JPWO2020189534A1 - - Google Patents
Info
- Publication number
- JPWO2020189534A1 JPWO2020189534A1 JP2021507296A JP2021507296A JPWO2020189534A1 JP WO2020189534 A1 JPWO2020189534 A1 JP WO2020189534A1 JP 2021507296 A JP2021507296 A JP 2021507296A JP 2021507296 A JP2021507296 A JP 2021507296A JP WO2020189534 A1 JPWO2020189534 A1 JP WO2020189534A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
- H10F39/1843—Infrared image sensors of the hybrid type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
- H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019048551 | 2019-03-15 | ||
| JP2019048551 | 2019-03-15 | ||
| PCT/JP2020/010981 WO2020189534A1 (ja) | 2019-03-15 | 2020-03-13 | 撮像素子および半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020189534A1 true JPWO2020189534A1 (https=) | 2020-09-24 |
| JPWO2020189534A5 JPWO2020189534A5 (https=) | 2023-03-14 |
| JP7642528B2 JP7642528B2 (ja) | 2025-03-10 |
Family
ID=72519317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021507296A Active JP7642528B2 (ja) | 2019-03-15 | 2020-03-13 | 撮像素子および半導体素子 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US12027562B2 (https=) |
| EP (1) | EP3940752B1 (https=) |
| JP (1) | JP7642528B2 (https=) |
| KR (2) | KR102805549B1 (https=) |
| CN (1) | CN113348535A (https=) |
| TW (1) | TWI860337B (https=) |
| WO (1) | WO2020189534A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230091873A (ko) * | 2020-10-23 | 2023-06-23 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 장치 및 수광 소자 |
| JP2022083871A (ja) | 2020-11-25 | 2022-06-06 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び撮像装置 |
| CN116547814A (zh) * | 2020-12-08 | 2023-08-04 | 索尼半导体解决方案公司 | 固态成像元件和电子设备 |
| TWI912406B (zh) * | 2020-12-11 | 2026-01-21 | 日商索尼半導體解決方案公司 | 受光元件、受光裝置及電子機器 |
| JP7650654B2 (ja) * | 2020-12-22 | 2025-03-25 | 日本放送協会 | 表示装置及びその製造方法 |
| CN116982157A (zh) * | 2021-03-15 | 2023-10-31 | 索尼半导体解决方案公司 | 固态摄像装置 |
| KR20220157302A (ko) * | 2021-05-20 | 2022-11-29 | 캐논 가부시끼가이샤 | 막, 소자, 및 기기 |
| EP4099387A3 (en) | 2021-06-01 | 2023-04-05 | Samsung Electronics Co., Ltd. | Image sensor including a transistor with a vertical channel and a method of manufacturing the same |
| JP7421532B2 (ja) * | 2021-11-12 | 2024-01-24 | キヤノン株式会社 | 光電変換装置及び発光装置 |
| JP2023116098A (ja) * | 2022-02-09 | 2023-08-22 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
| JP2023130928A (ja) * | 2022-03-08 | 2023-09-21 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、光検出装置、及び電子機器 |
| WO2024014209A1 (ja) * | 2022-07-12 | 2024-01-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP2024064783A (ja) * | 2022-10-28 | 2024-05-14 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| KR20240060240A (ko) | 2022-10-28 | 2024-05-08 | 삼성전자주식회사 | 적층형 이미지 센서 |
| CN118866914B (zh) * | 2023-04-19 | 2025-10-03 | 长鑫存储技术有限公司 | 半导体结构、图像传感器及半导体结构的制备方法 |
| JP2025056833A (ja) | 2023-09-27 | 2025-04-09 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014022561A (ja) * | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
| JP2015032687A (ja) * | 2013-08-02 | 2015-02-16 | ソニー株式会社 | 撮像素子、電子機器、および撮像素子の製造方法 |
| JP2015162668A (ja) * | 2014-02-28 | 2015-09-07 | 株式会社東芝 | 半導体デバイスの製造方法 |
| JP2017027982A (ja) * | 2015-07-16 | 2017-02-02 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
| WO2017169884A1 (ja) * | 2016-03-31 | 2017-10-05 | ソニー株式会社 | 固体撮像素子、センサ装置、および電子機器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5111157B2 (ja) * | 2008-02-27 | 2012-12-26 | キヤノン株式会社 | 光電変換装置及び光電変換装置を用いた撮像システム |
| TWI433307B (zh) * | 2008-10-22 | 2014-04-01 | Sony Corp | 固態影像感測器、其驅動方法、成像裝置及電子器件 |
| JP5985136B2 (ja) | 2009-03-19 | 2016-09-06 | ソニー株式会社 | 半導体装置とその製造方法、及び電子機器 |
| JP5531580B2 (ja) * | 2009-11-25 | 2014-06-25 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| JP6025750B2 (ja) * | 2011-12-27 | 2016-11-16 | キヤノン株式会社 | 撮像装置 |
| JP6215246B2 (ja) | 2014-05-16 | 2017-10-18 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および固体撮像素子の製造方法、並びに電子機器 |
| JP6404697B2 (ja) * | 2014-12-10 | 2018-10-10 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| KR20200056490A (ko) | 2015-09-30 | 2020-05-22 | 가부시키가이샤 니콘 | 촬상 소자 및 촬상 장치 |
| KR102661038B1 (ko) * | 2016-02-09 | 2024-04-26 | 소니그룹주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 및 고체 촬상 소자 및 전자 기기 |
| JP6836190B2 (ja) | 2017-09-08 | 2021-02-24 | 豊田合成株式会社 | 両開き収納装置 |
-
2020
- 2020-03-11 TW TW109108082A patent/TWI860337B/zh active
- 2020-03-13 EP EP20773653.9A patent/EP3940752B1/en active Active
- 2020-03-13 KR KR1020217028339A patent/KR102805549B1/ko active Active
- 2020-03-13 WO PCT/JP2020/010981 patent/WO2020189534A1/ja not_active Ceased
- 2020-03-13 US US17/437,101 patent/US12027562B2/en active Active
- 2020-03-13 KR KR1020257012201A patent/KR20250053995A/ko active Pending
- 2020-03-13 CN CN202080010658.4A patent/CN113348535A/zh active Pending
- 2020-03-13 JP JP2021507296A patent/JP7642528B2/ja active Active
-
2024
- 2024-04-15 US US18/635,309 patent/US20240266381A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014022561A (ja) * | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
| JP2015032687A (ja) * | 2013-08-02 | 2015-02-16 | ソニー株式会社 | 撮像素子、電子機器、および撮像素子の製造方法 |
| JP2015162668A (ja) * | 2014-02-28 | 2015-09-07 | 株式会社東芝 | 半導体デバイスの製造方法 |
| JP2017027982A (ja) * | 2015-07-16 | 2017-02-02 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
| WO2017169884A1 (ja) * | 2016-03-31 | 2017-10-05 | ソニー株式会社 | 固体撮像素子、センサ装置、および電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210141935A (ko) | 2021-11-23 |
| US20240266381A1 (en) | 2024-08-08 |
| EP3940752A1 (en) | 2022-01-19 |
| KR20250053995A (ko) | 2025-04-22 |
| JP7642528B2 (ja) | 2025-03-10 |
| EP3940752B1 (en) | 2025-06-25 |
| WO2020189534A1 (ja) | 2020-09-24 |
| US20220181364A1 (en) | 2022-06-09 |
| KR102805549B1 (ko) | 2025-05-13 |
| TWI860337B (zh) | 2024-11-01 |
| CN113348535A (zh) | 2021-09-03 |
| US12027562B2 (en) | 2024-07-02 |
| EP3940752A4 (en) | 2022-05-18 |
| TW202044335A (zh) | 2020-12-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230306 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230306 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240521 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240719 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20241022 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241108 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250128 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250226 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7642528 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |