JPWO2020128743A1 - - Google Patents

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Publication number
JPWO2020128743A1
JPWO2020128743A1 JP2020560642A JP2020560642A JPWO2020128743A1 JP WO2020128743 A1 JPWO2020128743 A1 JP WO2020128743A1 JP 2020560642 A JP2020560642 A JP 2020560642A JP 2020560642 A JP2020560642 A JP 2020560642A JP WO2020128743 A1 JPWO2020128743 A1 JP WO2020128743A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2020560642A
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Japanese (ja)
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JP7526671B2 (ja
JPWO2020128743A5 (https=
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Publication of JPWO2020128743A5 publication Critical patent/JPWO2020128743A5/ja
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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • G01R31/382Arrangements for monitoring battery or accumulator variables, e.g. SoC
    • G01R31/3828Arrangements for monitoring battery or accumulator variables, e.g. SoC using current integration
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • G01R31/392Determining battery ageing or deterioration, e.g. state of health
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/02Circuit arrangements for charging or discharging batteries or for supplying loads from batteries for charging batteries from AC mains by converters
    • H02J7/04Regulation of charging current or voltage
    • H02J7/06Regulation of charging current or voltage using discharge tubes or semiconductor devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • G01R19/16542Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies for batteries
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16566Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • G01R31/382Arrangements for monitoring battery or accumulator variables, e.g. SoC
    • G01R31/3842Arrangements for monitoring battery or accumulator variables, e.g. SoC combining voltage and current measurements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • G01R31/396Acquisition or processing of data for testing or for monitoring individual cells or groups of cells within a battery
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44Methods for charging or discharging
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/80Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including monitoring or indicating arrangements
    • H02J7/84Control of state of health [SOH]
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/90Regulation of charging or discharging current or voltage
    • H02J7/933Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M2010/4271Battery management systems including electronic circuits, e.g. control of current or voltage to keep battery in healthy state, cell balancing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2220/00Batteries for particular applications
    • H01M2220/20Batteries in motive systems, e.g. vehicle, ship, plane
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/60Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including safety or protection arrangements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Secondary Cells (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Medical Informatics (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2020560642A 2018-12-20 2019-12-13 半導体装置および電池パック Active JP7526671B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018238529 2018-12-20
JP2018238529 2018-12-20
JP2019123810 2019-07-02
JP2019123810 2019-07-02
PCT/IB2019/060740 WO2020128743A1 (ja) 2018-12-20 2019-12-13 半導体装置および電池パック

Publications (3)

Publication Number Publication Date
JPWO2020128743A1 true JPWO2020128743A1 (https=) 2020-06-25
JPWO2020128743A5 JPWO2020128743A5 (https=) 2022-12-13
JP7526671B2 JP7526671B2 (ja) 2024-08-01

Family

ID=71100422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020560642A Active JP7526671B2 (ja) 2018-12-20 2019-12-13 半導体装置および電池パック

Country Status (5)

Country Link
US (1) US11988720B2 (https=)
JP (1) JP7526671B2 (https=)
KR (1) KR102930487B1 (https=)
CN (1) CN113196546A (https=)
WO (1) WO2020128743A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020174299A1 (ja) 2019-02-25 2020-09-03 株式会社半導体エネルギー研究所 二次電池の保護回路及び二次電池の異常検知システム
US20220368149A1 (en) * 2019-11-01 2022-11-17 Semiconductor Energy Laboratory Co., Ltd. Power storage device and operation method of power storage device
PL442076A1 (pl) * 2022-08-23 2024-02-26 Waven Spółka Z Ograniczoną Odpowiedzialnością Urządzenie magazynujące energię elektryczną ładowane bezprzewodowo
CN115877210B (zh) * 2022-12-08 2023-07-21 青岛艾测科技有限公司 一种保压可调容性负载绝缘检测方法、装置和设备
CN116756638B (zh) * 2023-08-17 2023-11-14 广东电网有限责任公司汕头供电局 电动车用电负荷需求检测方法、装置、设备及存储介质

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054413A (ja) * 2009-09-01 2011-03-17 Nissan Motor Co Ltd 二次電池の劣化状態判別システム、および二次電池の劣化状態判別方法
WO2016136788A1 (ja) * 2015-02-24 2016-09-01 学校法人同志社 電池劣化診断方法および電池劣化診断装置

Family Cites Families (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218607A (en) 1989-06-23 1993-06-08 Kabushiki Kaisha Toshiba Computer having a resume function and operable on an internal power source
US5378912A (en) 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
US5498988A (en) 1994-11-25 1996-03-12 Motorola, Inc. Low power flip-flop circuit and method thereof
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
GB9614800D0 (en) 1996-07-13 1996-09-04 Plessey Semiconductors Ltd Programmable logic arrays
US6046606A (en) 1998-01-21 2000-04-04 International Business Machines Corporation Soft error protected dynamic circuit
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
US6639827B2 (en) 2002-03-12 2003-10-28 Intel Corporation Low standby power using shadow storage
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US6989702B2 (en) 2002-07-11 2006-01-24 Texas Instruments Incorporated Retention register with normal functionality independent of retention power supply
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
KR100519787B1 (ko) 2002-11-07 2005-10-10 삼성전자주식회사 슬립 모드에서 데이터 보존이 가능한 mtcmos플립플롭 회로
US6775180B2 (en) 2002-12-23 2004-08-10 Intel Corporation Low power state retention
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
KR20070116888A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
EP2453481B1 (en) 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
BRPI0517560B8 (pt) 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
DE102004055006B4 (de) 2004-11-15 2012-09-13 Infineon Technologies Ag Flipflop mit zusätzlicher Zustandsspeicherung bei Abschaltung
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
US20070085585A1 (en) 2005-10-13 2007-04-19 Arm Limited Data retention in operational and sleep modes
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR20090115222A (ko) 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4954639B2 (ja) 2006-08-25 2012-06-20 パナソニック株式会社 ラッチ回路及びこれを備えた半導体集積回路
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP4224094B2 (ja) 2006-09-27 2009-02-12 株式会社東芝 半導体集積回路装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
US7868677B2 (en) 2006-12-28 2011-01-11 Stmicroelectronics Pvt. Ltd. Low power flip-flop circuit
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7626434B2 (en) 2007-03-30 2009-12-01 Intel Corporation Low leakage state retention circuit
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
US8289060B2 (en) 2007-06-22 2012-10-16 Freescale Semiconductor, Inc. Pulsed state retention power gating flip-flop
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
US7791389B2 (en) 2008-01-30 2010-09-07 Freescale Semiconductor, Inc. State retaining power gated latch and method therefor
TWI508282B (zh) 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
KR102437444B1 (ko) 2008-11-21 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI489628B (zh) 2009-04-02 2015-06-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI476917B (zh) 2009-04-16 2015-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI397184B (zh) 2009-04-29 2013-05-21 Ind Tech Res Inst 氧化物半導體薄膜電晶體
JP4966998B2 (ja) 2009-06-18 2012-07-04 パナソニック株式会社 充電制御回路、電池パック、及び充電システム
EP2887395B1 (en) 2009-11-20 2019-05-08 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US8242826B2 (en) 2010-04-12 2012-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Retention flip-flop
JP5755443B2 (ja) 2010-12-28 2015-07-29 ルネサスエレクトロニクス株式会社 半導体装置
TWI525614B (zh) 2011-01-05 2016-03-11 半導體能源研究所股份有限公司 儲存元件、儲存裝置、及信號處理電路
US8493120B2 (en) 2011-03-10 2013-07-23 Arm Limited Storage circuitry and method with increased resilience to single event upsets
US10298043B2 (en) 2011-12-23 2019-05-21 Semiconductor Energy Laboratory Co., Ltd. Method for charging lithium ion secondary battery and battery charger
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
US9087573B2 (en) 2012-03-13 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method thereof
US20130265010A1 (en) 2012-04-06 2013-10-10 Semiconductor Energy Laboratory Co., Ltd. Protective circuit module and battery pack
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN104769842B (zh) 2012-11-06 2017-10-31 株式会社半导体能源研究所 半导体装置以及其驱动方法
JP6143492B2 (ja) 2013-02-26 2017-06-07 エスアイアイ・セミコンダクタ株式会社 充放電制御回路、充放電制御装置及びバッテリ装置
JP6410496B2 (ja) 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 マルチゲート構造のトランジスタ
JP6767769B2 (ja) * 2016-04-27 2020-10-14 ラピスセミコンダクタ株式会社 半導体装置、電池監視システム、及び検出方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054413A (ja) * 2009-09-01 2011-03-17 Nissan Motor Co Ltd 二次電池の劣化状態判別システム、および二次電池の劣化状態判別方法
WO2016136788A1 (ja) * 2015-02-24 2016-09-01 学校法人同志社 電池劣化診断方法および電池劣化診断装置

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