JPWO2020250083A1 - - Google Patents

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Publication number
JPWO2020250083A1
JPWO2020250083A1 JP2021525403A JP2021525403A JPWO2020250083A1 JP WO2020250083 A1 JPWO2020250083 A1 JP WO2020250083A1 JP 2021525403 A JP2021525403 A JP 2021525403A JP 2021525403 A JP2021525403 A JP 2021525403A JP WO2020250083 A1 JPWO2020250083 A1 JP WO2020250083A1
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JP
Japan
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JP2021525403A
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Japanese (ja)
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JPWO2020250083A5 (ja
JP7601761B2 (ja
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Publication of JPWO2020250083A1 publication Critical patent/JPWO2020250083A1/ja
Publication of JPWO2020250083A5 publication Critical patent/JPWO2020250083A5/ja
Priority to JP2024212021A priority Critical patent/JP7727818B2/ja
Application granted granted Critical
Publication of JP7601761B2 publication Critical patent/JP7601761B2/ja
Priority to JP2025133157A priority patent/JP2025159088A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
JP2021525403A 2019-06-14 2020-06-02 半導体装置の作製方法 Active JP7601761B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024212021A JP7727818B2 (ja) 2019-06-14 2024-12-05 半導体装置の作製方法
JP2025133157A JP2025159088A (ja) 2019-06-14 2025-08-08 半導体装置

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
JP2019111337 2019-06-14
JP2019111337 2019-06-14
JP2019156743 2019-08-29
JP2019156743 2019-08-29
JP2019165482 2019-09-11
JP2019165482 2019-09-11
JP2019183633 2019-10-04
JP2019183633 2019-10-04
JP2019239534 2019-12-27
JP2019239534 2019-12-27
JP2020050342 2020-03-20
JP2020050342 2020-03-20
PCT/IB2020/055190 WO2020250083A1 (ja) 2019-06-14 2020-06-02 半導体装置、および半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024212021A Division JP7727818B2 (ja) 2019-06-14 2024-12-05 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPWO2020250083A1 true JPWO2020250083A1 (enExample) 2020-12-17
JPWO2020250083A5 JPWO2020250083A5 (ja) 2023-05-24
JP7601761B2 JP7601761B2 (ja) 2024-12-17

Family

ID=73781334

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021525403A Active JP7601761B2 (ja) 2019-06-14 2020-06-02 半導体装置の作製方法
JP2024212021A Active JP7727818B2 (ja) 2019-06-14 2024-12-05 半導体装置の作製方法
JP2025133157A Pending JP2025159088A (ja) 2019-06-14 2025-08-08 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024212021A Active JP7727818B2 (ja) 2019-06-14 2024-12-05 半導体装置の作製方法
JP2025133157A Pending JP2025159088A (ja) 2019-06-14 2025-08-08 半導体装置

Country Status (6)

Country Link
US (1) US20220238719A1 (enExample)
JP (3) JP7601761B2 (enExample)
KR (1) KR20220020831A (enExample)
CN (1) CN113924657A (enExample)
TW (1) TWI858071B (enExample)
WO (1) WO2020250083A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12349403B2 (en) * 2019-02-28 2025-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxygen blocking films
US20230147329A1 (en) * 2021-11-08 2023-05-11 International Business Machines Corporation Single Process Double Gate and Variable Threshold Voltage MOSFET
TW202349459A (zh) * 2022-04-15 2023-12-16 日商半導體能源研究所股份有限公司 疊層體的製造方法及半導體裝置的製造方法
JP2024008440A (ja) * 2022-07-08 2024-01-19 株式会社ジャパンディスプレイ 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH031572A (ja) * 1989-05-29 1991-01-08 Fujitsu Ltd 薄膜トランジスタマトリクス及びその製造方法
JPH0562969A (ja) * 1991-09-02 1993-03-12 Fuji Electric Co Ltd 絶縁膜の製造方法
JP2004156137A (ja) * 2002-10-16 2004-06-03 Ulvac Japan Ltd 薄膜形成装置及び薄膜形成方法
JP2016208023A (ja) * 2015-04-15 2016-12-08 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2018146569A1 (ja) * 2017-02-07 2018-08-16 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP2019033253A (ja) * 2017-08-04 2019-02-28 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102450889B1 (ko) * 2009-12-04 2022-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101434948B1 (ko) 2009-12-25 2014-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE112011102644B4 (de) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8901556B2 (en) * 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
KR102290247B1 (ko) * 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
KR102440302B1 (ko) * 2015-04-13 2022-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI693719B (zh) * 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102617041B1 (ko) * 2015-12-28 2023-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 장치, 텔레비전 시스템, 및 전자 기기
KR102384624B1 (ko) 2016-10-21 2022-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20250158817A (ko) 2017-08-04 2025-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2019091872A (ja) * 2017-10-27 2019-06-13 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH031572A (ja) * 1989-05-29 1991-01-08 Fujitsu Ltd 薄膜トランジスタマトリクス及びその製造方法
JPH0562969A (ja) * 1991-09-02 1993-03-12 Fuji Electric Co Ltd 絶縁膜の製造方法
JP2004156137A (ja) * 2002-10-16 2004-06-03 Ulvac Japan Ltd 薄膜形成装置及び薄膜形成方法
JP2016208023A (ja) * 2015-04-15 2016-12-08 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2018146569A1 (ja) * 2017-02-07 2018-08-16 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP2019033253A (ja) * 2017-08-04 2019-02-28 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Also Published As

Publication number Publication date
CN113924657A (zh) 2022-01-11
KR20220020831A (ko) 2022-02-21
JP2025159088A (ja) 2025-10-17
TW202046406A (zh) 2020-12-16
JP2025026536A (ja) 2025-02-21
WO2020250083A1 (ja) 2020-12-17
US20220238719A1 (en) 2022-07-28
JP7601761B2 (ja) 2024-12-17
JP7727818B2 (ja) 2025-08-21
TWI858071B (zh) 2024-10-11

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