JPWO2021019877A1 - 電子部品装置を製造する方法 - Google Patents
電子部品装置を製造する方法 Download PDFInfo
- Publication number
- JPWO2021019877A1 JPWO2021019877A1 JP2020573064A JP2020573064A JPWO2021019877A1 JP WO2021019877 A1 JPWO2021019877 A1 JP WO2021019877A1 JP 2020573064 A JP2020573064 A JP 2020573064A JP 2020573064 A JP2020573064 A JP 2020573064A JP WO2021019877 A1 JPWO2021019877 A1 JP WO2021019877A1
- Authority
- JP
- Japan
- Prior art keywords
- rewiring
- sealing structure
- sealing
- adhesive layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000007789 sealing Methods 0.000 claims abstract description 131
- 239000012790 adhesive layer Substances 0.000 claims abstract description 97
- 239000010410 layer Substances 0.000 claims abstract description 91
- 239000000463 material Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 27
- 238000002844 melting Methods 0.000 claims description 23
- 230000008018 melting Effects 0.000 claims description 23
- 239000002131 composite material Substances 0.000 claims description 14
- 238000002788 crimping Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 239000002923 metal particle Substances 0.000 description 29
- 239000004020 conductor Substances 0.000 description 26
- 239000002243 precursor Substances 0.000 description 25
- 229920005989 resin Polymers 0.000 description 21
- 239000011347 resin Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 19
- 239000007791 liquid phase Substances 0.000 description 17
- 239000000945 filler Substances 0.000 description 14
- 239000002904 solvent Substances 0.000 description 13
- -1 azo compound Chemical class 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 229920005992 thermoplastic resin Polymers 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000003822 epoxy resin Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000005245 sintering Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 229920001187 thermosetting polymer Polymers 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000002313 adhesive film Substances 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- MHVJRKBZMUDEEV-UHFFFAOYSA-N (-)-ent-pimara-8(14),15-dien-19-oic acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(C=C)(C)C=C1CC2 MHVJRKBZMUDEEV-UHFFFAOYSA-N 0.000 description 2
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- MXYATHGRPJZBNA-KRFUXDQASA-N isopimaric acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@@](C=C)(C)CC2=CC1 MXYATHGRPJZBNA-KRFUXDQASA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- MHVJRKBZMUDEEV-APQLOABGSA-N (+)-Pimaric acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@](C=C)(C)C=C2CC1 MHVJRKBZMUDEEV-APQLOABGSA-N 0.000 description 1
- YPGLTKHJEQHKSS-ASZLNGMRSA-N (1r,4ar,4bs,7r,8as,10ar)-1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,7,8,8a,9,10,10a-dodecahydrophenanthrene-1-carboxylic acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@@H](C(C)C)C[C@@H]2CC1 YPGLTKHJEQHKSS-ASZLNGMRSA-N 0.000 description 1
- CPUBMKFFRRFXIP-YPAXQUSRSA-N (9z,33z)-dotetraconta-9,33-dienediamide Chemical compound NC(=O)CCCCCCC\C=C/CCCCCCCCCCCCCCCCCCCCCC\C=C/CCCCCCCC(N)=O CPUBMKFFRRFXIP-YPAXQUSRSA-N 0.000 description 1
- LAVARTIQQDZFNT-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-yl acetate Chemical compound COCC(C)OCC(C)OC(C)=O LAVARTIQQDZFNT-UHFFFAOYSA-N 0.000 description 1
- BNHGVULTSGNVIX-UHFFFAOYSA-N 1-(2-ethoxyethoxy)ethanol Chemical compound CCOCCOC(C)O BNHGVULTSGNVIX-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 1
- 229940114072 12-hydroxystearic acid Drugs 0.000 description 1
- WCOXQTXVACYMLM-UHFFFAOYSA-N 2,3-bis(12-hydroxyoctadecanoyloxy)propyl 12-hydroxyoctadecanoate Chemical compound CCCCCCC(O)CCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCC(O)CCCCCC)COC(=O)CCCCCCCCCCC(O)CCCCCC WCOXQTXVACYMLM-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- JINGUCXQUOKWKH-UHFFFAOYSA-N 2-aminodecanoic acid Chemical compound CCCCCCCCC(N)C(O)=O JINGUCXQUOKWKH-UHFFFAOYSA-N 0.000 description 1
- WBJWXIQDBDZMAW-UHFFFAOYSA-N 2-hydroxynaphthalene-1-carbonyl chloride Chemical compound C1=CC=CC2=C(C(Cl)=O)C(O)=CC=C21 WBJWXIQDBDZMAW-UHFFFAOYSA-N 0.000 description 1
- ORVCATCRRUXRCE-UHFFFAOYSA-N 2-iodooxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1OI ORVCATCRRUXRCE-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 description 1
- NVWSLNRSPZAQOK-UHFFFAOYSA-N 3,4-dibromo-2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(Br)C(Br)=C1O NVWSLNRSPZAQOK-UHFFFAOYSA-N 0.000 description 1
- UZZYXZWSOWQPIS-UHFFFAOYSA-N 3-fluoro-5-(trifluoromethyl)benzaldehyde Chemical compound FC1=CC(C=O)=CC(C(F)(F)F)=C1 UZZYXZWSOWQPIS-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- MXYATHGRPJZBNA-UHFFFAOYSA-N 4-epi-isopimaric acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(C=C)(C)CC1=CC2 MXYATHGRPJZBNA-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 1
- QUUCYKKMFLJLFS-UHFFFAOYSA-N Dehydroabietan Natural products CC1(C)CCCC2(C)C3=CC=C(C(C)C)C=C3CCC21 QUUCYKKMFLJLFS-UHFFFAOYSA-N 0.000 description 1
- NFWKVWVWBFBAOV-UHFFFAOYSA-N Dehydroabietic acid Natural products OC(=O)C1(C)CCCC2(C)C3=CC=C(C(C)C)C=C3CCC21 NFWKVWVWBFBAOV-UHFFFAOYSA-N 0.000 description 1
- QCXXDZUWBAHYPA-UHFFFAOYSA-N OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.O=C1NC(=O)NC(=O)N1 Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.O=C1NC(=O)NC(=O)N1 QCXXDZUWBAHYPA-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004693 Polybenzimidazole Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- PYHXGXCGESYPCW-UHFFFAOYSA-N alpha-phenylbenzeneacetic acid Natural products C=1C=CC=CC=1C(C(=O)O)C1=CC=CC=C1 PYHXGXCGESYPCW-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000009193 crawling Effects 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- NFWKVWVWBFBAOV-MISYRCLQSA-N dehydroabietic acid Chemical compound OC(=O)[C@]1(C)CCC[C@]2(C)C3=CC=C(C(C)C)C=C3CC[C@H]21 NFWKVWVWBFBAOV-MISYRCLQSA-N 0.000 description 1
- 229940118781 dehydroabietic acid Drugs 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- ZJOLCKGSXLIVAA-UHFFFAOYSA-N ethene;octadecanamide Chemical compound C=C.CCCCCCCCCCCCCCCCCC(N)=O.CCCCCCCCCCCCCCCCCC(N)=O ZJOLCKGSXLIVAA-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 235000013773 glyceryl triacetate Nutrition 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000012258 stirred mixture Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- URAYPUMNDPQOKB-UHFFFAOYSA-N triacetin Chemical compound CC(=O)OCC(OC(C)=O)COC(C)=O URAYPUMNDPQOKB-UHFFFAOYSA-N 0.000 description 1
- 229960002622 triacetin Drugs 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Wire Bonding (AREA)
Abstract
Description
60質量部のエトキシ化イソシアヌル酸トリアクリレート(新中村化学工業株式会社製、A−9300)、15質量部のシリカフィラー(株式会社アドマテックス製、SE2050、平均粒径:0.5μm)、エポキシシランで表面処理された15質量部のシリカフィラー(株式会社アドマテックス製、SE2050SEJ、平均粒径:0.5μm)、30質量部のメタクリル表面処理ナノシリカフィラー(株式会社アドマテックス製、YA050CSM、平均粒径:約50nm)、及び10質量部の樹脂フィラー(ロームアンドハースジャパン(株)製、EXL−2655:コアシェルタイプ有機微粒子)を、溶媒としてのメチルエチルケトンに加え、溶媒以外の成分の合計濃度が60質量%である混合液を得た。この混合液を、ビーズを加えてからビーズミル(フリッチュ・ジャパン株式会社製、遊星型微粉砕機P−7)で30分撹拌した。その後、混合液に60質量部のフェノキシ樹脂(東都化成株式会社製、ZX1356、Tg:約71℃、重量平均分子量:約63000))を加え、再度、混合液をビーズミルで30分撹拌した。続いて、2質量部のジクミル過酸化物(日油株式会社製、パークミルD)を加えてから混合液を更に撹拌した。撹拌後の混合液からビーズをろ過によって除去して、ワニスを得た。得られたワニスを支持フィルムに塗工し、塗膜を乾燥して、厚さ20μmの接着剤フィルムを形成させた。
支持体としてのガラス板と、ガラス板上に形成された仮固定材層(剥離層)とを有するキャリア基材(三井金属鉱業株式会社製「HRDP」、幅12インチ、厚さ1.1mm)を準備した。このキャリア基材の仮固定材層上に、感光性樹脂フィルム(日立化成株式会社製「RD1215」、厚さ15μm)をラミネートし、これを所定のパターンで露光し、現像することにより、受動部品及び半導体チップの位置合わせ用のアライメントマークを形成した。次いで、仮固定材層上に上述の接着剤フィルムをラミネートすることにより、接着層を形成した。接着層上に導電性ペースト(日立化成株式会社製「SP−1000」)を印刷することにより、厚さ60μm受動部品搭載用の接続部の前駆体としてパッドを形成させた。パッド上に、受動部品として、W0.4mm×D0.2mm×H0.13mmのサイズを有する0Ω抵抗部品(パナソニック株式会社製「ERJXGN0R00Y」、)及びW0.6mm×D0.3mm×H0.23mmのサイズを有する0Ω抵抗部品(パナソニック株式会社製「ERJ1GN0R00C」)を搭載した。次に、W7.3mm×D7.3mm×H0.2mmのサイズを有し、接続部として高さ40μmの銅バンプを有するチップ部品(株式会社ウォルツ製「CC80」)256個を接着層上の所定の位置に配置した。得られた構造体を、接着層の硬化のためオーブン中で175℃で2時間加熱し、続いて導電性ペーストの硬化による接続部の形成のため最高温度265℃のリフーロ炉で加熱した。続いて、接着層上の受動部品及びチップ部品を封止する厚さ0.5mmの封止層を、固形の封止材(日立化成株式会社製「CEL−400ZHF40−F1G」)を用いたコンプレッションモールドにより形成した。キャリア基材を接着層から剥離し、接着層を、受動部品及び半導体チップの接続部が露出する回路面が形成されるまで研削して、封止構造体を得た。得られた封止構造体におけるダイシフト量(搭載位置の設計値からのずれ)は、チップ部品256個の平均で、X方向に2.7μm、Y方向に1.6μmであった。
封止構造体の作製に用いたものと同じキャリア基材の仮固定材層上に、感光性絶縁樹脂(日立化成株式会社「AH3000」)の露光及び現像による絶縁層の形成と、銅スパッタ及びめっきによる再配線の形成とを含む方法により、表層部に設けられた銅パッドを有する2層構成の再配線層を形成した。再配線層の銅パッドの上に、銅めっき(高さ10μm)、及びスズ―銀はんだめっき(高さ15μm)をこの順に形成することにより、バンプを形成した。
封止構造体の回路面に、絶縁性接着層(日立化成株式会社製「AK1220」)をラミネートした。封止構造体を、ダイシングソーにより絶縁性接着層とともに切断して、15.2mm×13.2mmのサイズを有する封止構造体を切り出した。これを、再配線構造体の所定の位置に、フリップチップボンダーによって温度120℃、加圧時間2秒の条件で予備的に接続した。その後、ラミネータを用いた300℃の加熱及び1.0MPaの加圧により、電子部品及び半導体チップの接続部と再配線構造体のバンプとを接合させた。厚さ0.05μmのチタン層、次いで厚さ2μmの銅層をスパッタによって形成することにより、封止構造体の封止層を覆うシールド膜を形成させた。最後に、封止構造体に接続された再配線構造体から、機械剥離によってキャリア基材を剥離して、封止構造体及び再配線構造体から構成される電子部品装置を得た。
Claims (15)
- 対向する2つの主面を有する封止層と前記封止層内に封止された電子部品と前記電子部品に接続された接続部とを備える封止構造体であって、前記接続部が前記封止層の一方の主面である回路面に露出している、封止構造体を準備する工程と、
対向する2つの主面を有する再配線部と前記再配線部の一方の主面上に設けられた複数のバンプとを備える再配線構造体であって、前記再配線部が前記複数のバンプに接続された再配線、及び絶縁層を含む、再配線構造体を準備する工程と、
前記封止構造体と前記再配線構造体とを、前記回路面と前記複数のバンプとが対向する向きで、絶縁性接着層を介在させながら、前記接続部と前記複数のバンプのうち少なくとも一部とが接続されるように接着し、それにより前記封止構造体と前記再配線構造体とを接続する工程と、
を備える、電子部品装置を製造する方法。 - 前記再配線構造体を準備する工程が、
支持体及び該支持体上に設けられた仮固定材層を有するキャリア基材を準備することと、
前記仮固定材層上に前記再配線部を形成することと、
前記再配線部の前記キャリア基材とは反対側の主面上に、前記再配線に接続された前記複数のバンプを形成することと、
を含み、
当該方法が、
前記封止構造体に接続された前記再配線構造体から前記キャリア基材を剥離する工程を更に備える、請求項1に記載の方法。 - 前記再配線構造体が前記封止構造体に接続されたときに、前記再配線部が前記封止構造体の端部よりも外側にはみ出す、請求項1又は2に記載の方法。
- 前記複数のバンプのうち一部が、前記再配線構造体が前記封止構造体に接続されたときに前記封止構造体の端部よりも外側にはみ出す部分の前記再配線部上に配置される、請求項3に記載の方法。
- 前記再配線構造体に接続された前記封止構造体の外表面のうち前記絶縁性接着層と接していない部分を覆う導電性のシールド膜を形成する工程を更に備える、請求項1〜4のいずれか一項に記載の方法。
- 前記再配線構造体に接続された前記封止構造体の外表面のうち前記絶縁性接着層と接していない部分と、前記再配線部の前記封止構造体側の主面のうち前記封止構造体の端部よりも外側にはみ出した部分とを覆う導電性のシールド膜を形成する工程を更に備え、
前記導電性のシールド膜が、前記封止構造体の端部よりも外側にはみ出した部分の前記再配線部上に配置された前記バンプと接続される、請求項4に記載の方法。 - 前記封止構造体を準備する工程が、
支持体、仮固定材層、及び硬化性の接着層を備え、これらがこの順に積層されている、複合キャリア基材を準備することと、
前記複合キャリア基材の前記接着層上に、前記電子部品を、前記接着層に接する前記接続部を前記接着層と前記電子部品との間に介在させながら配置することと、
前記接着層を硬化させることにより、前記電子部品を前記複合キャリア基材に対して固定することと、
前記電子部品を封止する前記封止層を前記接着層上に形成することと、
前記封止層を硬化させることと、
前記仮固定材層を前記接着層から剥離することにより、前記接着層、前記電子部品及び前記封止層を有する封止構造体を得ることと、
前記封止構造体を前記接着層側から研削することにより、前記接続部が露出した前記回路面を形成することと、
をこの順で含む、
請求項1〜6のいずれか一項に記載の方法。 - 前記封止構造体が複数の前記電子部品を備え、前記複数の電子部品が、ICチップ、及びチップ型の受動部品を含む、請求項1〜7のいずれか一項に記載の方法。
- 前記封止構造体と前記再配線構造体とを接続する工程が、
前記封止構造体及び前記再配線構造体を、前記絶縁性接着層を介在させながら、前記バンプの融点よりも低い温度に加熱しながら圧着することにより、前記接続部と前記複数のバンプのうち少なくとも一部とが互いに接するように、前記封止構造体と前記再配線構造体とを予備的に接続することと、
前記封止構造体及び前記再配線構造体を前記バンプの融点よりも高い温度に加熱しながら加圧することにより、前記接続部と前記複数のバンプのうち少なくとも一部とを接合させることと、
をこの順に含む、請求項1〜8のいずれか一項に記載の方法。 - 対向する2つの主面を有する封止層と前記封止層内に封止された電子部品と前記電子部品に接続された接続部とを備える封止構造体であって、前記接続部が前記封止層の一方の主面である回路面に露出している、封止構造体と、
対向する2つの主面を有する再配線部と前記再配線部の一方の主面上に設けられた複数のバンプとを備える再配線構造体であって、前記再配線部が前記複数のバンプに接続された再配線、及び絶縁層を含む、再配線構造体と、
絶縁性接着層と、
を備え、
前記封止構造体と前記再配線構造体とが、前記回路面と前記バンプとが対向する向きで、前記絶縁性接着層を介在させながら、前記接続部と前記複数のバンプのうち少なくとも一部とが接続されるように接着され、それにより前記封止構造体と前記再配線構造体とが接続されている、電子部品装置。 - 前記再配線部が前記封止構造体の端部よりも外側にはみ出している、請求項10に記載の電子部品装置。
- 前記複数のバンプのうち一部が、前記封止構造体の端部よりも外側にはみ出した部分の前記再配線部上に配置されている、請求項11に記載の電子部品装置。
- 前記封止構造体の外表面のうち前記絶縁性接着層と接していない部分を覆う導電性のシールド膜を更に備える、請求項10〜12のいずれか一項に記載の電子部品装置。
- 前記封止構造体の外表面のうち前記絶縁性接着層と接していない部分と、前記再配線部の前記封止構造体側の主面のうち前記封止構造体の端部よりも外側にはみ出した部分とを覆う導電性のシールド膜を更に備え、
前記シールド膜が、前記封止構造体の端部よりも外側にはみ出した部分の前記再配線部上に配置された前記バンプと接続されている、請求項12に記載の電子部品装置。 - 前記封止構造体が複数の前記電子部品を備え、前記複数の電子部品が、ICチップ、及びチップ型の受動部品を含む、請求項10〜14のいずれか一項に記載の電子部品装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021083926A JP2021122063A (ja) | 2019-07-30 | 2021-05-18 | 電子部品装置を製造する方法、及び電子部品装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPPCT/JP2019/029888 | 2019-07-30 | ||
PCT/JP2019/029888 WO2021019697A1 (ja) | 2019-07-30 | 2019-07-30 | 電子部品装置を製造する方法、及び電子部品装置 |
PCT/JP2020/020129 WO2021019877A1 (ja) | 2019-07-30 | 2020-05-21 | 電子部品装置を製造する方法、及び電子部品装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021083926A Division JP2021122063A (ja) | 2019-07-30 | 2021-05-18 | 電子部品装置を製造する方法、及び電子部品装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6888749B1 JP6888749B1 (ja) | 2021-06-16 |
JPWO2021019877A1 true JPWO2021019877A1 (ja) | 2021-09-13 |
Family
ID=74229386
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020573064A Active JP6888749B1 (ja) | 2019-07-30 | 2020-05-21 | 電子部品装置を製造する方法 |
JP2021083926A Pending JP2021122063A (ja) | 2019-07-30 | 2021-05-18 | 電子部品装置を製造する方法、及び電子部品装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021083926A Pending JP2021122063A (ja) | 2019-07-30 | 2021-05-18 | 電子部品装置を製造する方法、及び電子部品装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220246488A1 (ja) |
JP (2) | JP6888749B1 (ja) |
TW (1) | TW202123391A (ja) |
WO (2) | WO2021019697A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220066036A1 (en) * | 2020-08-25 | 2022-03-03 | Lumentum Operations Llc | Package for a time of flight device |
KR20240034772A (ko) | 2021-07-27 | 2024-03-14 | 도레이 카부시키가이샤 | 복합 섬유속 및 섬유 제품 |
CN118202445A (zh) * | 2021-11-05 | 2024-06-14 | 罗姆股份有限公司 | 半导体装置的制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007242888A (ja) * | 2006-03-08 | 2007-09-20 | Sony Corp | 半導体パッケージ製造方法 |
JP2010165940A (ja) * | 2009-01-16 | 2010-07-29 | Shinko Electric Ind Co Ltd | 半導体素子の樹脂封止方法 |
US8338945B2 (en) * | 2010-10-26 | 2012-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Molded chip interposer structure and methods |
JP2012151353A (ja) * | 2011-01-20 | 2012-08-09 | Sharp Corp | 半導体モジュール |
JP2013074184A (ja) * | 2011-09-28 | 2013-04-22 | Nitto Denko Corp | 半導体装置の製造方法 |
JP5810957B2 (ja) * | 2012-02-17 | 2015-11-11 | 富士通株式会社 | 半導体装置の製造方法及び電子装置の製造方法 |
JP6115060B2 (ja) * | 2012-09-21 | 2017-04-19 | 富士通株式会社 | 電子デバイスの製造方法 |
US10707171B2 (en) * | 2015-12-22 | 2020-07-07 | Intel Corporation | Ultra small molded module integrated with die by module-on-wafer assembly |
-
2019
- 2019-07-30 WO PCT/JP2019/029888 patent/WO2021019697A1/ja active Application Filing
-
2020
- 2020-05-21 WO PCT/JP2020/020129 patent/WO2021019877A1/ja active Application Filing
- 2020-05-21 US US17/612,316 patent/US20220246488A1/en active Pending
- 2020-05-21 JP JP2020573064A patent/JP6888749B1/ja active Active
- 2020-05-21 TW TW109116949A patent/TW202123391A/zh unknown
-
2021
- 2021-05-18 JP JP2021083926A patent/JP2021122063A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW202123391A (zh) | 2021-06-16 |
JP2021122063A (ja) | 2021-08-26 |
US20220246488A1 (en) | 2022-08-04 |
WO2021019697A1 (ja) | 2021-02-04 |
WO2021019877A1 (ja) | 2021-02-04 |
JP6888749B1 (ja) | 2021-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6670264B2 (en) | Method of making electrode-to-electrode bond structure and electrode-to-electrode bond structure made thereby | |
JP6888749B1 (ja) | 電子部品装置を製造する方法 | |
WO2013133015A1 (ja) | 半導体装置の製造方法および半導体装置の製造装置 | |
JP5004351B2 (ja) | 半導体装置の製造方法 | |
JP6800140B2 (ja) | フリップチップ実装体の製造方法、フリップチップ実装体、および先供給型アンダーフィル用樹脂組成物 | |
JP4206631B2 (ja) | 熱硬化性液状封止樹脂組成物、半導体素子の組立方法及び半導体装置 | |
JP4254216B2 (ja) | 半田ペースト及びそれを用いた半導体装置の組立方法 | |
JP6885527B1 (ja) | 電子部品装置を製造する方法、及び電子部品装置 | |
JP6838686B2 (ja) | 電子部品装置を製造する方法、及びこれに用いられる積層フィルム | |
WO2021131620A1 (ja) | 接続構造体及び接続構造体の製造方法 | |
TWI839521B (zh) | 製造電子零件裝置的方法以及電子零件裝置 | |
JP7434758B2 (ja) | 電子部品装置を製造する方法、及び電子部品装置 | |
JP2008198745A (ja) | 半田バンプの形成方法、半田バンプ、半導体装置および半導体装置の製造方法 | |
JP7172167B2 (ja) | 半導体装置の製造方法、及びそれに用いられる半導体用接着剤 | |
JP7314808B2 (ja) | 実装済み配線基板の製造方法、及びそれを用いた半導体装置の製造方法 | |
WO2023026363A1 (ja) | 電子部品装置を製造する方法、及び電子部品装置 | |
WO2020179874A1 (ja) | 電子部品装置を製造する方法 | |
JP2021182600A (ja) | 電子部品装置を製造する方法 | |
TW202122535A (zh) | 連接體之製造方法、異向性導電接合材料、及連接體 | |
JP2009130072A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201225 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201225 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20201225 |
|
TRDD | Decision of grant or rejection written | ||
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20210414 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210420 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210503 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6888749 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |