JPWO2020074412A5 - - Google Patents

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Publication number
JPWO2020074412A5
JPWO2020074412A5 JP2021519171A JP2021519171A JPWO2020074412A5 JP WO2020074412 A5 JPWO2020074412 A5 JP WO2020074412A5 JP 2021519171 A JP2021519171 A JP 2021519171A JP 2021519171 A JP2021519171 A JP 2021519171A JP WO2020074412 A5 JPWO2020074412 A5 JP WO2020074412A5
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JP
Japan
Prior art keywords
target
bias
measurements
asymmetry
patterning device
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JP2021519171A
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Japanese (ja)
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JP2022504488A5 (https=
JP2022504488A (ja
JP7179979B2 (ja
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Priority claimed from PCT/EP2019/077016 external-priority patent/WO2020074412A1/en
Publication of JP2022504488A publication Critical patent/JP2022504488A/ja
Publication of JP2022504488A5 publication Critical patent/JP2022504488A5/ja
Publication of JPWO2020074412A5 publication Critical patent/JPWO2020074412A5/ja
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JP2021519171A 2018-10-08 2019-10-07 メトトロジ方法、パターニングデバイス、装置及びコンピュータプログラム Active JP7179979B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18199182 2018-10-08
EP18199182.9 2018-10-08
PCT/EP2019/077016 WO2020074412A1 (en) 2018-10-08 2019-10-07 Metrology method, patterning device, apparatus and computer program

Publications (4)

Publication Number Publication Date
JP2022504488A JP2022504488A (ja) 2022-01-13
JP2022504488A5 JP2022504488A5 (https=) 2022-07-19
JPWO2020074412A5 true JPWO2020074412A5 (https=) 2022-07-19
JP7179979B2 JP7179979B2 (ja) 2022-11-29

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JP2021519171A Active JP7179979B2 (ja) 2018-10-08 2019-10-07 メトトロジ方法、パターニングデバイス、装置及びコンピュータプログラム

Country Status (7)

Country Link
US (2) US10996570B2 (https=)
JP (1) JP7179979B2 (https=)
KR (1) KR102616712B1 (https=)
CN (1) CN113196172B (https=)
IL (1) IL282017B2 (https=)
TW (1) TWI711894B (https=)
WO (1) WO2020074412A1 (https=)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
CN113196172B (zh) 2018-10-08 2024-08-09 Asml荷兰有限公司 量测方法、图案形成装置、设备和计算机程序
TWI734284B (zh) * 2018-12-04 2021-07-21 荷蘭商Asml荷蘭公司 用於判定微影製程之效能參數之目標
EP4111180A1 (en) * 2020-02-27 2023-01-04 Shenzhen Xpectvision Technology Co., Ltd. Method of phase contrast imaging
US12276921B2 (en) * 2020-05-07 2025-04-15 Asml Netherlands B.V. Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
US11521874B2 (en) * 2020-09-30 2022-12-06 Kla Corporation Systems and methods for determining measurement location in semiconductor wafer metrology
CN113655695B (zh) * 2021-09-02 2023-11-07 西华大学 一种基于介质微球超分辨成像的复合光刻对准系统及方法
EP4619823A1 (en) 2022-11-14 2025-09-24 ASML Netherlands B.V. Simulating an electromagnetic response of a semiconductor structure for diffraction based optical metrology
US20250297955A1 (en) * 2024-03-25 2025-09-25 Kla Corporation Scanning diffraction based overlay scatterometry

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US7528941B2 (en) * 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036597A1 (nl) 2008-02-29 2009-09-01 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, and device manufacturing method.
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WO2010025793A1 (en) * 2008-09-08 2010-03-11 Asml Netherlands B.V. A substrate, a method of measuring a property, an inspection apparatus and a lithographic apparatus
NL2004094A (en) 2009-02-11 2010-08-12 Asml Netherlands Bv Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method.
NL2005162A (en) 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
CN102483582B (zh) 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
NL2007425A (en) 2010-11-12 2012-05-15 Asml Netherlands Bv Metrology method and apparatus, and device manufacturing method.
KR101761735B1 (ko) 2012-03-27 2017-07-26 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
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JP6716779B2 (ja) 2016-07-21 2020-07-01 エーエスエムエル ネザーランズ ビー.ブイ. ターゲットの測定方法、基板、計測装置およびリソグラフィ装置
CN110140087B (zh) * 2016-11-10 2021-08-13 Asml荷兰有限公司 使用叠层差异的设计和校正
JP2020519928A (ja) 2017-05-08 2020-07-02 エーエスエムエル ネザーランズ ビー.ブイ. 構造を測定する方法、検査装置、リソグラフィシステム、及びデバイス製造方法
US10473460B2 (en) * 2017-12-11 2019-11-12 Kla-Tencor Corporation Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals
CN113196172B (zh) 2018-10-08 2024-08-09 Asml荷兰有限公司 量测方法、图案形成装置、设备和计算机程序

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