JPWO2021060253A1 - - Google Patents

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Publication number
JPWO2021060253A1
JPWO2021060253A1 JP2021548918A JP2021548918A JPWO2021060253A1 JP WO2021060253 A1 JPWO2021060253 A1 JP WO2021060253A1 JP 2021548918 A JP2021548918 A JP 2021548918A JP 2021548918 A JP2021548918 A JP 2021548918A JP WO2021060253 A1 JPWO2021060253 A1 JP WO2021060253A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021548918A
Other languages
Japanese (ja)
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JP7746160B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2021060253A1 publication Critical patent/JPWO2021060253A1/ja
Priority to JP2024041943A priority Critical patent/JP2024075660A/ja
Application granted granted Critical
Publication of JP7746160B2 publication Critical patent/JP7746160B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2021548918A 2019-09-26 2020-09-23 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 Active JP7746160B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024041943A JP2024075660A (ja) 2019-09-26 2024-03-18 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019175851 2019-09-26
JP2019175851 2019-09-26
PCT/JP2020/035728 WO2021060253A1 (ja) 2019-09-26 2020-09-23 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024041943A Division JP2024075660A (ja) 2019-09-26 2024-03-18 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021060253A1 true JPWO2021060253A1 (https=) 2021-04-01
JP7746160B2 JP7746160B2 (ja) 2025-09-30

Family

ID=75166148

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021548918A Active JP7746160B2 (ja) 2019-09-26 2020-09-23 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2024041943A Pending JP2024075660A (ja) 2019-09-26 2024-03-18 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024041943A Pending JP2024075660A (ja) 2019-09-26 2024-03-18 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Country Status (6)

Country Link
US (2) US12346017B2 (https=)
JP (2) JP7746160B2 (https=)
KR (1) KR20220065763A (https=)
CN (1) CN114424119A (https=)
TW (2) TWI877228B (https=)
WO (1) WO2021060253A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI811037B (zh) 2016-07-27 2023-08-01 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
TWI877228B (zh) * 2019-09-26 2025-03-21 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
TW202141165A (zh) 2020-03-27 2021-11-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TW202202641A (zh) 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料
US20220350233A1 (en) * 2021-05-03 2022-11-03 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
KR102923170B1 (ko) * 2023-03-20 2026-02-06 주식회사 에프에스티 극자외선 리소그라피용 펠리클 및 그 제조방법
TW202532955A (zh) * 2023-12-27 2025-08-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004333711A (ja) * 2003-05-02 2004-11-25 Hoya Corp 反射型マスクブランクスの製造方法及び反射型マスクの製造方法並びに反射多層膜付き基板の製造方法。
JP2006013280A (ja) * 2004-06-29 2006-01-12 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2008101916A (ja) * 2006-10-17 2008-05-01 Canon Inc 多層膜光学素子
JP2010280931A (ja) * 2009-06-03 2010-12-16 Canon Inc 多層膜成膜方法
JP2013122952A (ja) * 2011-12-09 2013-06-20 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板の製造方法
JP2016514279A (ja) * 2013-02-15 2016-05-19 エーエスエムエル ネザーランズ ビー．ブイ． 放射源コレクタ及び製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0797159B2 (ja) 1986-10-01 1995-10-18 キヤノン株式会社 軟ｘ線・真空紫外線用多層膜反射鏡
US5310603A (en) 1986-10-01 1994-05-10 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
US5433988A (en) 1986-10-01 1995-07-18 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
JPH0816720B2 (ja) 1992-04-21 1996-02-21 日本航空電子工業株式会社 軟ｘ線多層膜反射鏡
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
KR101485754B1 (ko) * 2008-09-26 2015-01-26 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용하여 제조되는 포토마스크
JP5317310B2 (ja) * 2009-03-31 2013-10-16 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP5662123B2 (ja) * 2010-02-02 2015-01-28 株式会社日立ハイテクサイエンス Ｅｕｖマスク修正装置および方法
JP2012212787A (ja) * 2011-03-31 2012-11-01 Dainippon Printing Co Ltd 反射型マスクの製造方法、反射型マスク用イオンビーム装置、および反射型マスク
TWI563337B (en) 2011-08-25 2016-12-21 Toppan Printing Co Ltd Reflection type mask and method for manufacturing the same
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP2014229825A (ja) * 2013-05-24 2014-12-08 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法および、該マスクブランク用の反射層付基板の製造方法
KR101877896B1 (ko) * 2013-09-27 2018-07-12 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
NL2017602A (en) * 2015-11-02 2017-05-23 Stichting Voor Fundamenteel Onderzoek Der Materie Multilayer Reflector, Method of Manufacturing a Multilayer Reflector and Lithographic Apparatus
SG11201911415VA (en) * 2017-06-21 2020-01-30 Hoya Corp Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP7097159B2 (ja) 2017-07-03 2022-07-07 高砂熱学工業株式会社 登録プログラム、携帯端末及び登録方法
US11067886B2 (en) 2017-07-05 2021-07-20 Toppan Printing Co., Ltd. Reflective photomask blank and reflective photomask
JP7006078B2 (ja) * 2017-08-10 2022-01-24 Ａｇｃ株式会社 反射型マスクブランク、および反射型マスク
JP6904234B2 (ja) 2017-12-15 2021-07-14 Ａｇｃ株式会社 マスクブランク用基板およびマスクブランク
JP7401356B2 (ja) * 2019-03-27 2023-12-19 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
TWI877228B (zh) * 2019-09-26 2025-03-21 日商Ｈｏｙａ股份有限公司 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
JP6931729B1 (ja) * 2020-03-27 2021-09-08 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004333711A (ja) * 2003-05-02 2004-11-25 Hoya Corp 反射型マスクブランクスの製造方法及び反射型マスクの製造方法並びに反射多層膜付き基板の製造方法。
JP2006013280A (ja) * 2004-06-29 2006-01-12 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2008101916A (ja) * 2006-10-17 2008-05-01 Canon Inc 多層膜光学素子
JP2010280931A (ja) * 2009-06-03 2010-12-16 Canon Inc 多層膜成膜方法
JP2013122952A (ja) * 2011-12-09 2013-06-20 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板の製造方法
JP2016514279A (ja) * 2013-02-15 2016-05-19 エーエスエムエル ネザーランズ ビー．ブイ． 放射源コレクタ及び製造方法

Also Published As

Publication number Publication date
TWI877228B (zh) 2025-03-21
WO2021060253A1 (ja) 2021-04-01
CN114424119A (zh) 2022-04-29
TWI912142B (zh) 2026-01-11
KR20220065763A (ko) 2022-05-20
US20250284189A1 (en) 2025-09-11
US20220342293A1 (en) 2022-10-27
JP7746160B2 (ja) 2025-09-30
TW202117439A (zh) 2021-05-01
US12346017B2 (en) 2025-07-01
JP2024075660A (ja) 2024-06-04
TW202522117A (zh) 2025-06-01

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