JPWO2020130054A1 - レーザ加工方法、半導体部材製造方法及びレーザ加工装置 - Google Patents
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- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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Abstract
Description
[レーザ加工装置の構成]
[第1実施形態のレーザ加工方法及び半導体部材製造方法]
[第2実施形態のレーザ加工方法及び半導体部材製造方法]
[変形例]
Claims (13)
- 半導体対象物の内部において前記半導体対象物の表面に対向する仮想面に沿って、前記半導体対象物を切断するためのレーザ加工方法であって、
前記表面から前記半導体対象物の内部にレーザ光を入射させることにより、前記仮想面に沿って複数の第1改質スポットを形成する第1工程と、
前記表面から前記半導体対象物の内部にレーザ光を入射させることにより、前記複数の第1改質スポットに重ならないように、前記仮想面に沿って複数の第2改質スポットを形成する第2工程と、を備える、レーザ加工方法。 - 前記第2工程においては、前記複数の第1改質スポットからそれぞれ延びる複数の亀裂に重ならないように、前記仮想面に沿って前記複数の第2改質スポットを形成する、請求項1に記載のレーザ加工方法。
- 前記第2工程においては、前記複数の第2改質スポットを形成した後に、前記表面から前記半導体対象物の内部にレーザ光を入射させることにより、前記複数の第1改質スポット及び前記複数の第2改質スポットに重ならないように、前記仮想面に沿って複数の第3改質スポットを形成する、請求項1又は2に記載のレーザ加工方法。
- 前記第1工程においては、前記複数の第1改質スポットからそれぞれ延びる複数の亀裂が互いに繋がらないように、前記複数の第1改質スポットを形成する、請求項1〜3のいずれか一項に記載のレーザ加工方法。
- 前記第1工程においては、パルス発振された前記レーザ光の集光点を前記仮想面に沿って移動させることにより、前記複数の第1改質スポットとして複数列の第1改質スポットを形成し、
前記第2工程においては、パルス発振された前記レーザ光の集光点を前記複数列の第1改質スポットの列間において前記仮想面に沿って移動させることにより、前記複数の第2改質スポットとして複数列の第2改質スポットを形成する、請求項1〜4のいずれか一項に記載のレーザ加工方法。 - 前記半導体対象物の材料は、ガリウムを含む、請求項1〜5のいずれか一項に記載のレーザ加工方法。
- 前記半導体対象物の材料は、窒化ガリウムを含む、請求項6に記載のレーザ加工方法。
- 請求項1〜7のいずれか一項に記載のレーザ加工方法が備える前記第1工程及び前記第2工程と、
前記仮想面に渡る亀裂を境界として前記半導体対象物から半導体部材を取得する第3工程と、を備える、半導体部材製造方法。 - 前記仮想面は、前記表面に対向する方向に並ぶように複数設定されている、請求項8に記載の半導体部材製造方法。
- 前記半導体対象物は、半導体インゴットであり、
前記半導体部材は、半導体ウェハである、請求項9に記載の半導体部材製造方法。 - 前記仮想面は、前記表面が延在する方向に並ぶように複数設定されている、請求項8に記載の半導体部材製造方法。
- 前記半導体対象物は、半導体ウェハであり、
前記半導体部材は、半導体デバイスである、請求項11に記載の半導体部材製造方法。 - 半導体対象物の内部において前記半導体対象物の表面に対向する仮想面に沿って、前記半導体対象物を切断するためのレーザ加工装置であって、
前記半導体対象物を支持するステージと、
前記表面から前記半導体対象物の内部にレーザ光を入射させることにより、前記仮想面に沿って複数の第1改質スポット及び複数の第2改質スポットを形成するレーザ照射ユニットと、を備え、
前記レーザ照射ユニットは、前記仮想面に沿って前記複数の第1改質スポットを形成し、前記複数の第1改質スポットを形成した後に、前記複数の第1改質スポットに重ならないように、前記仮想面に沿って前記複数の第2改質スポットを形成する、レーザ加工装置。
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JP2004259846A (ja) * | 2003-02-25 | 2004-09-16 | Ogura Jewel Ind Co Ltd | 基板上形成素子の分離方法 |
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US10794872B2 (en) | 2015-11-16 | 2020-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Acoustic measurement of fabrication equipment clearance |
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US20220093463A1 (en) | 2022-03-24 |
US20220055156A1 (en) | 2022-02-24 |
WO2020130054A1 (ja) | 2020-06-25 |
TW202105482A (zh) | 2021-02-01 |
JPWO2020130055A1 (ja) | 2021-11-04 |
CN113260492A (zh) | 2021-08-13 |
WO2020130055A1 (ja) | 2020-06-25 |
TW202105481A (zh) | 2021-02-01 |
KR20210104768A (ko) | 2021-08-25 |
KR20210104767A (ko) | 2021-08-25 |
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