JPWO2020022187A1 - 基板処理システム及び基板処理方法 - Google Patents
基板処理システム及び基板処理方法 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims abstract description 166
- 239000007788 liquid Substances 0.000 claims abstract description 157
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 230000007246 mechanism Effects 0.000 claims abstract description 15
- 238000000227 grinding Methods 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 65
- 230000008569 process Effects 0.000 claims description 62
- 239000000243 solution Substances 0.000 claims description 40
- 238000005259 measurement Methods 0.000 claims description 25
- 239000012487 rinsing solution Substances 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 8
- 238000009529 body temperature measurement Methods 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 271
- 238000001039 wet etching Methods 0.000 description 27
- 238000004140 cleaning Methods 0.000 description 21
- 238000004364 calculation method Methods 0.000 description 14
- 238000006116 polymerization reaction Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000003754 machining Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000012788 optical film Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
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- B05B13/04—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation
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- B05B13/041—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with reciprocating or oscillating spray heads with spray heads reciprocating along a straight line
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
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Abstract
Description
40、41 ウェットエッチング装置
60 制御装置
120 レール
121 アーム
122 液供給ノズル
124 駆動部
150 センサ
S 支持ウェハ
T 重合ウェハ
W 処理ウェハ
Claims (20)
- 基板を処理する基板処理システムであって、
基板をエッチングするエッチング装置と、
前記エッチング装置を制御する制御装置と、を有し、
前記エッチング装置は、
基板に処理液を供給する液供給ノズルと、
前記液供給ノズルと一体に設けられ、基板に接触せずに当該基板の厚みを計測する厚み計測部と、
前記液供給ノズルと前記厚み計測部を水平方向に移動させる移動機構と、を有し、
前記制御装置は、前記液供給ノズルと前記厚み計測部を水平方向に移動させながら、当該厚み計測部によって基板の厚みを計測するように、前記液供給ノズル、前記厚み計測部、及び前記移動機構を制御する、基板処理システム。 - 前記処理液はエッチング液であり、
前記制御装置は、前記液供給ノズルから供給された前記エッチング液による基板のエッチング処理中において、前記厚み計測部によって基板の厚みを計測するように、前記液供給ノズル、前記厚み計測部、及び前記移動機構を制御する、請求項1に記載の基板処理システム。 - 前記処理液はリンス液であり、
前記制御装置は、前記液供給ノズルから供給された前記リンス液による、基板のエッチング処理後のリンス処理中において、前記厚み計測部によって基板の厚みを計測するように、前記液供給ノズル、前記厚み計測部、及び前記移動機構を制御する、請求項1に記載の基板処理システム。 - 前記処理液は、エッチング液とリンス液を含み、
前記制御装置は、前記液供給ノズルから供給された前記エッチング液による基板のエッチング処理中と、前記液供給ノズルから供給された前記リンス液による、基板のエッチング処理後のリンス処理中とにおいて、前記厚み計測部によって基板の厚みを計測するように、前記液供給ノズル、前記厚み計測部、及び前記移動機構を制御する、請求項1に記載の基板処理システム。 - 前記液供給ノズルには、前記エッチング液と前記リンス液が切り替えて供給され、
前記エッチング処理中と前記リンス処理中のそれぞれにおいて、共通の前記厚み計測部によって基板の厚みを計測する、請求項4に記載の基板処理システム。 - 前記液供給ノズルは、前記エッチング液を供給する第1の液供給ノズルと、前記リンス液を供給する第2の液供給ノズルを含み、
前記第1の液供給ノズルと前記第2の液供給ノズルにはそれぞれ、前記厚み計測部が設けられている、請求項4に記載の基板処理システム。 - 前記エッチング装置は、基板の温度を計測する温度計測部を有し、
前記制御装置は、前記温度計測部での温度計測データに基づいて、前記厚み計測部における基板の厚みの計測を補正する、請求項1〜6のいずれか一項に記載の基板処理システム。 - 前記制御装置は、前記厚み計測部で計測した厚み計測データに基づいて、前記エッチング装置のエッチング条件を制御する、請求項1〜7のいずれか一項に記載の基板処理システム。
- 基板の一面を研削する研削装置を有し、
前記エッチング装置は、前記研削装置で研削された基板の一面をエッチングし、
前記制御装置は、エッチング処理前又はエッチング処理後に前記厚み計測部で計測した厚み計測データに基づいて、前記研削装置の研削条件を制御する、請求項1〜7のいずれか一項に記載の基板処理システム。 - 前記エッチング装置で基板の一面をエッチングした後、当該基板の一面を研磨する研磨装置を有し、
前記制御装置は、エッチング処理後に前記厚み計測部で計測された厚み計測データに基づいて、前記研磨装置の研磨条件を制御する、請求項1〜7のいずれか一項に記載の基板処理システム。 - 基板を処理する基板処理方法であって、
エッチング装置を用いて基板をエッチングすることを有し、
前記エッチング装置は、
基板に処理液を供給する液供給ノズルと、
前記液供給ノズルと一体に設けられ、基板に接触せずに当該基板の厚みを計測する厚み計測部と、
前記液供給ノズルと前記厚み計測部を水平方向に移動させる移動機構と、を有し、
前記基板のエッチングにおいては、前記液供給ノズルと前記厚み計測部を水平方向に移動させながら、当該厚み計測部によって基板の厚みを計測する、基板処理方法。 - 前記処理液はエッチング液であり、
前記基板のエッチングにおいては、前記液供給ノズルから供給された前記エッチング液による基板のエッチング処理中において、前記厚み計測部によって基板の厚みを計測する、請求項11に記載の基板処理方法。 - 前記処理液はリンス液であり、
前記基板のエッチングにおいては、前記液供給ノズルから供給された前記リンス液による、基板のエッチング処理後のリンス処理中において、前記厚み計測部によって基板の厚みを計測する、請求項11に記載の基板処理方法。 - 前記処理液は、エッチング液とリンス液を含み、
前記基板のエッチングにおいては、前記液供給ノズルから供給された前記エッチング液による基板のエッチング処理中と、前記液供給ノズルから供給された前記リンス液による、基板のエッチング処理後のリンス処理中とにおいて、前記厚み計測部によって基板の厚みを計測する、請求項11に記載の基板処理方法。 - 前記液供給ノズルには、前記エッチング液と前記リンス液が切り替えて供給され、
前記基板のエッチングにおいては、前記エッチング処理中と前記リンス処理中のそれぞれにおいて、共通の前記厚み計測部によって基板の厚みを計測する、請求項14に記載の基板処理方法。 - 前記液供給ノズルは、前記エッチング液を供給する第1の液供給ノズルと、前記リンス液を供給する第2の液供給ノズルを含み、
前記第1の液供給ノズルと前記第2の液供給ノズルにはそれぞれ、前記厚み計測部が設けられ、
前記基板のエッチングにおいては、前記第1の液供給ノズルから供給された前記エッチング液による基板のエッチング処理中と、前記第2の液供給ノズルから供給された前記リンス液による、基板のエッチング処理後のリンス処理中とにおいて、前記厚み計測部によって基板の厚みを計測する、請求項14に記載の基板処理方法。 - 前記エッチング装置は、基板の温度を計測する温度計測部を有し、
前記基板のエッチングにおいては、前記温度計測部での温度計測データに基づいて、前記厚み計測部における基板の厚みの計測を補正する、請求項11〜16のいずれか一項に記載の基板処理方法。 - 前記基板のエッチングにおいては、前記厚み計測部で計測した厚み計測データに基づいて、前記基板のエッチング条件を制御する、請求項11〜17のいずれか一項に記載の基板処理方法。
- 基板の一面を研削する研削ことを有し、
前記基板のエッチングにおいては、研削された基板の一面をエッチングし、
エッチング処理前又はエッチング処理後に前記厚み計測部で計測した厚み計測データに基づいて、前記基板の研削条件を制御する、請求項11〜17のいずれか一項に記載の基板処理方法。 - 前記基板の一面をエッチングした後、当該基板の一面を研磨することを有し、
前記基板のエッチングにおいては、エッチング処理後に前記厚み計測部で計測された厚み計測データに基づいて、前記基板の研磨条件を制御する、請求項11〜17のいずれか一項に記載の基板処理方法。
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