JP7642528B2 - 撮像素子および半導体素子 - Google Patents

撮像素子および半導体素子 Download PDF

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JP7642528B2
JP7642528B2 JP2021507296A JP2021507296A JP7642528B2 JP 7642528 B2 JP7642528 B2 JP 7642528B2 JP 2021507296 A JP2021507296 A JP 2021507296A JP 2021507296 A JP2021507296 A JP 2021507296A JP 7642528 B2 JP7642528 B2 JP 7642528B2
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semiconductor substrate
channel region
gate electrode
transistor
photoelectric conversion
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JPWO2020189534A5 (https=
JPWO2020189534A1 (https=
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慎一 三宅
浩史 山下
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021507296A 2019-03-15 2020-03-13 撮像素子および半導体素子 Active JP7642528B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019048551 2019-03-15
JP2019048551 2019-03-15
PCT/JP2020/010981 WO2020189534A1 (ja) 2019-03-15 2020-03-13 撮像素子および半導体素子

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JPWO2020189534A1 JPWO2020189534A1 (https=) 2020-09-24
JPWO2020189534A5 JPWO2020189534A5 (https=) 2023-03-14
JP7642528B2 true JP7642528B2 (ja) 2025-03-10

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US (2) US12027562B2 (https=)
EP (1) EP3940752B1 (https=)
JP (1) JP7642528B2 (https=)
KR (2) KR102805549B1 (https=)
CN (1) CN113348535A (https=)
TW (1) TWI860337B (https=)
WO (1) WO2020189534A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230091873A (ko) * 2020-10-23 2023-06-23 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 수광 소자
JP2022083871A (ja) 2020-11-25 2022-06-06 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
CN116547814A (zh) * 2020-12-08 2023-08-04 索尼半导体解决方案公司 固态成像元件和电子设备
TWI912406B (zh) * 2020-12-11 2026-01-21 日商索尼半導體解決方案公司 受光元件、受光裝置及電子機器
JP7650654B2 (ja) * 2020-12-22 2025-03-25 日本放送協会 表示装置及びその製造方法
CN116982157A (zh) * 2021-03-15 2023-10-31 索尼半导体解决方案公司 固态摄像装置
KR20220157302A (ko) * 2021-05-20 2022-11-29 캐논 가부시끼가이샤 막, 소자, 및 기기
EP4099387A3 (en) 2021-06-01 2023-04-05 Samsung Electronics Co., Ltd. Image sensor including a transistor with a vertical channel and a method of manufacturing the same
JP7421532B2 (ja) * 2021-11-12 2024-01-24 キヤノン株式会社 光電変換装置及び発光装置
JP2023116098A (ja) * 2022-02-09 2023-08-22 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
JP2023130928A (ja) * 2022-03-08 2023-09-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置、光検出装置、及び電子機器
WO2024014209A1 (ja) * 2022-07-12 2024-01-18 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2024064783A (ja) * 2022-10-28 2024-05-14 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
KR20240060240A (ko) 2022-10-28 2024-05-08 삼성전자주식회사 적층형 이미지 센서
CN118866914B (zh) * 2023-04-19 2025-10-03 长鑫存储技术有限公司 半导体结构、图像传感器及半导体结构的制备方法
JP2025056833A (ja) 2023-09-27 2025-04-09 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2014022561A (ja) 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2015032687A (ja) 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2015162668A (ja) 2014-02-28 2015-09-07 株式会社東芝 半導体デバイスの製造方法
JP2017027982A (ja) 2015-07-16 2017-02-02 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
WO2017169884A1 (ja) 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、センサ装置、および電子機器

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JP5111157B2 (ja) * 2008-02-27 2012-12-26 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
TWI433307B (zh) * 2008-10-22 2014-04-01 Sony Corp 固態影像感測器、其驅動方法、成像裝置及電子器件
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5531580B2 (ja) * 2009-11-25 2014-06-25 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP6025750B2 (ja) * 2011-12-27 2016-11-16 キヤノン株式会社 撮像装置
JP6215246B2 (ja) 2014-05-16 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
JP6404697B2 (ja) * 2014-12-10 2018-10-10 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR20200056490A (ko) 2015-09-30 2020-05-22 가부시키가이샤 니콘 촬상 소자 및 촬상 장치
KR102661038B1 (ko) * 2016-02-09 2024-04-26 소니그룹주식회사 반도체 장치 및 반도체 장치의 제조 방법 및 고체 촬상 소자 및 전자 기기
JP6836190B2 (ja) 2017-09-08 2021-02-24 豊田合成株式会社 両開き収納装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022561A (ja) 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2015032687A (ja) 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2015162668A (ja) 2014-02-28 2015-09-07 株式会社東芝 半導体デバイスの製造方法
JP2017027982A (ja) 2015-07-16 2017-02-02 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
WO2017169884A1 (ja) 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、センサ装置、および電子機器

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KR20210141935A (ko) 2021-11-23
US20240266381A1 (en) 2024-08-08
EP3940752A1 (en) 2022-01-19
KR20250053995A (ko) 2025-04-22
EP3940752B1 (en) 2025-06-25
WO2020189534A1 (ja) 2020-09-24
US20220181364A1 (en) 2022-06-09
JPWO2020189534A1 (https=) 2020-09-24
KR102805549B1 (ko) 2025-05-13
TWI860337B (zh) 2024-11-01
CN113348535A (zh) 2021-09-03
US12027562B2 (en) 2024-07-02
EP3940752A4 (en) 2022-05-18
TW202044335A (zh) 2020-12-01

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