TWI711894B - 度量衡方法、圖案化裝置、設備及電腦程式 - Google Patents

度量衡方法、圖案化裝置、設備及電腦程式 Download PDF

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TWI711894B
TWI711894B TW108136383A TW108136383A TWI711894B TW I711894 B TWI711894 B TW I711894B TW 108136383 A TW108136383 A TW 108136383A TW 108136383 A TW108136383 A TW 108136383A TW I711894 B TWI711894 B TW I711894B
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Taiwan
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target
sub
asymmetry
value
targets
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TW108136383A
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Chinese (zh)
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TW202024805A (zh
Inventor
周子理
尼特許 帕迪
奧格 維克多 茲維爾
派翠克 華那爾
德 斯加 毛瑞斯 凡
納馬拉 艾略特 葛雷德 麥克
包伊夫 亞歷 傑福瑞 丹
保羅 克利絲丁安 希尼
慕拉特 波斯肯特
喬斯特 傑洛恩 澳坦斯
卡司徒夫 巴塔哈爾亞
麥可 庫必司
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荷蘭商Ａｓｍｌ荷蘭公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW108136383A 2018-10-08 2019-10-08 度量衡方法、圖案化裝置、設備及電腦程式 TWI711894B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18199182 2018-10-08
EP18199182.9 2018-10-08

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TW202024805A TW202024805A (zh) 2020-07-01
TWI711894B true TWI711894B (zh) 2020-12-01

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US (2) US10996570B2 (https=)
JP (1) JP7179979B2 (https=)
KR (1) KR102616712B1 (https=)
CN (1) CN113196172B (https=)
IL (1) IL282017B2 (https=)
TW (1) TWI711894B (https=)
WO (1) WO2020074412A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113196172B (zh) 2018-10-08 2024-08-09 Asml荷兰有限公司 量测方法、图案形成装置、设备和计算机程序
TWI734284B (zh) * 2018-12-04 2021-07-21 荷蘭商Ａｓｍｌ荷蘭公司 用於判定微影製程之效能參數之目標
EP4111180A1 (en) * 2020-02-27 2023-01-04 Shenzhen Xpectvision Technology Co., Ltd. Method of phase contrast imaging
US12276921B2 (en) * 2020-05-07 2025-04-15 Asml Netherlands B.V. Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
US11521874B2 (en) * 2020-09-30 2022-12-06 Kla Corporation Systems and methods for determining measurement location in semiconductor wafer metrology
CN113655695B (zh) * 2021-09-02 2023-11-07 西华大学 一种基于介质微球超分辨成像的复合光刻对准系统及方法
EP4619823A1 (en) 2022-11-14 2025-09-24 ASML Netherlands B.V. Simulating an electromagnetic response of a semiconductor structure for diffraction based optical metrology
US20250297955A1 (en) * 2024-03-25 2025-09-25 Kla Corporation Scanning diffraction based overlay scatterometry

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789124A (en) * 1996-10-10 1998-08-04 International Business Machines Corporation Method of monitoring lithographic resist poisoning
US20130258310A1 (en) * 2012-03-27 2013-10-03 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method
TW201523168A (zh) * 2013-11-26 2015-06-16 Ａｓｍｌ荷蘭公司 度量衡方法及裝置、用於此方法中之基板及微影系統及元件製造方法
TW201830161A (zh) * 2016-11-10 2018-08-16 荷蘭商Ａｓｍｌ荷蘭公司 使用堆疊差異之設計及校正

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6982793B1 (en) * 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US7046361B1 (en) * 2002-04-04 2006-05-16 Nanometrics Incorporated Positioning two elements using an alignment target with a designed offset
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7528941B2 (en) * 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036597A1 (nl) 2008-02-29 2009-09-01 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, and device manufacturing method.
NL1036857A1 (nl) 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
WO2010025793A1 (en) * 2008-09-08 2010-03-11 Asml Netherlands B.V. A substrate, a method of measuring a property, an inspection apparatus and a lithographic apparatus
NL2004094A (en) 2009-02-11 2010-08-12 Asml Netherlands Bv Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method.
NL2005162A (en) 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
CN102483582B (zh) 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
NL2007425A (en) 2010-11-12 2012-05-15 Asml Netherlands Bv Metrology method and apparatus, and device manufacturing method.
US9958791B2 (en) * 2013-10-30 2018-05-01 Asml Netherlands B.V. Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method
WO2015090838A1 (en) * 2013-12-19 2015-06-25 Asml Netherlands B.V. Inspection methods, substrates having metrology targets, lithographic system and device manufacturing method
NL2013293A (en) * 2014-06-02 2016-03-31 Asml Netherlands Bv Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method.
KR102574171B1 (ko) * 2014-08-29 2023-09-06 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
NL2017466A (en) * 2015-09-30 2017-04-05 Asml Netherlands Bv Metrology method, target and substrate
KR20190005955A (ko) * 2016-05-12 2019-01-16 에이에스엠엘 네델란즈 비.브이. 측정치 획득 방법, 프로세스 단계 수행 장치, 계측 장치, 디바이스 제조 방법
KR102640173B1 (ko) * 2016-06-14 2024-02-26 삼성전자주식회사 회절 기반 오버레이 마크 및 오버레이 계측방법
JP6716779B2 (ja) 2016-07-21 2020-07-01 エーエスエムエル ネザーランズ ビー．ブイ． ターゲットの測定方法、基板、計測装置およびリソグラフィ装置
JP2020519928A (ja) 2017-05-08 2020-07-02 エーエスエムエル ネザーランズ ビー．ブイ． 構造を測定する方法、検査装置、リソグラフィシステム、及びデバイス製造方法
US10473460B2 (en) * 2017-12-11 2019-11-12 Kla-Tencor Corporation Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals
CN113196172B (zh) 2018-10-08 2024-08-09 Asml荷兰有限公司 量测方法、图案形成装置、设备和计算机程序

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789124A (en) * 1996-10-10 1998-08-04 International Business Machines Corporation Method of monitoring lithographic resist poisoning
US20130258310A1 (en) * 2012-03-27 2013-10-03 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method
TW201523168A (zh) * 2013-11-26 2015-06-16 Ａｓｍｌ荷蘭公司 度量衡方法及裝置、用於此方法中之基板及微影系統及元件製造方法
TW201830161A (zh) * 2016-11-10 2018-08-16 荷蘭商Ａｓｍｌ荷蘭公司 使用堆疊差異之設計及校正

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WO2020074412A1 (en) 2020-04-16
US10996570B2 (en) 2021-05-04
IL282017B1 (en) 2025-07-01
IL282017B2 (en) 2025-11-01
JP2022504488A (ja) 2022-01-13
CN113196172A (zh) 2021-07-30
CN113196172B (zh) 2024-08-09
US20200110342A1 (en) 2020-04-09
US11385553B2 (en) 2022-07-12
US20210255553A1 (en) 2021-08-19
TW202024805A (zh) 2020-07-01
KR102616712B1 (ko) 2023-12-20
JP7179979B2 (ja) 2022-11-29
KR20210061391A (ko) 2021-05-27
IL282017A (en) 2021-05-31

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