JPWO2020074412A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2020074412A5 JPWO2020074412A5 JP2021519171A JP2021519171A JPWO2020074412A5 JP WO2020074412 A5 JPWO2020074412 A5 JP WO2020074412A5 JP 2021519171 A JP2021519171 A JP 2021519171A JP 2021519171 A JP2021519171 A JP 2021519171A JP WO2020074412 A5 JPWO2020074412 A5 JP WO2020074412A5
- Authority
- JP
- Japan
- Prior art keywords
- target
- bias
- measurements
- asymmetry
- patterning device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 37
- 238000005259 measurement Methods 0.000 claims description 35
- 238000000059 patterning Methods 0.000 claims description 27
- 238000001459 lithography Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000004590 computer program Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP18199182 | 2018-10-08 | ||
| EP18199182.9 | 2018-10-08 | ||
| PCT/EP2019/077016 WO2020074412A1 (en) | 2018-10-08 | 2019-10-07 | Metrology method, patterning device, apparatus and computer program |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022504488A JP2022504488A (ja) | 2022-01-13 |
| JP2022504488A5 JP2022504488A5 (https=) | 2022-07-19 |
| JPWO2020074412A5 true JPWO2020074412A5 (https=) | 2022-07-19 |
| JP7179979B2 JP7179979B2 (ja) | 2022-11-29 |
Family
ID=63794411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021519171A Active JP7179979B2 (ja) | 2018-10-08 | 2019-10-07 | メトトロジ方法、パターニングデバイス、装置及びコンピュータプログラム |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10996570B2 (https=) |
| JP (1) | JP7179979B2 (https=) |
| KR (1) | KR102616712B1 (https=) |
| CN (1) | CN113196172B (https=) |
| IL (1) | IL282017B2 (https=) |
| TW (1) | TWI711894B (https=) |
| WO (1) | WO2020074412A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113196172B (zh) | 2018-10-08 | 2024-08-09 | Asml荷兰有限公司 | 量测方法、图案形成装置、设备和计算机程序 |
| TWI734284B (zh) * | 2018-12-04 | 2021-07-21 | 荷蘭商Asml荷蘭公司 | 用於判定微影製程之效能參數之目標 |
| EP4111180A1 (en) * | 2020-02-27 | 2023-01-04 | Shenzhen Xpectvision Technology Co., Ltd. | Method of phase contrast imaging |
| US12276921B2 (en) * | 2020-05-07 | 2025-04-15 | Asml Netherlands B.V. | Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method |
| US11521874B2 (en) * | 2020-09-30 | 2022-12-06 | Kla Corporation | Systems and methods for determining measurement location in semiconductor wafer metrology |
| CN113655695B (zh) * | 2021-09-02 | 2023-11-07 | 西华大学 | 一种基于介质微球超分辨成像的复合光刻对准系统及方法 |
| EP4619823A1 (en) | 2022-11-14 | 2025-09-24 | ASML Netherlands B.V. | Simulating an electromagnetic response of a semiconductor structure for diffraction based optical metrology |
| US20250297955A1 (en) * | 2024-03-25 | 2025-09-25 | Kla Corporation | Scanning diffraction based overlay scatterometry |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789124A (en) * | 1996-10-10 | 1998-08-04 | International Business Machines Corporation | Method of monitoring lithographic resist poisoning |
| US6982793B1 (en) * | 2002-04-04 | 2006-01-03 | Nanometrics Incorporated | Method and apparatus for using an alignment target with designed in offset |
| US7046361B1 (en) * | 2002-04-04 | 2006-05-16 | Nanometrics Incorporated | Positioning two elements using an alignment target with a designed offset |
| US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
| US7528941B2 (en) * | 2006-06-01 | 2009-05-05 | Kla-Tencor Technolgies Corporation | Order selected overlay metrology |
| NL1036245A1 (nl) | 2007-12-17 | 2009-06-18 | Asml Netherlands Bv | Diffraction based overlay metrology tool and method of diffraction based overlay metrology. |
| NL1036597A1 (nl) | 2008-02-29 | 2009-09-01 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, and device manufacturing method. |
| NL1036857A1 (nl) | 2008-04-21 | 2009-10-22 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| WO2010025793A1 (en) * | 2008-09-08 | 2010-03-11 | Asml Netherlands B.V. | A substrate, a method of measuring a property, an inspection apparatus and a lithographic apparatus |
| NL2004094A (en) | 2009-02-11 | 2010-08-12 | Asml Netherlands Bv | Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method. |
| NL2005162A (en) | 2009-07-31 | 2011-02-02 | Asml Netherlands Bv | Methods and scatterometers, lithographic systems, and lithographic processing cells. |
| CN102483582B (zh) | 2009-08-24 | 2016-01-20 | Asml荷兰有限公司 | 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底 |
| NL2007425A (en) | 2010-11-12 | 2012-05-15 | Asml Netherlands Bv | Metrology method and apparatus, and device manufacturing method. |
| KR101761735B1 (ko) | 2012-03-27 | 2017-07-26 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| US9958791B2 (en) * | 2013-10-30 | 2018-05-01 | Asml Netherlands B.V. | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| WO2015078669A1 (en) | 2013-11-26 | 2015-06-04 | Asml Netherlands B.V. | Method, apparatus and substrates for lithographic metrology |
| WO2015090838A1 (en) * | 2013-12-19 | 2015-06-25 | Asml Netherlands B.V. | Inspection methods, substrates having metrology targets, lithographic system and device manufacturing method |
| NL2013293A (en) * | 2014-06-02 | 2016-03-31 | Asml Netherlands Bv | Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method. |
| KR102574171B1 (ko) * | 2014-08-29 | 2023-09-06 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법, 타겟 및 기판 |
| NL2017466A (en) * | 2015-09-30 | 2017-04-05 | Asml Netherlands Bv | Metrology method, target and substrate |
| KR20190005955A (ko) * | 2016-05-12 | 2019-01-16 | 에이에스엠엘 네델란즈 비.브이. | 측정치 획득 방법, 프로세스 단계 수행 장치, 계측 장치, 디바이스 제조 방법 |
| KR102640173B1 (ko) * | 2016-06-14 | 2024-02-26 | 삼성전자주식회사 | 회절 기반 오버레이 마크 및 오버레이 계측방법 |
| JP6716779B2 (ja) | 2016-07-21 | 2020-07-01 | エーエスエムエル ネザーランズ ビー.ブイ. | ターゲットの測定方法、基板、計測装置およびリソグラフィ装置 |
| CN110140087B (zh) * | 2016-11-10 | 2021-08-13 | Asml荷兰有限公司 | 使用叠层差异的设计和校正 |
| JP2020519928A (ja) | 2017-05-08 | 2020-07-02 | エーエスエムエル ネザーランズ ビー.ブイ. | 構造を測定する方法、検査装置、リソグラフィシステム、及びデバイス製造方法 |
| US10473460B2 (en) * | 2017-12-11 | 2019-11-12 | Kla-Tencor Corporation | Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals |
| CN113196172B (zh) | 2018-10-08 | 2024-08-09 | Asml荷兰有限公司 | 量测方法、图案形成装置、设备和计算机程序 |
-
2019
- 2019-10-07 CN CN201980077503.XA patent/CN113196172B/zh active Active
- 2019-10-07 IL IL282017A patent/IL282017B2/en unknown
- 2019-10-07 KR KR1020217011371A patent/KR102616712B1/ko active Active
- 2019-10-07 JP JP2021519171A patent/JP7179979B2/ja active Active
- 2019-10-07 US US16/594,613 patent/US10996570B2/en active Active
- 2019-10-07 WO PCT/EP2019/077016 patent/WO2020074412A1/en not_active Ceased
- 2019-10-08 TW TW108136383A patent/TWI711894B/zh active
-
2021
- 2021-05-03 US US17/306,670 patent/US11385553B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022504488A5 (https=) | ||
| TWI572993B (zh) | 用於判定一微影製程之製程窗之方法、相關設備及一電腦程式 | |
| KR102399698B1 (ko) | 리소그래피 프로세스의 파라미터를 측정하는 방법 및 장치, 이러한 방법에서 사용하기 위한 기판 및 패터닝 디바이스 | |
| TWI470374B (zh) | 判定對焦校正之方法、微影處理製造單元及元件製造方法 | |
| TWI704421B (zh) | 半導體製程的量測方法 | |
| TWI667552B (zh) | 用於預測測量方法之效能的方法及裝置、測量方法及裝置 | |
| US6869807B2 (en) | Method and its apparatus for manufacturing semiconductor device | |
| JP4704332B2 (ja) | パラメータ変動性分析による焦点の中心の決定 | |
| CN112485971A (zh) | 用于倾斜装置设计的计量目标设计 | |
| TWI685722B (zh) | 判定週期性結構的邊緣粗糙度參數 | |
| JP5075728B2 (ja) | ウェハ基板を位置合わせするための方法、複数のアライメントターゲット、及びアライメントシステム | |
| US20160103946A1 (en) | Focus measurements using scatterometry metrology | |
| TW201921138A (zh) | 校準聚焦量測之方法、量測方法及度量衡裝置、微影系統及器件製造方法 | |
| TWI646409B (zh) | 位階感測器設備、測量橫跨基板之構形變化的方法、測量關於微影製程的物理參數之變化的方法及微影設備 | |
| CN105934717A (zh) | 可操作以对衬底执行测量操作的设备、光刻设备以及对衬底执行测量操作的方法 | |
| CN113678063A (zh) | 光刻工艺的子场控制和相关设备 | |
| KR20150100780A (ko) | 평가 방법 및 장치, 가공 방법, 및 노광 시스템 | |
| US7865866B2 (en) | Method of inspecting mask using aerial image inspection apparatus | |
| JPWO2020074412A5 (https=) | ||
| KR20190088547A (ko) | 타겟 측정 방법, 계측 장치, 편광자 어셈블리 | |
| KR102546380B1 (ko) | 가변 형상 빔 전자 빔 리소그래피에서의 기본 작은 패턴의 교정 | |
| JP2822229B2 (ja) | 位置合わせ方法及び装置 | |
| TW202136926A (zh) | 對準方法及相關的對準及微影設備 | |
| JP6798017B2 (ja) | 基板にわたってパラメータ変動を修正する処理装置及び方法 | |
| TWI616732B (zh) | 具有感測器之設備及執行目標量測之方法 |