JPWO2020136622A5 - - Google Patents

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JPWO2020136622A5
JPWO2020136622A5 JP2021538091A JP2021538091A JPWO2020136622A5 JP WO2020136622 A5 JPWO2020136622 A5 JP WO2020136622A5 JP 2021538091 A JP2021538091 A JP 2021538091A JP 2021538091 A JP2021538091 A JP 2021538091A JP WO2020136622 A5 JPWO2020136622 A5 JP WO2020136622A5
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substantially parallel
parallel lines
laser damage
crystalline material
subsurface laser
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第１の複数の実質的に平行な線を備える第１の表面下レーザ・ダメージ・パターンを有する表面下レーザ・ダメージを形成するために、基板の結晶材料の内部に集束されるレーザの放射を供給し、前記レーザと前記基板との間の横方向相対移動を実行させることと、
前記第１の表面下レーザ・ダメージ・パターンの形成後に、第２の複数の実質的に平行な線を備える第２の表面下レーザ・ダメージ・パターンを有する表面下レーザ・ダメージを形成するために、前記結晶材料の前記内部に集束されるレーザ放射を供給し、前記レーザと前記基板との間の横方向相対移動を実行させることと、を含み、
前記第１の表面下レーザ・ダメージ・パターンは、前記結晶材料の前記内部に、前記第１の複数の実質的に平行な線の線から横方向外向きに伝播する第１の複数のクラックを形成し、
前記第２の表面下レーザ・ダメージ・パターンは、前記結晶材料の前記内部に、前記第２の複数の実質的に平行な線の線から横方向外向きに伝播する第２の複数のクラックを形成し、
前記第２の複数の実質的に平行な線の線は、前記第１の複数の実質的に平行な線の線同士の間に分散され、
前記第２の複数の実質的に平行な線の少なくともいくつかの線は、前記第１の複数の実質的に平行な線のうちのどの線とも交差しない、
結晶材料加工方法。 laser radiation focused within the crystalline material of the substrate to form subsurface laser damage having a first subsurface laser damage pattern comprising a first plurality of substantially parallel lines; providing and effecting lateral relative movement between the laser and the substrate;
to form subsurface laser damage having a second subsurface laser damage pattern comprising a second plurality of substantially parallel lines after forming the first subsurface laser damage pattern; , providing laser radiation focused into the interior of the crystalline material to effect lateral relative movement between the laser and the substrate;
The first subsurface laser damage pattern causes a first plurality of cracks in the interior of the crystalline material propagating laterally outwardly from a line of the first plurality of substantially parallel lines. form,
The second subsurface laser damage pattern causes a second plurality of cracks in the interior of the crystalline material propagating laterally outward from a line of the second plurality of substantially parallel lines. form,
the lines of the second plurality of substantially parallel lines are dispersed between the lines of the first plurality of substantially parallel lines;
at least some of the second plurality of substantially parallel lines do not intersect any of the first plurality of substantially parallel lines;
Crystal material processing method. 前記第２の複数の実質的に平行な線の各線は、前記第１の複数の実質的に平行な線のうちのどの線とも交差しない、請求項１に記載の結晶材料加工方法。 2. The method of claim 1, wherein each line of said second plurality of substantially parallel lines does not intersect any line of said first plurality of substantially parallel lines. 前記第２の複数の実質的に平行な線の各線は、前記第１の複数の実質的に平行な線の隣り合う線の異なる対の間に配置される、請求項１に記載の結晶材料加工方法。 2. The crystalline material of claim 1 , wherein each line of said second plurality of substantially parallel lines is disposed between different pairs of adjacent lines of said first plurality of substantially parallel lines. processing method. 前記結晶材料は六方晶構造を備え、
前記第１の複数の実質的に平行な線の各線および前記第２の複数の実質的に平行な線の各線は、前記六方晶構造の＜１１－２０＞方向に対する垂直方向から±５度以内にあり、かつ前記基板の表面と実質的に平行である、
請求項１に記載の結晶材料加工方法。 said crystalline material having a hexagonal crystal structure;
Each line of the first plurality of substantially parallel lines and each line of the second plurality of substantially parallel lines is within ±5 degrees from a direction perpendicular to the <11-20> direction of the hexagonal crystal structure and substantially parallel to the surface of the substrate;
The method of processing a crystalline material according to claim 1 . 前記第１の複数の実質的に平行な線のうちの少なくともいくつかの隣り合う線の間の間隔は、前記第２の複数の実質的に平行な線のうちの少なくともいくつかの隣り合う線の間の間隔と実質的に同じである、請求項１に記載の結晶材料加工方法。 The spacing between adjacent lines of at least some of said first plurality of substantially parallel lines is the distance between adjacent lines of at least some of said second plurality of substantially parallel lines. 2. The method of processing a crystalline material of claim 1, wherein the spacing between is substantially the same as the spacing between . 前記第１の表面下レーザ・ダメージ・パターンおよび前記第２の表面下レーザ・ダメージ・パターンの形成後に、第３の複数の実質的に平行な線を備える第３の表面下レーザ・ダメージ・パターンを有する表面下レーザ・ダメージを形成するために、前記結晶材料の前記内部に集束されるレーザ放射を供給し、前記レーザと前記基板との間の横方向相対移動を実行させることを更に含み、
前記第３の複数の実質的に平行な線のうちの少なくともいくつかの線は、前記第１の複数の実質的に平行な線および前記第２の複数の実質的に平行な線の線同士の間に分散される、
請求項１に記載の結晶材料加工方法。 a third subsurface laser damage pattern comprising a third plurality of substantially parallel lines after formation of said first subsurface laser damage pattern and said second subsurface laser damage pattern; providing laser radiation focused into the interior of the crystalline material and effecting lateral relative movement between the laser and the substrate to form a subsurface laser damage having
At least some of the third plurality of substantially parallel lines are aligned between the first plurality of substantially parallel lines and the second plurality of substantially parallel lines. distributed between
The method of processing a crystalline material according to claim 1 . 前記第３の複数の実質的に平行な線の各線は、前記第１の複数の実質的に平行な線の１つの線と前記第２の複数の実質的に平行な線の１つの線との間に配置される、請求項６に記載の結晶材料加工方法。 each line of said third plurality of substantially parallel lines comprises one line of said first plurality of substantially parallel lines and one line of said second plurality of substantially parallel lines 7. The crystalline material processing method of claim 6, disposed between 前記基板の前記内部の前記レーザの放射の集束深さは、前記第１、第２、および第３の表面下レーザ・ダメージ・パターンのうちの少なくとも２つの間で、約２ミクロンから約５ミクロンまでの範囲内の距離だけ異なる、請求項６に記載の結晶材料加工方法。 a focal depth of emission of said laser within said interior of said substrate between at least two of said first, second, and third subsurface laser damage patterns from about 2 microns to about 5 microns; 7. The method of processing a crystalline material of claim 6, differing by a distance within the range of . 前記第２の複数のクラックは前記第１の複数のクラックと接続せず、
前記第３の表面下レーザ・ダメージ・パターンは、前記結晶材料の前記内部に、前記第３の複数の実質的に平行な線の線から横方向外向きに伝播する第３の複数のクラックを形成し、前記第３の複数のクラックのうちの少なくともいくつかのクラックは、前記第１の複数のクラックのうちの少なくともいくつかのクラックとおよび前記第２の複数のクラックのうちの少なくともいくつかのクラックと接続する、
請求項６に記載の結晶材料加工方法。 said second plurality of cracks not connecting with said first plurality of cracks;
The third subsurface laser damage pattern causes a third plurality of cracks in the interior of the crystalline material propagating laterally outwardly from a line of the third plurality of substantially parallel lines. forming at least some of the cracks of the third plurality of cracks, at least some of the cracks of the first plurality of cracks and at least some of the cracks of the second plurality of cracks connect with the crack of
The crystalline material processing method according to claim 6 . 前記第３の複数の実質的に平行な線の各線が前記第１の複数の実質的に平行な線のうちの対応する線と前記第２の複数の実質的に平行な線のうちの対応する線との間に配置されて３線グループを形成し、このとき前記第１、第２、および第３の表面下レーザ・ダメージ・パターンは組み合わされて複数の３線グループを形成し、
前記複数の３線グループのうちの１つまたは複数の３線グループについて、前記３線グループは、少なくとも１つの隣り合う３線グループから、前記１つまたは複数の３線グループ中の任意の２つの隣り合う線の間の間隔を上回るグループ間間隔によって隔離される、請求項６に記載の結晶材料加工方法。 each line of said third plurality of substantially parallel lines corresponds to a corresponding line of said first plurality of substantially parallel lines and a corresponding line of said second plurality of substantially parallel lines; and the lines forming a three-line group, wherein said first, second, and third subsurface laser damage patterns combine to form a plurality of three-line groups;
For one or more 3-wire groups of the plurality of 3-wire groups, the 3-wire group is selected from at least one adjacent 3-wire group to any two of the one or more 3-wire groups. 7. The method of processing a crystalline material of claim 6 , separated by an inter-group spacing that exceeds the spacing between adjacent lines. 前記結晶材料は六方晶構造を備え、
前記第１の複数の実質的に平行な線の各線、前記第２の複数の実質的に平行な線の各線、前記第３の複数の実質的に平行な線の各線は、前記六方晶構造の＜１１－２０＞方向に対する垂直方向から約１度から約５度までの範囲内の角度だけ偏向している、
請求項６に記載の結晶材料加工方法。 said crystalline material having a hexagonal crystal structure;
Each line of said first plurality of substantially parallel lines, each line of said second plurality of substantially parallel lines, each line of said third plurality of substantially parallel lines each having said hexagonal crystal structure is deflected by an angle within the range of about 1 degree to about 5 degrees from normal to the <11-20> direction of
The crystalline material processing method according to claim 6 . 前記第１、第２、または第３の表面下レーザ・ダメージ・パターンのうちの少なくとも１つと位置合わせされる反復表面下レーザ・ダメージ・パターンを形成するために、前記結晶材料の前記内部に集束されるレーザ放射を供給することを含む、前記第１、第２、または第３の表面下レーザ・ダメージ・パターンのうちの少なくとも１つの反復行程を実行することを更に含み、前記反復表面下ダメージ・パターンは、前記第１、第２、または第３の表面下レーザ・ダメージ・パターンのうちの少なくとも１つとは異なる、前記結晶材料の表面に対する深さを中心とする、focused into the interior of the crystalline material to form a repeating subsurface laser damage pattern aligned with at least one of the first, second, or third subsurface laser damage patterns; and performing a repetitive step of at least one of said first, second, or third subsurface laser damage patterns, said repetitive subsurface damage - the pattern is centered at a depth to the surface of said crystalline material that is different than at least one of said first, second or third subsurface laser damage patterns;
請求項６に記載の結晶材料加工方法。The crystalline material processing method according to claim 6 . 前記第１の複数の実質的に平行な線のうちの少なくともいくつかの線は、前記結晶材料の前記内部で、前記第２の複数の実質的に平行な線のうちの少なくともいくつかの線と実質的に同じ深さに配置される、請求項１に記載の結晶材料加工方法。 at least some of said first plurality of substantially parallel lines are located within said interior of said crystalline material; 2. The method of processing a crystalline material of claim 1 , wherein the crystalline material processing method is positioned at substantially the same depth as the . 前記基板の表面の少なくとも一部にわたって前記結晶材料の不均一なドーピングを示す条件の存在を検出することであって、前記不均一なドーピングは少なくとも１つの第１のドーピング領域および少なくとも１つの第２のドーピング領域を含む、検出することと、
前記結晶材料の不均一なドーピングを示す前記条件の検出に応答して、前記第１の表面下レーザ・ダメージ・パターンおよび前記第２の表面下レーザ・ダメージ・パターンの形成中、第１のドーピング領域内に表面下レーザ・ダメージを形成するときに第１の平均出力のレーザ放射を提供するように、および、第２のドーピング領域内に表面下レーザ・ダメージを形成するときに第２の平均出力のレーザ放射を提供するように、レーザ出力を変更することと、
を更に含む、請求項１に記載の結晶材料加工方法。 detecting the presence of a condition indicative of non-uniform doping of the crystalline material over at least a portion of the surface of the substrate, the non-uniform doping comprising at least one first doping region and at least one second doping region; detecting, including a doping region of
a first doping during formation of the first subsurface laser damage pattern and the second subsurface laser damage pattern in response to detecting the condition indicative of non-uniform doping of the crystalline material; to provide a first average power of laser radiation when forming subsurface laser damage in the region and a second average when forming subsurface laser damage in the second doped region; modifying the laser power to provide output laser radiation;
2. The method of processing a crystalline material of claim 1 , further comprising: いずれも前記基板と比較して厚さが低減されているが前記基板と長さおよび幅が実質的に同じである、第１および第２の結晶材料部分が得られるように、前記第１の表面下レーザ・ダメージ・パターンおよび前記第２の表面下レーザ・ダメージ・パターンのうちの少なくとも一方に実質的に沿って、またはこれらの間で、前記結晶材料を破砕することを更に含む、The first and second portions of crystalline material are obtained, both of reduced thickness relative to the substrate, but substantially the same length and width as the substrate. fracturing the crystalline material substantially along or between at least one of a subsurface laser damage pattern and the second subsurface laser damage pattern;
請求項１に記載の結晶材料加工方法。The method of processing a crystalline material according to claim 1. 前記第１または第２の表面下レーザ・ダメージ・パターンのうちの少なくとも一方と位置合わせされる反復表面下レーザ・ダメージ・パターンを形成するために、前記結晶材料の前記内部に集束されるレーザ放射を供給することを含む、前記第１または第２の表面下レーザ・ダメージ・パターンのうちの少なくとも一方の反復行程を実行することを更に含み、前記反復表面下ダメージ・パターンは、前記第１または第２の表面下レーザ・ダメージ・パターンのうちの少なくとも一方とは異なる、前記結晶材料の表面に対する深さを中心とする、
請求項１に記載の方法。 Laser radiation focused into the interior of the crystalline material to form a repeating subsurface laser damage pattern aligned with at least one of the first or second subsurface laser damage patterns. , wherein the repeating step of at least one of the first or second subsurface laser damage patterns comprises applying a centered at a depth to the surface of the crystalline material different from at least one of the second subsurface laser damage patterns;
The method of claim 1 . 最初の複数の実質的に平行な線を備える最初の表面下レーザ・ダメージ・パターンを有する表面下レーザ・ダメージを形成するために、結晶材料の基板の内部に集束されるレーザの放射を供給し、前記レーザと前記基板との間の横方向相対移動を実行させることと、
次の複数の実質的に平行な線を備える次の表面下レーザ・ダメージ・パターンを有する表面下レーザ・ダメージを形成するために、前記基板の前記内部に集束される前記レーザの放射を供給し、前記レーザと前記基板との間の横方向相対移動を実行させることと、を含み、
前記最初の複数の実質的に平行な線の線は、前記次の複数の実質的に平行な線の線と非平行であり、
前記次の複数の実質的に平行な線における線の角度方向と前記最初の複数の実質的に平行な線における線の角度方向との差は１０度以下であり、
前記次の複数の実質的に平行な線のうちの少なくともいくつかの線は、前記最初の複数の実質的に平行な線のうちのどの線とも交差しない、
結晶材料加工方法。 providing focused laser radiation within a substrate of crystalline material to form a subsurface laser damage having an initial subsurface laser damage pattern comprising an initial plurality of substantially parallel lines; , effecting a lateral relative movement between the laser and the substrate;
providing said laser radiation focused into said interior of said substrate to form a subsurface laser damage having a next subsurface laser damage pattern comprising a plurality of substantially parallel lines; , effecting lateral relative movement between the laser and the substrate;
the lines of the first plurality of substantially parallel lines are non-parallel to the lines of the next plurality of substantially parallel lines;
the difference between the angular orientation of the lines in the next plurality of substantially parallel lines and the angular orientation of the lines in the first plurality of substantially parallel lines is no more than 10 degrees;
at least some of the next plurality of substantially parallel lines do not intersect any of the first plurality of substantially parallel lines;
Crystal material processing method. 前記次の複数の実質的に平行な線の各線は、前記最初の複数の実質的に平行な線のうちのどの線とも交差しない、請求項１７に記載の結晶材料加工方法。 18. The method of processing a crystalline material of claim 17, wherein each line of said next plurality of substantially parallel lines does not intersect any of said first plurality of substantially parallel lines. 前記次の複数の実質的に平行な線の線は、前記最初の複数の実質的に平行な線の線同士の間に分散される、請求項１７に記載の結晶材料加工方法。 18. The method of processing a crystalline material of claim 17 , wherein lines of said next plurality of substantially parallel lines are dispersed between lines of said first plurality of substantially parallel lines. 前記最初の表面下レーザ・ダメージ・パターンは、第１の複数の実質的に平行な線を含む第１の表面下レーザ・ダメージ・パターンと、第２の複数の実質的に平行な線を含む第２の表面下レーザ・ダメージ・パターンと、を備え、
前記次のレーザ・ダメージ・パターンは、第３の複数の実質的に平行な線を含む第３の表面下レーザ・ダメージ・パターンを備え、
前記第３の複数の実質的に平行な線の線は、前記第１の複数の実質的に平行な線および前記第２の複数の実質的に平行な線の線同士の間に分散され、前記第３の複数の実質的に平行な線の各線は、前記第１の複数の実質的に平行な線のうちの１つの線と前記第２の複数の実質的に平行な線のうちの１つの線との間に配置される、
請求項１７に記載の結晶材料加工方法。 The first subsurface laser damage pattern includes a first subsurface laser damage pattern including a first plurality of substantially parallel lines and a second plurality of substantially parallel lines. a second subsurface laser damage pattern;
said next laser damage pattern comprising a third subsurface laser damage pattern comprising a third plurality of substantially parallel lines;
lines of said third plurality of substantially parallel lines are dispersed between lines of said first plurality of substantially parallel lines and said second plurality of substantially parallel lines; Each line of said third plurality of substantially parallel lines comprises one line of said first plurality of substantially parallel lines and one line of said second plurality of substantially parallel lines. placed between a line and
18. The method of processing a crystalline material according to claim 17. 前記第１の複数の実質的に平行な線の各線は、前記第２の複数の実質的に平行な線のうちの最も近い線から少なくとも１００ミクロン分離されている、請求項２０に記載の結晶材料加工方法。 21. The crystal of claim 20 , wherein each line of said first plurality of substantially parallel lines is separated from a nearest line of said second plurality of substantially parallel lines by at least 100 microns. Material processing method. 前記第１の表面下レーザ・ダメージ・パターンは、前記結晶材料の前記内部に、前記第１の複数の実質的に平行な線の線から横方向外向きに伝播する第１の複数のクラックを備え、
前記第２の表面下レーザ・ダメージ・パターンは、前記結晶材料の前記内部に、前記第２の複数の実質的に平行な線の線から横方向外向きに伝播する第２の複数のクラックを備え、前記第２の複数のクラックは前記第１の複数のクラックと接続せず、
前記第３の表面下レーザ・ダメージ・パターンは、前記結晶材料の前記内部に、前記第３の複数の実質的に平行な線の線から横方向外向きに伝播する第３の複数のクラックを備え、前記第３の複数のクラックのうちの少なくともいくつかのクラックは、前記第１の複数のクラックのうちの少なくともいくつかのクラックとおよび前記第２の複数のクラックのうちの少なくともいくつかのクラックと接続する、
請求項２０に記載の結晶材料加工方法。 The first subsurface laser damage pattern causes a first plurality of cracks in the interior of the crystalline material propagating laterally outwardly from a line of the first plurality of substantially parallel lines. prepared,
The second subsurface laser damage pattern causes a second plurality of cracks in the interior of the crystalline material propagating laterally outward from a line of the second plurality of substantially parallel lines. wherein the second plurality of cracks are not connected with the first plurality of cracks;
The third subsurface laser damage pattern causes a third plurality of cracks in the interior of the crystalline material propagating laterally outwardly from a line of the third plurality of substantially parallel lines. wherein at least some cracks of the third plurality of cracks comprise at least some cracks of the first plurality of cracks and at least some cracks of the second plurality of cracks connect with crack,
21. The method of processing a crystalline material according to claim 20 . 互いに重なり合わない複数のエリアを備える結晶材料を加工するための方法であって、
前記結晶材料の前記複数のエリアの各エリア内に第１の複数の表面下レーザ・ダメージ領域を形成することと、
前記結晶材料の前記複数のエリアの各エリア内に第２の複数の表面下レーザ・ダメージ領域を形成することとであって、前記第１の複数の表面下レーザ・ダメージ領域のうちの少なくともいくつかの表面下レーザ・ダメージ領域は、前記第２の複数の表面下レーザ・ダメージ領域の表面下レーザ・ダメージ領域と交差せず、前記第１の複数の表面下レーザ・ダメージ領域は第１の複数の実質的に平行な線を備え、前記第２の複数の表面下レーザ・ダメージ領域は第２の複数の実質的に平行な線を備える、形成することと、
前記第１の複数のまたは第２の複数の表面下レーザ・ダメージ領域のうちの少なくとも一方と位置合わせされる反復表面下レーザ・ダメージ領域を形成するために、前記結晶材料の前記内部に集束されるレーザ放射を供給することを含む、前記結晶材料の前記複数のエリアの各エリア内に前記第１の複数のまたは第２の複数の表面下レーザ・ダメージ領域のうちの少なくとも一方を形成する反復行程を実行することであって、前記反復表面下ダメージ領域は、前記第１の複数のまたは第２の複数のレーザ・ダメージ領域のうちの少なくとも一方とは異なる、前記結晶材料の表面に対する深さを中心とする、実行することと、を含む、方法。 A method for processing a crystalline material comprising a plurality of non-overlapping areas, comprising:
forming a first plurality of subsurface laser damage regions within each of the plurality of areas of the crystalline material;
forming a second plurality of subsurface laser damage regions within each of said plurality of areas of said crystalline material, wherein at least some of said first plurality of subsurface laser damage regions. The subsurface laser damage regions do not intersect the subsurface laser damage regions of the second plurality of subsurface laser damage regions, and the first plurality of subsurface laser damage regions are in the first subsurface laser damage region. forming a plurality of substantially parallel lines, the second plurality of subsurface laser damage regions comprising a second plurality of substantially parallel lines;
focused into the interior of the crystalline material to form repetitive subsurface laser damage regions aligned with at least one of the first or second plurality of subsurface laser damage regions; forming at least one of the first plurality or the second plurality of subsurface laser damage regions in each of the plurality of areas of the crystalline material, comprising: performing a process, wherein the repetitive subsurface damage regions are at a different depth to the surface of the crystalline material than at least one of the first plurality or the second plurality of laser damage regions; A method that revolves around and includes performing. 前記第２の複数の実質的に平行な線の各線は、前記第１の複数の実質的に平行な線のうちのどの線とも交差しない、請求項２３に記載の方法。 24. The method of claim 23 , wherein each line of said second plurality of substantially parallel lines does not intersect any line of said first plurality of substantially parallel lines. 前記第１の複数の表面下レーザ・ダメージ領域および前記第２の表面下レーザ・ダメージ領域の形成後に、前記結晶材料の前記複数のエリアの各エリア内に第３の複数の表面下レーザ・ダメージ領域を形成することを更に含み、
前記第３の複数の表面下レーザ・ダメージ領域は第３の複数の実質的に平行な線を備え、
前記第３の複数の実質的に平行な線のうちの少なくともいくつかの線は、前記第１の複数の実質的に平行な線および前記第２の複数の実質的に平行な線の線同士の間に分散される、
請求項２３に記載の方法。 forming a third plurality of subsurface laser damage regions in each of the plurality of areas of the crystalline material after forming the first plurality of subsurface laser damage regions and the second subsurface laser damage regions; further comprising forming a region;
said third plurality of subsurface laser damage regions comprising a third plurality of substantially parallel lines;
At least some of the third plurality of substantially parallel lines are aligned between the first plurality of substantially parallel lines and the second plurality of substantially parallel lines. distributed between
24. The method of claim 23 . 前記第１の複数の表面下レーザ・ダメージ領域は、前記結晶材料の前記内部に、前記第１の複数の実質的に平行な線の線から横方向外向きに伝播する第１の複数のクラックを備え、
前記第２の複数の表面下レーザ・ダメージ領域は、前記結晶材料の前記内部に、前記第２の複数の実質的に平行な線の線から横方向外向きに伝播する第２の複数のクラックを備える、
請求項２３に記載の方法。 The first plurality of subsurface laser damage regions comprises a first plurality of cracks propagating laterally outwardly from the first plurality of substantially parallel lines in the interior of the crystalline material. with
The second plurality of subsurface laser damage regions comprises a second plurality of cracks propagating laterally outwardly from the second plurality of substantially parallel lines in the interior of the crystalline material. comprising
24. The method of claim 23 . 前記結晶材料の前記複数のエリアの各エリア内に前記第１の複数のまたは第２の複数の表面下レーザ・ダメージ領域のうちの少なくとも一方を形成する反復行程を前記実行することは、
前記結晶材料の前記複数のエリアの各エリア内に前記第１の複数および前記第２の複数の表面下レーザ・ダメージ領域を形成する反復行程を実行することを含む、請求項２３に記載の方法。 said performing a repetitive step of forming at least one of said first plurality or said second plurality of subsurface laser damage regions in each of said plurality of areas of said crystalline material;
24. The method of claim 23 , comprising performing iterative steps of forming said first plurality and said second plurality of subsurface laser damage regions in each of said plurality of areas of said crystalline material. . 互いに重なり合わない複数のエリアを備える結晶材料を加工するための方法であって、
分散された表面下レーザ・ダメージ領域を形成するために、前記複数のエリアの各エリアにわたって第１および第２の複数の表面下レーザ・ダメージ領域を連続的に形成することであって、前記第１の複数の表面下レーザ・ダメージ領域のうちの少なくともいくつかの表面下レーザ・ダメージ領域は、前記第２の複数の表面下レーザ・ダメージ領域の表面下レーザ・ダメージ領域と交差せず、前記第１の複数の表面下レーザ・ダメージ領域は第１の複数の実質的に平行な線を備え、前記第２の複数の表面下レーザ・ダメージ領域は第２の複数の実質的に平行な線を備える、形成することと、
前記第１の複数の表面下レーザ・ダメージ領域および前記第２の表面下レーザ・ダメージ領域の形成後に、前記結晶材料の前記複数のエリアの各エリア内に第３の複数の表面下レーザ・ダメージ領域を形成することと、を含み、
前記第３の複数の表面下レーザ・ダメージ領域は第３の複数の実質的に平行な線を備え、
前記第３の複数の実質的に平行な線のうちの少なくともいくつかの線は、前記第１の複数の実質的に平行な線および前記第２の複数の実質的に平行な線の線同士の間に分散される、方法。 A method for processing a crystalline material comprising a plurality of non-overlapping areas, comprising:
continuously forming a first and a second plurality of subsurface laser damage regions across each of the plurality of areas to form distributed subsurface laser damage regions; at least some subsurface laser damage regions of the one plurality of subsurface laser damage regions do not intersect subsurface laser damage regions of the second plurality of subsurface laser damage regions ; a first plurality of subsurface laser damage regions comprising a first plurality of substantially parallel lines and said second plurality of subsurface laser damage regions comprising a second plurality of substantially parallel lines; comprising, forming
forming a third plurality of subsurface laser damage regions in each of the plurality of areas of the crystalline material after forming the first plurality of subsurface laser damage regions and the second subsurface laser damage regions; forming a region;
said third plurality of subsurface laser damage regions comprising a third plurality of substantially parallel lines;
At least some of the third plurality of substantially parallel lines are aligned between the first plurality of substantially parallel lines and the second plurality of substantially parallel lines. A method that is distributed between 前記第２の複数の実質的に平行な線の各線は、前記第１の複数の実質的に平行な線の隣り合う線の異なる対の間に配置される、請求項２８に記載の方法。 29. The method of claim 28 , wherein each line of said second plurality of substantially parallel lines is disposed between different pairs of adjacent lines of said first plurality of substantially parallel lines. 前記複数のエリアは少なくとも３つのエリアを備える、請求項２８に記載の方法。 29. The method of Claim 28 , wherein the plurality of areas comprises at least three areas.
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