JPWO2020250300A1 - 表面に微細凹凸構造を備えたプラスチック素子の製造方法 - Google Patents
表面に微細凹凸構造を備えたプラスチック素子の製造方法 Download PDFInfo
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- 239000004033 plastic Substances 0.000 title claims abstract description 138
- 229920003023 plastic Polymers 0.000 title claims abstract description 138
- 238000000034 method Methods 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000001020 plasma etching Methods 0.000 claims abstract description 30
- 230000009257 reactivity Effects 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 73
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 42
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910018503 SF6 Inorganic materials 0.000 claims description 18
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 18
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 11
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 60
- 238000011282 treatment Methods 0.000 description 43
- 238000002834 transmittance Methods 0.000 description 36
- 239000005871 repellent Substances 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 28
- 230000002940 repellent Effects 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000001878 scanning electron micrograph Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 8
- 239000004926 polymethyl methacrylate Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 239000004417 polycarbonate Substances 0.000 description 7
- 229920000515 polycarbonate Polymers 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- -1 fluorine radicals Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32394—Treating interior parts of workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0037—Other properties
- B29K2995/0072—Roughness, e.g. anti-slip
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0037—Other properties
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- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
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- Treatments Of Macromolecular Shaped Articles (AREA)
- Drying Of Semiconductors (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
Description
条件1と条件2とは、加工時間のみが異なる。一般的に、加工時間(エッチング時間)が長いほど微細凹凸構造の平均ピッチ及び平均深さの値は大きくなるので、加工時間を変化させることにより微細凹凸構造の平均ピッチ及び平均深さの値を同様に変化させることはできる。表1によれば、加工時間の長い条件2のエッチングによって得られた微細凹凸構造の平均ピッチ及び平均深さの値は、加工時間の短い条件1のエッチングによって得られた微細凹凸構造の平均ピッチ及び平均深さの値よりもそれぞれ大きい。
第1のステップの雰囲気ガスである第1のガスは酸素と六フッ化硫黄(SF6)との混合ガスである。第2のステップの雰囲気ガスである第2のガスは酸素とトリフルオロメタン(CHF3)との混合ガスである。第2のガスのプラスチック素子に対する反応性は第1のガスのプラスチック素子に対する反応性よりも低い。第1のステップ終了後において、平均ピッチは0.06μmであり平均深さは0.1μmである。第2のステップにおいて、平均深さは0.1μmから0.3μmへ増加するが平均ピッチは0.06μmに維持される。このようにして、平均ピッチ及び平均深さが可視光の反射防止に適切な微細凹凸構造が得られる。
Claims (7)
- 表面に微細凹凸構造を備えたプラスチック素子の製造方法であって、
第1のガスの雰囲気の反応性イオンエッチングによって該プラスチック素子の表面に0.05マイクロメータから1マイクロメータの範囲の所定の値の平均ピッチの微細凹凸構造を生成する第1のステップと、
該第1のガスの該プラスチック素子に対する反応性よりも該プラスチック素子に対する反応性が低い第2のガスの雰囲気における反応性イオンエッチングによって平均ピッチの該所定の値をほぼ維持しながら該微細凹凸構造の平均深さを0.15マイクロメータから1.5マイクロメータの範囲の所定の値とする第2のステップと、を含む表面に微細凹凸構造を備えたプラスチック素子の製造方法。 - 該第1のガスが六フッ化硫黄(SF6)、六フッ化硫黄と酸素(O2)もしくはアルゴン(Ar)の少なくとも一方との混合物、または酸素である請求項1に記載の表面に微細凹凸構造を備えたプラスチック素子の製造方法。
- 該第2のステップで使用されるガスがトリフルオロメタン(CHF3)、トリフルオロメタンと酸素もしくはアルゴンの少なくとも一方との混合物、四フッ化炭素(CF4)、四フッ化炭素と酸素もしくはアルゴンの少なくとも一方との混合物である請求項1または2に記載の表面に微細凹凸構造を備えたプラスチック素子の製造方法。
- 第3のガスの雰囲気のプラズマ処理によって、イオンエッチングが生じないようにしながら該微細凹凸構造の表面にフッ素ラジカルを結合させる第3のステップをさらに含む請求項1から3のいずれかに記載の表面に微細凹凸構造を備えたプラスチック素子の製造方法。
- 該第3のガスがトリフルオロメタン、四フッ化炭素、または六フッ化硫黄である請求項4に記載の表面に微細凹凸構造を備えたプラスチック素子の製造方法。
- 該プラスチック素子が光学素子である請求項1から5のいずれかに記載の表面に微細凹凸構造を備えたプラスチック素子の製造方法。
- 該微細凹凸構造が反射防止用微細凹凸構造である請求項1から6のいずれかに記載の表面に微細凹凸構造を備えたプラスチック素子の製造方法。
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PCT/JP2019/023086 WO2020250300A1 (ja) | 2019-06-11 | 2019-06-11 | 表面に微細凹凸構造を備えたプラスチック素子の製造方法 |
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JP6611113B1 JP6611113B1 (ja) | 2019-11-27 |
JPWO2020250300A1 true JPWO2020250300A1 (ja) | 2021-09-13 |
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CA3207990A1 (en) * | 2022-08-16 | 2024-02-16 | Thorlabs, Inc. | Method for producing anti-reflective textured surface using additive thin film |
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JP3368225B2 (ja) * | 1999-03-11 | 2003-01-20 | キヤノン株式会社 | 回折光学素子の製造方法 |
JP2002283761A (ja) * | 2001-01-17 | 2002-10-03 | Process Lab Micron:Kk | 印刷版及びその製造方法 |
DE10241708B4 (de) | 2002-09-09 | 2005-09-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Reduzierung der Grenzflächenreflexion von Kunststoffsubstraten sowie derart modifiziertes Substrat und dessen Verwendung |
JP2005331868A (ja) * | 2004-05-21 | 2005-12-02 | Canon Inc | 反射防止構造を有する光学素子およびその製造方法 |
DE102008018866A1 (de) * | 2008-04-15 | 2009-10-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflexionsminderndes Interferenzschichtsystem und Verfahren zu dessen Herstellung |
EP3115334B1 (en) | 2008-12-30 | 2018-03-21 | 3M Innovative Properties Company | Method for making nanostructured surfaces using a microstructured surface and a nanoscale mask |
US8634146B2 (en) * | 2010-05-03 | 2014-01-21 | 3M Innovative Properties Company | Method of making a nanostructure |
WO2013148031A1 (en) | 2012-03-26 | 2013-10-03 | 3M Innovative Properties Company | Nanostructured material and method of making the same |
DE112013005487B4 (de) | 2012-11-16 | 2022-07-07 | Nalux Co., Ltd. | Verfahren zur Herstellung einer Form für eine Antireflexionsstruktur und einer Form für ein optisches Gitter |
US20150192702A1 (en) | 2012-11-16 | 2015-07-09 | Nalux Co., Ltd. | Mold, optical element and method for manufacturing the same |
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