JPWO2021060513A1 - - Google Patents

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Publication number
JPWO2021060513A1
JPWO2021060513A1 JP2021548451A JP2021548451A JPWO2021060513A1 JP WO2021060513 A1 JPWO2021060513 A1 JP WO2021060513A1 JP 2021548451 A JP2021548451 A JP 2021548451A JP 2021548451 A JP2021548451 A JP 2021548451A JP WO2021060513 A1 JPWO2021060513 A1 JP WO2021060513A1
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JP
Japan
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JP2021548451A
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JP7103528B2 (ja
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
    • H03H9/02622—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves of the surface, including back surface
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2021548451A 2019-09-27 2020-09-25 弾性波装置 Active JP7103528B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019178097 2019-09-27
JP2019178097 2019-09-27
PCT/JP2020/036401 WO2021060513A1 (ja) 2019-09-27 2020-09-25 弾性波装置

Publications (2)

Publication Number Publication Date
JPWO2021060513A1 true JPWO2021060513A1 (ja) 2021-04-01
JP7103528B2 JP7103528B2 (ja) 2022-07-20

Family

ID=75166248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021548451A Active JP7103528B2 (ja) 2019-09-27 2020-09-25 弾性波装置

Country Status (5)

Country Link
US (1) US11621688B2 (ja)
JP (1) JP7103528B2 (ja)
KR (1) KR102479702B1 (ja)
CN (1) CN114467258A (ja)
WO (1) WO2021060513A1 (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020116528A1 (ja) * 2018-12-06 2020-06-11 株式会社村田製作所 弾性波装置
WO2022075138A1 (ja) * 2020-10-06 2022-04-14 株式会社村田製作所 弾性波装置
CN117178480A (zh) * 2021-04-21 2023-12-05 株式会社村田制作所 弹性波装置及弹性波装置的制造方法
WO2022255304A1 (ja) * 2021-06-01 2022-12-08 株式会社村田製作所 圧電バルク波装置及びその製造方法
WO2022265071A1 (ja) * 2021-06-17 2022-12-22 株式会社村田製作所 弾性波装置
CN117652098A (zh) * 2021-07-08 2024-03-05 株式会社村田制作所 弹性波装置
WO2023286605A1 (ja) * 2021-07-13 2023-01-19 株式会社村田製作所 弾性波装置
WO2023002822A1 (ja) * 2021-07-20 2023-01-26 株式会社村田製作所 弾性波装置及びその製造方法
WO2023002824A1 (ja) * 2021-07-20 2023-01-26 株式会社村田製作所 弾性波装置
WO2023002790A1 (ja) * 2021-07-21 2023-01-26 株式会社村田製作所 弾性波装置
WO2023013694A1 (ja) * 2021-08-03 2023-02-09 株式会社村田製作所 弾性波装置及び弾性波装置の製造方法
WO2023017780A1 (ja) * 2021-08-11 2023-02-16 株式会社村田製作所 弾性波装置
WO2023048256A1 (ja) * 2021-09-27 2023-03-30 株式会社村田製作所 弾性波装置
WO2023090434A1 (ja) * 2021-11-19 2023-05-25 株式会社村田製作所 弾性波装置
WO2023100608A1 (ja) * 2021-12-01 2023-06-08 株式会社村田製作所 弾性波装置
WO2023136293A1 (ja) * 2022-01-13 2023-07-20 株式会社村田製作所 弾性波装置
WO2023136294A1 (ja) * 2022-01-14 2023-07-20 株式会社村田製作所 弾性波装置
WO2023140272A1 (ja) * 2022-01-19 2023-07-27 株式会社村田製作所 弾性波装置
WO2023140354A1 (ja) * 2022-01-21 2023-07-27 株式会社村田製作所 弾性波装置及びフィルタ装置
WO2023157958A1 (ja) * 2022-02-18 2023-08-24 株式会社村田製作所 弾性波装置及び弾性波装置の製造方法
WO2023167316A1 (ja) * 2022-03-04 2023-09-07 株式会社村田製作所 弾性波装置
WO2023190610A1 (ja) * 2022-03-28 2023-10-05 株式会社村田製作所 弾性波装置
WO2023190656A1 (ja) * 2022-03-29 2023-10-05 株式会社村田製作所 弾性波装置
WO2023190700A1 (ja) * 2022-03-31 2023-10-05 株式会社村田製作所 弾性波装置
WO2023195523A1 (ja) * 2022-04-08 2023-10-12 株式会社村田製作所 弾性波装置
WO2023210764A1 (ja) * 2022-04-28 2023-11-02 株式会社村田製作所 弾性波素子および弾性波装置
WO2023219167A1 (ja) * 2022-05-13 2023-11-16 株式会社村田製作所 弾性波装置
WO2024029610A1 (ja) * 2022-08-03 2024-02-08 株式会社村田製作所 弾性波装置
WO2024043299A1 (ja) * 2022-08-25 2024-02-29 株式会社村田製作所 弾性波装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013528996A (ja) * 2010-04-23 2013-07-11 テクノロジアン テュトキムスケスクス ヴェーテーテー 広帯域音響結合薄膜ｂａｗフィルタ
WO2016098526A1 (ja) * 2014-12-18 2016-06-23 株式会社村田製作所 弾性波装置及びその製造方法
US20170085247A1 (en) * 2015-08-25 2017-03-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (saw) resonator
JP2018534863A (ja) * 2015-10-20 2018-11-22 ソイテック ハイブリッド構造を製造するための方法
JP2019062441A (ja) * 2017-09-27 2019-04-18 株式会社村田製作所 弾性波装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005050837A1 (ja) * 2003-11-21 2005-06-02 Matsushita Electric Industrial Co., Ltd. 弾性表面波フィルタ
JP5179530B2 (ja) * 2009-03-03 2013-04-10 日本電波工業株式会社 弾性波デバイス及び電子部品
CN103718457B (zh) * 2011-07-29 2017-05-24 株式会社村田制作所 压电器件及压电器件的制造方法
CN105794108B (zh) 2013-12-27 2019-01-11 株式会社村田制作所 弹性波装置
FR3053532B1 (fr) 2016-06-30 2018-11-16 Soitec Structure hybride pour dispositif a ondes acoustiques de surface

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013528996A (ja) * 2010-04-23 2013-07-11 テクノロジアン テュトキムスケスクス ヴェーテーテー 広帯域音響結合薄膜ｂａｗフィルタ
WO2016098526A1 (ja) * 2014-12-18 2016-06-23 株式会社村田製作所 弾性波装置及びその製造方法
US20170085247A1 (en) * 2015-08-25 2017-03-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (saw) resonator
JP2018534863A (ja) * 2015-10-20 2018-11-22 ソイテック ハイブリッド構造を製造するための方法
JP2019062441A (ja) * 2017-09-27 2019-04-18 株式会社村田製作所 弾性波装置

Also Published As

Publication number Publication date
WO2021060513A1 (ja) 2021-04-01
US11621688B2 (en) 2023-04-04
JP7103528B2 (ja) 2022-07-20
KR102479702B1 (ko) 2022-12-21
CN114467258A (zh) 2022-05-10
US20220216844A1 (en) 2022-07-07
KR20220044383A (ko) 2022-04-07

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