KR102616712B1 - 계측 방법, 패터닝 디바이스, 장치 및 컴퓨터 프로그램 - Google Patents

계측 방법, 패터닝 디바이스, 장치 및 컴퓨터 프로그램 Download PDF

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KR102616712B1
KR102616712B1 KR1020217011371A KR20217011371A KR102616712B1 KR 102616712 B1 KR102616712 B1 KR 102616712B1 KR 1020217011371 A KR1020217011371 A KR 1020217011371A KR 20217011371 A KR20217011371 A KR 20217011371A KR 102616712 B1 KR102616712 B1 KR 102616712B1
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target
bias
measurements
overlay
asymmetry
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KR20210061391A (ko
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질리 저우
니테쉬 판데이
올거 빅토르 즈위어
페트릭 워나르
더 샤 마우리츠 반
나마라 엘리엇 제라드 엠씨
뵈프 아리 제프리 덴
폴 크리스티안 히넨
무라트 보즈쿠르트
주스트 제로엔 오텐스
카우스투베 바타차리야
마이클 쿠비스
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에이에스엠엘 네델란즈 비.브이.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020217011371A 2018-10-08 2019-10-07 계측 방법, 패터닝 디바이스, 장치 및 컴퓨터 프로그램 Active KR102616712B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18199182 2018-10-08
EP18199182.9 2018-10-08
PCT/EP2019/077016 WO2020074412A1 (en) 2018-10-08 2019-10-07 Metrology method, patterning device, apparatus and computer program

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KR20210061391A KR20210061391A (ko) 2021-05-27
KR102616712B1 true KR102616712B1 (ko) 2023-12-20

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Country Status (7)

Country Link
US (2) US10996570B2 (https=)
JP (1) JP7179979B2 (https=)
KR (1) KR102616712B1 (https=)
CN (1) CN113196172B (https=)
IL (1) IL282017B2 (https=)
TW (1) TWI711894B (https=)
WO (1) WO2020074412A1 (https=)

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CN113196172B (zh) 2018-10-08 2024-08-09 Asml荷兰有限公司 量测方法、图案形成装置、设备和计算机程序
TWI734284B (zh) * 2018-12-04 2021-07-21 荷蘭商Ａｓｍｌ荷蘭公司 用於判定微影製程之效能參數之目標
EP4111180A1 (en) * 2020-02-27 2023-01-04 Shenzhen Xpectvision Technology Co., Ltd. Method of phase contrast imaging
US12276921B2 (en) * 2020-05-07 2025-04-15 Asml Netherlands B.V. Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
US11521874B2 (en) * 2020-09-30 2022-12-06 Kla Corporation Systems and methods for determining measurement location in semiconductor wafer metrology
CN113655695B (zh) * 2021-09-02 2023-11-07 西华大学 一种基于介质微球超分辨成像的复合光刻对准系统及方法
EP4619823A1 (en) 2022-11-14 2025-09-24 ASML Netherlands B.V. Simulating an electromagnetic response of a semiconductor structure for diffraction based optical metrology
US20250297955A1 (en) * 2024-03-25 2025-09-25 Kla Corporation Scanning diffraction based overlay scatterometry

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US6982793B1 (en) 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
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US20180129139A1 (en) * 2016-11-10 2018-05-10 Asml Netherlands B.V. Correction using stack difference

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WO2020074412A1 (en) 2020-04-16
US10996570B2 (en) 2021-05-04
IL282017B1 (en) 2025-07-01
IL282017B2 (en) 2025-11-01
JP2022504488A (ja) 2022-01-13
TWI711894B (zh) 2020-12-01
CN113196172A (zh) 2021-07-30
CN113196172B (zh) 2024-08-09
US20200110342A1 (en) 2020-04-09
US11385553B2 (en) 2022-07-12
US20210255553A1 (en) 2021-08-19
TW202024805A (zh) 2020-07-01
JP7179979B2 (ja) 2022-11-29
KR20210061391A (ko) 2021-05-27
IL282017A (en) 2021-05-31

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