ja) * 2003-04-23 2008-04-16 独立行政法人科学技術振興機構 差動式表面プラズモン共鳴現象測定装置及びその測定方法
CN1777801A (zh) * 2003-04-23 2006-05-24 独立行政法人科学技术振兴机构 差动式表面等离子体激元共振现象测定装置及其测定方法
JPWO2005078415A1 (ja) * 2004-02-13 2007-10-18 オムロン株式会社 表面プラズモン共鳴センサー
KR100876608B1 (ko) * 2007-08-20 2008-12-31 한국생명공학연구원 회전거울을 이용한 표면 플라즈몬 공명 센서
WO2009070665A1 (en) * 2007-11-27 2009-06-04 Massachusetts Institute Of Technology Near field detector for integrated surface plasmon resonance biosensor applications
JP5589656B2 (ja) 2009-12-11 2014-09-17 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
JP2012038541A (ja) 2010-08-06 2012-02-23 Asahi Glass Co Ltd プラズモン共鳴型光電変換素子の製造方法、およびプラズモン共鳴型光電変換素子
CN102042972B (zh) * 2010-10-29 2013-01-16 清华大学 用于生物分子相互作用实时检测的干涉成像方法及其系统
CN102183507B (zh) * 2011-03-01 2012-11-21 吉林大学 一种长程表面等离子体激励表面增强拉曼散射的方法
US8358419B2 (en) * 2011-04-05 2013-01-22 Integrated Plasmonics Corporation Integrated plasmonic sensing device and apparatus
CN103946986A (zh) * 2011-11-14 2014-07-23 太平洋银泰格拉泰德能源公司 用于电磁能量收集的设备、系统和方法
US10444179B2 (en) * 2016-08-10 2019-10-15 Multerra Bio, Inc. Apparatuses and methods for detecting molecules and binding energy
US20210190772A1 (en) * 2017-01-23 2021-06-24 University Of Louisville Research Foundation, Inc. Electrically-modulated surface waves and an electrode interface comprising a metallic bilayer
JP6928931B2 (ja) 2017-05-08 2021-09-01 国立大学法人電気通信大学 計測用デバイス及び計測センサ
US20190056389A1 (en) * 2017-08-15 2019-02-21 Aykutlu Dana System and method for determining the presence or absence of adsorbed biomolecules or biomolecular structures on a surface
JP7172693B2 (ja) * 2019-02-12 2022-11-16 株式会社アイシン 電気測定型表面プラズモン共鳴センサ、電気測定型表面プラズモン共鳴センサチップ、及び表面プラズモンポラリトン変化検出方法
JP7313607B2 (ja) * 2019-10-18 2023-07-25 株式会社アイシン 電気測定型表面プラズモン共鳴センサ、電気測定型表面プラズモン共鳴センサチップ、及び表面プラズモン共鳴変化の検出方法
CN112014358B (zh) * 2020-08-31 2024-01-23 南京师范大学 一种双程表面等离子共振的光学薄膜气体传感器及其制法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155617A (en) * 1991-06-13 1992-10-13 The Board Of Trustees Of The Leland Stanford Junior University Electro-optic attenuated total internal reflection modulator and method
JPH08264821A (ja) * 1995-03-27 1996-10-11 Agency Of Ind Science & Technol 光電変換方法および光電変換素子
WO2008075542A1 (ja) * 2006-12-20 2008-06-26 Nec Corporation フォトダイオード、光通信デバイスおよび光インタコネクションモジュール
WO2019031591A1 (ja) * 2017-08-10 2019-02-14 イムラ・ジャパン株式会社 電気測定型表面プラズモン共鳴センサ及びそれに用いる電気測定型表面プラズモン共鳴センサチップ

Also Published As

Publication number Publication date
WO2021075529A1 (ja) 2021-04-22
CN113167727A (zh) 2021-07-23
EP4047668A1 (en) 2022-08-24
JP7313607B2 (ja) 2023-07-25
EP4047668A4 (en) 2023-12-06
US20210396663A1 (en) 2021-12-23

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