JP2022504488A5 - - Google Patents

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Publication number
JP2022504488A5
JP2022504488A5 JP2021519171A JP2021519171A JP2022504488A5 JP 2022504488 A5 JP2022504488 A5 JP 2022504488A5 JP 2021519171 A JP2021519171 A JP 2021519171A JP 2021519171 A JP2021519171 A JP 2021519171A JP 2022504488 A5 JP2022504488 A5 JP 2022504488A5
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JP
Japan
Prior art keywords
target
bias
measurements
positions
asymmetry
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JP2021519171A
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English (en)
Japanese (ja)
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JPWO2020074412A5 (https=
JP2022504488A (ja
JP7179979B2 (ja
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Priority claimed from PCT/EP2019/077016 external-priority patent/WO2020074412A1/en
Publication of JP2022504488A publication Critical patent/JP2022504488A/ja
Publication of JP2022504488A5 publication Critical patent/JP2022504488A5/ja
Publication of JPWO2020074412A5 publication Critical patent/JPWO2020074412A5/ja
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JP2021519171A 2018-10-08 2019-10-07 メトトロジ方法、パターニングデバイス、装置及びコンピュータプログラム Active JP7179979B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18199182 2018-10-08
EP18199182.9 2018-10-08
PCT/EP2019/077016 WO2020074412A1 (en) 2018-10-08 2019-10-07 Metrology method, patterning device, apparatus and computer program

Publications (4)

Publication Number Publication Date
JP2022504488A JP2022504488A (ja) 2022-01-13
JP2022504488A5 true JP2022504488A5 (https=) 2022-07-19
JPWO2020074412A5 JPWO2020074412A5 (https=) 2022-07-19
JP7179979B2 JP7179979B2 (ja) 2022-11-29

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JP2021519171A Active JP7179979B2 (ja) 2018-10-08 2019-10-07 メトトロジ方法、パターニングデバイス、装置及びコンピュータプログラム

Country Status (7)

Country Link
US (2) US10996570B2 (https=)
JP (1) JP7179979B2 (https=)
KR (1) KR102616712B1 (https=)
CN (1) CN113196172B (https=)
IL (1) IL282017B2 (https=)
TW (1) TWI711894B (https=)
WO (1) WO2020074412A1 (https=)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
CN113196172B (zh) 2018-10-08 2024-08-09 Asml荷兰有限公司 量测方法、图案形成装置、设备和计算机程序
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EP4111180A1 (en) * 2020-02-27 2023-01-04 Shenzhen Xpectvision Technology Co., Ltd. Method of phase contrast imaging
US12276921B2 (en) * 2020-05-07 2025-04-15 Asml Netherlands B.V. Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
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CN113655695B (zh) * 2021-09-02 2023-11-07 西华大学 一种基于介质微球超分辨成像的复合光刻对准系统及方法
EP4619823A1 (en) 2022-11-14 2025-09-24 ASML Netherlands B.V. Simulating an electromagnetic response of a semiconductor structure for diffraction based optical metrology
US20250297955A1 (en) * 2024-03-25 2025-09-25 Kla Corporation Scanning diffraction based overlay scatterometry

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