JPWO2020209002A1 - - Google Patents

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Publication number
JPWO2020209002A1
JPWO2020209002A1 JP2021513529A JP2021513529A JPWO2020209002A1 JP WO2020209002 A1 JPWO2020209002 A1 JP WO2020209002A1 JP 2021513529 A JP2021513529 A JP 2021513529A JP 2021513529 A JP2021513529 A JP 2021513529A JP WO2020209002 A1 JPWO2020209002 A1 JP WO2020209002A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021513529A
Other versions
JP7352903B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020209002A1 publication Critical patent/JPWO2020209002A1/ja
Priority to JP2023144900A priority Critical patent/JP2023164523A/ja
Application granted granted Critical
Publication of JP7352903B2 publication Critical patent/JP7352903B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2021513529A 2019-04-10 2020-03-13 撮像装置 Active JP7352903B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023144900A JP2023164523A (ja) 2019-04-10 2023-09-07 撮像装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019075159 2019-04-10
JP2019075159 2019-04-10
JP2020006104 2020-01-17
JP2020006104 2020-01-17
PCT/JP2020/011109 WO2020209002A1 (ja) 2019-04-10 2020-03-13 撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023144900A Division JP2023164523A (ja) 2019-04-10 2023-09-07 撮像装置

Publications (2)

Publication Number Publication Date
JPWO2020209002A1 true JPWO2020209002A1 (ja) 2020-10-15
JP7352903B2 JP7352903B2 (ja) 2023-09-29

Family

ID=72751879

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021513529A Active JP7352903B2 (ja) 2019-04-10 2020-03-13 撮像装置
JP2023144900A Pending JP2023164523A (ja) 2019-04-10 2023-09-07 撮像装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023144900A Pending JP2023164523A (ja) 2019-04-10 2023-09-07 撮像装置

Country Status (5)

Country Link
US (1) US20210202582A1 (ja)
EP (1) EP3955319B1 (ja)
JP (2) JP7352903B2 (ja)
CN (1) CN112673483B (ja)
WO (1) WO2020209002A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102562515B1 (ko) * 2021-06-11 2023-08-03 비스에라 테크놀러지스 컴퍼니 리미티드 이미지 센서 구조체 및 그 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011520262A (ja) * 2008-05-01 2011-07-14 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン 改善された、ポリマーで被覆されたカーボンナノチューブの近赤外光活性デバイス
JP2011520263A (ja) * 2008-05-01 2011-07-14 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン ポリマー被覆カーボンナノチューブ近赤外線光起電デバイス
WO2017006520A1 (ja) * 2015-07-08 2017-01-12 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018195809A (ja) * 2017-05-15 2018-12-06 パナソニックＩｐマネジメント株式会社 光電変換素子の製造方法
JP2019009427A (ja) * 2017-06-23 2019-01-17 パナソニックＩｐマネジメント株式会社 光検出素子

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009509129A (ja) * 2005-08-25 2009-03-05 エドワード・サージェント 高利得及び高感度の量子ドット光学デバイス及びその作製方法
TWI641897B (zh) * 2006-05-16 2018-11-21 日商半導體能源研究所股份有限公司 液晶顯示裝置
US8058675B2 (en) * 2006-12-27 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device using the same
JP5172175B2 (ja) * 2007-02-28 2013-03-27 富士フイルム株式会社 光電変換素子及び固体撮像素子
US8380018B2 (en) * 2007-05-14 2013-02-19 John W. Pettit Conductive coating based on polymer-carbon nanotube composite
US8946848B2 (en) * 2008-06-05 2015-02-03 Omnivision Technologies, Inc. Apparatus and method for image sensor with carbon nanotube based transparent conductive coating
KR101605424B1 (ko) * 2010-03-19 2016-03-22 인비사지 테크놀로지스, 인크. 감지성 반도체 다이오드를 채용한 이미지 센서
JP2012124338A (ja) * 2010-12-08 2012-06-28 Panasonic Corp 固体撮像素子及びその製造方法
TWI565087B (zh) * 2011-07-01 2017-01-01 劉鴻達 具有光電轉換元件的裝置、陣列裝置及液晶顯示器
JP6425448B2 (ja) * 2014-07-31 2018-11-21 キヤノン株式会社 光電変換装置、および、撮像システム
US10054563B2 (en) * 2015-03-31 2018-08-21 Rge Smart Pte. Ltd. Optoelectronic pixel sensor
WO2017033736A1 (ja) * 2015-08-27 2017-03-02 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および撮像素子ならびに電子機器
JP7140469B2 (ja) * 2016-07-15 2022-09-21 キヤノン株式会社 光電変換装置、および、撮像システム
JP6834400B2 (ja) * 2016-11-22 2021-02-24 ソニー株式会社 撮像素子、積層型撮像素子、撮像装置及び電子装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011520262A (ja) * 2008-05-01 2011-07-14 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン 改善された、ポリマーで被覆されたカーボンナノチューブの近赤外光活性デバイス
JP2011520263A (ja) * 2008-05-01 2011-07-14 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン ポリマー被覆カーボンナノチューブ近赤外線光起電デバイス
WO2017006520A1 (ja) * 2015-07-08 2017-01-12 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018195809A (ja) * 2017-05-15 2018-12-06 パナソニックＩｐマネジメント株式会社 光電変換素子の製造方法
JP2019009427A (ja) * 2017-06-23 2019-01-17 パナソニックＩｐマネジメント株式会社 光検出素子

Also Published As

Publication number Publication date
JP7352903B2 (ja) 2023-09-29
EP3955319A4 (en) 2022-07-13
CN112673483B (zh) 2024-03-22
CN112673483A (zh) 2021-04-16
JP2023164523A (ja) 2023-11-10
US20210202582A1 (en) 2021-07-01
WO2020209002A1 (ja) 2020-10-15
EP3955319B1 (en) 2023-06-14
EP3955319A1 (en) 2022-02-16

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