JPWO2020174880A1 - - Google Patents

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Publication number
JPWO2020174880A1
JPWO2020174880A1 JP2021501663A JP2021501663A JPWO2020174880A1 JP WO2020174880 A1 JPWO2020174880 A1 JP WO2020174880A1 JP 2021501663 A JP2021501663 A JP 2021501663A JP 2021501663 A JP2021501663 A JP 2021501663A JP WO2020174880 A1 JPWO2020174880 A1 JP WO2020174880A1
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JP
Japan
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JP2021501663A
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JP7315649B2 (ja
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Publication of JPWO2020174880A1 publication Critical patent/JPWO2020174880A1/ja
Application granted granted Critical
Publication of JP7315649B2 publication Critical patent/JP7315649B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/038—Electrodes, e.g. special shape, configuration or composition
    • H01S3/0388—Compositions, materials or coatings
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/038—Electrodes, e.g. special shape, configuration or composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
JP2021501663A 2019-02-28 2020-01-06 銅電極材料 Active JP7315649B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019036759 2019-02-28
JP2019036759 2019-02-28
JP2019123226 2019-07-01
JP2019123226 2019-07-01
PCT/JP2020/000092 WO2020174880A1 (ja) 2019-02-28 2020-01-06 銅電極材料

Publications (2)

Publication Number Publication Date
JPWO2020174880A1 true JPWO2020174880A1 (ja) 2020-09-03
JP7315649B2 JP7315649B2 (ja) 2023-07-26

Family

ID=72239341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021501663A Active JP7315649B2 (ja) 2019-02-28 2020-01-06 銅電極材料

Country Status (7)

Country Link
US (1) US20210359482A1 (ja)
EP (1) EP3854895B8 (ja)
JP (1) JP7315649B2 (ja)
KR (1) KR102648197B1 (ja)
CN (1) CN113056569B (ja)
TW (1) TWI727586B (ja)
WO (1) WO2020174880A1 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373588A (ja) * 1986-09-17 1988-04-04 Nippon Mining Co Ltd 銅蒸気レ−ザ−用銅材
JP2001274487A (ja) * 2000-03-24 2001-10-05 Toshiba Corp エキシマレーザー装置、露光装置および半導体装置の製造方法
JP2003147474A (ja) * 2001-11-07 2003-05-21 Shin Etsu Chem Co Ltd 耐食性部材及びエキシマレーザ発振装置
WO2010038641A1 (ja) * 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅及び電解による高純度銅の製造方法
JP2015527726A (ja) * 2012-06-07 2015-09-17 サイマー リミテッド ライアビリティ カンパニー レーザチャンバのための耐食電極
JP2016524811A (ja) * 2013-05-03 2016-08-18 ヘレウス マテリアルズ シンガポール ピーティーイー． リミテッド 銅ボンディングワイヤおよびその作製方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033176B2 (ja) * 1980-11-21 1985-08-01 タツタ電線株式会社 導電用銅合金
JPS6175496U (ja) 1984-10-22 1986-05-21
JPH10242553A (ja) 1997-02-28 1998-09-11 Komatsu Ltd レーザのコロナ予備電離電極と同電極を備えたレーザ発振器
JP4104935B2 (ja) * 2001-08-27 2008-06-18 株式会社小松製作所 主放電電極及び主放電電極の製造方法
US7095774B2 (en) * 2001-09-13 2006-08-22 Cymer, Inc. Cathodes for fluorine gas discharge lasers
JP4068944B2 (ja) 2002-10-24 2008-03-26 ギガフォトン株式会社 主放電電極の製造方法
JP4519775B2 (ja) * 2004-01-29 2010-08-04 日鉱金属株式会社 超高純度銅及びその製造方法
JP4750112B2 (ja) * 2005-06-15 2011-08-17 Ｊｘ日鉱日石金属株式会社 超高純度銅及びその製造方法並びに超高純度銅からなるボンディングワイヤ
JP5499933B2 (ja) * 2010-01-12 2014-05-21 三菱マテリアル株式会社 電気銅めっき用含リン銅アノード、その製造方法および電気銅めっき方法
JP6011074B2 (ja) * 2012-01-20 2016-10-19 富士通株式会社 電子装置の製造方法及び電子装置の製造装置
JP5752736B2 (ja) * 2013-04-08 2015-07-22 三菱マテリアル株式会社 スパッタリング用ターゲット
JP5862695B2 (ja) * 2014-01-23 2016-02-16 株式会社明電舎 電極材料の製造方法
JP5876971B2 (ja) * 2014-01-29 2016-03-02 三井金属鉱業株式会社 銅粉
US9724759B2 (en) * 2014-03-04 2017-08-08 Meidensha Corporation Electrode material
JP6090388B2 (ja) * 2015-08-11 2017-03-08 株式会社明電舎 電極材料及び電極材料の製造方法
JP6066007B1 (ja) * 2016-05-10 2017-01-25 日立金属株式会社 精製銅の製造方法及び電線の製造方法
US10141509B2 (en) * 2017-03-30 2018-11-27 International Business Machines Corporation Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodes
JP7454329B2 (ja) * 2017-06-01 2024-03-22 三菱マテリアル株式会社 高純度電気銅板
CN107309513A (zh) * 2017-06-23 2017-11-03 宁波康强微电子技术有限公司 一种伽马电极丝及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373588A (ja) * 1986-09-17 1988-04-04 Nippon Mining Co Ltd 銅蒸気レ−ザ−用銅材
JP2001274487A (ja) * 2000-03-24 2001-10-05 Toshiba Corp エキシマレーザー装置、露光装置および半導体装置の製造方法
JP2003147474A (ja) * 2001-11-07 2003-05-21 Shin Etsu Chem Co Ltd 耐食性部材及びエキシマレーザ発振装置
WO2010038641A1 (ja) * 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅及び電解による高純度銅の製造方法
JP2015527726A (ja) * 2012-06-07 2015-09-17 サイマー リミテッド ライアビリティ カンパニー レーザチャンバのための耐食電極
JP2016524811A (ja) * 2013-05-03 2016-08-18 ヘレウス マテリアルズ シンガポール ピーティーイー． リミテッド 銅ボンディングワイヤおよびその作製方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
加藤 正憲: "高純度銅の特性と用途", 伸銅技術研究会誌, vol. 第35巻, JPN6022051389, 1996, JP, pages 28 - 35, ISSN: 0004939107 *
石川 幸雄，横田 泰利，末繁 由隆，内田和喜雄，一色 実: "高純度銅スパッタ膜の作製と評価", 東北大学素材工学研究所彙報, vol. 第54巻, JPN6022051388, 26 March 1999 (1999-03-26), JP, pages 71 - 78, ISSN: 0004939106 *

Also Published As

Publication number Publication date
CN113056569A (zh) 2021-06-29
EP3854895A4 (en) 2022-03-09
US20210359482A1 (en) 2021-11-18
CN113056569B (zh) 2022-02-11
EP3854895B1 (en) 2023-12-27
TWI727586B (zh) 2021-05-11
KR102648197B1 (ko) 2024-03-18
EP3854895A1 (en) 2021-07-28
WO2020174880A1 (ja) 2020-09-03
KR20210075153A (ko) 2021-06-22
EP3854895B8 (en) 2024-03-20
JP7315649B2 (ja) 2023-07-26
TW202033781A (zh) 2020-09-16

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