CN113924657A - 半导体装置以及半导体装置的制造方法 - Google Patents

半导体装置以及半导体装置的制造方法 Download PDF

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Publication number
CN113924657A
CN113924657A CN202080041969.7A CN202080041969A CN113924657A CN 113924657 A CN113924657 A CN 113924657A CN 202080041969 A CN202080041969 A CN 202080041969A CN 113924657 A CN113924657 A CN 113924657A
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oxide
insulator
film
conductor
oxygen
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Chinese (zh)
Inventor
山崎舜平
泽井宽美
驹形大树
神保安弘
奥野直树
小松良宽
安藤元晴
森若智昭
森谷幸司
石川纯
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
CN202080041969.7A 2019-06-14 2020-06-02 半导体装置以及半导体装置的制造方法 Pending CN113924657A (zh)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
JP2019-111337 2019-06-14
JP2019111337 2019-06-14
JP2019-156743 2019-08-29
JP2019156743 2019-08-29
JP2019-165482 2019-09-11
JP2019165482 2019-09-11
JP2019183633 2019-10-04
JP2019-183633 2019-10-04
JP2019239534 2019-12-27
JP2019-239534 2019-12-27
JP2020050342 2020-03-20
JP2020-050342 2020-03-20
PCT/IB2020/055190 WO2020250083A1 (ja) 2019-06-14 2020-06-02 半導体装置、および半導体装置の作製方法

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CN113924657A true CN113924657A (zh) 2022-01-11

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US (1) US20220238719A1 (enExample)
JP (3) JP7601761B2 (enExample)
KR (1) KR20220020831A (enExample)
CN (1) CN113924657A (enExample)
TW (1) TWI858071B (enExample)
WO (1) WO2020250083A1 (enExample)

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US12349403B2 (en) * 2019-02-28 2025-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxygen blocking films
US20230147329A1 (en) * 2021-11-08 2023-05-11 International Business Machines Corporation Single Process Double Gate and Variable Threshold Voltage MOSFET
TW202349459A (zh) * 2022-04-15 2023-12-16 日商半導體能源研究所股份有限公司 疊層體的製造方法及半導體裝置的製造方法
JP2024008440A (ja) * 2022-07-08 2024-01-19 株式会社ジャパンディスプレイ 半導体装置

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JP3953444B2 (ja) 2002-10-16 2007-08-08 株式会社アルバック 薄膜形成装置及び薄膜形成方法
CN104992962B (zh) * 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
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KR102290247B1 (ko) * 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
KR102788207B1 (ko) * 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI693719B (zh) * 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
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CN118248744A (zh) * 2017-08-04 2024-06-25 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
KR102810037B1 (ko) 2017-08-04 2025-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2019091872A (ja) * 2017-10-27 2019-06-13 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

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TWI858071B (zh) 2024-10-11
WO2020250083A1 (ja) 2020-12-17
JP7601761B2 (ja) 2024-12-17
JP7727818B2 (ja) 2025-08-21
JP2025026536A (ja) 2025-02-21
JPWO2020250083A1 (enExample) 2020-12-17
KR20220020831A (ko) 2022-02-21
US20220238719A1 (en) 2022-07-28
JP2025159088A (ja) 2025-10-17

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