JPWO2020021648A1 - 流水式超音波洗浄機及びそのノズル、超音波洗浄方法 - Google Patents
流水式超音波洗浄機及びそのノズル、超音波洗浄方法 Download PDFInfo
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- JPWO2020021648A1 JPWO2020021648A1 JP2018553160A JP2018553160A JPWO2020021648A1 JP WO2020021648 A1 JPWO2020021648 A1 JP WO2020021648A1 JP 2018553160 A JP2018553160 A JP 2018553160A JP 2018553160 A JP2018553160 A JP 2018553160A JP WO2020021648 A1 JPWO2020021648 A1 JP WO2020021648A1
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- 238000000034 method Methods 0.000 title claims description 11
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000000126 substance Substances 0.000 claims abstract description 25
- 238000007599 discharging Methods 0.000 claims abstract description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 7
- 239000011147 inorganic material Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000005187 foaming Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 5
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 239000002585 base Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0217—Use of a detergent in high pressure cleaners; arrangements for supplying the same
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0288—Ultra or megasonic jets
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
2…被洗浄物としてのシリコンウェハ
11、11A、11B、11C…流水式超音波洗浄機ノズル
12…ノズル本体
14…空洞部
15…吐出口
17…流路
18…内部空間
31…超音波振動子
31b…(超音波振動子の)前端面としての下端面
41、41A、41B、41C…振動体
42、42A、42B、42C…振動体主部
46…隙間
51…洗浄液供給装置
61…超音波発振器
W1…洗浄液
Claims (9)
- 超音波を重畳させた洗浄液を流水として吐出することで被洗浄物を超音波洗浄する流水式超音波洗浄機ノズルであって、
前記洗浄液が流れる流路の一部をなす先細り形状の空洞部を有し、前記空洞部内の前記洗浄液を吐出する吐出口を前記空洞部の先端に有するノズル本体と、
前記空洞部の基端側に配置された板状の超音波振動子と、
耐薬品性を有する非金属無機材料からなり、前記超音波振動子の前端面に密着固定され、前記空洞部の内部空間の半分以上の容積を占有する振動体と
を備え、
前記振動体の外表面と前記空洞部の内壁面との隙間を介して、前記洗浄液が流れるように構成されている
ことを特徴とする流水式超音波洗浄機ノズル。 - 前記振動体は先端側に行くほど細くなる形状をなす中実体であり、前記振動体の基端面は前記超音波振動子の前記前端面の略全体に対して密着固定されていることを特徴とする請求項1に記載の流水式超音波洗浄機ノズル。
- 前記振動体は、錐体の形状をなす振動体主部を有することを特徴とする請求項2に記載の流水式超音波洗浄機ノズル。
- 前記振動体は、石英製であることを特徴とする請求項1乃至3のいずれか1項に記載の流水式超音波洗浄機ノズル。
- 前記振動体の前記基端面は、前記超音波振動子の前記前端面に対して耐熱性接着剤を介して接着されていることを特徴とする請求項1乃至4のいずれか1項に記載の流水式超音波洗浄機ノズル。
- 前記隙間の大きさは略一定であることを特徴とする請求項1乃至5のいずれか1項に記載の流水式超音波洗浄機ノズル。
- 前記振動体は、前記空洞部の内部空間の60%以上95%以下の容積を占有することを特徴とする請求項1乃至6のいずれか1項に記載の流水式超音波洗浄機ノズル。
- 請求項1乃至7のいずれか1項に記載のノズルと、前記ノズルの前記空洞部内に前記洗浄液を供給する洗浄液供給装置と、前記ノズルの前記超音波振動子を駆動させる超音波発振器とを備えたことを特徴とする流水式超音波洗浄機。
- 請求項8に記載の流水式超音波洗浄機を用いて被洗浄物を洗浄する方法であって、前記被洗浄物が半導体ウェハまたは半導体製造用ツールであり、前記洗浄液が前記半導体ウェハまたは半導体製造用ツールを洗浄するための発泡性の薬液であることを特徴とする超音波洗浄方法。
Applications Claiming Priority (1)
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PCT/JP2018/027811 WO2020021648A1 (ja) | 2018-07-25 | 2018-07-25 | 流水式超音波洗浄機及びそのノズル、超音波洗浄方法 |
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JP6507358B1 JP6507358B1 (ja) | 2019-05-08 |
JPWO2020021648A1 true JPWO2020021648A1 (ja) | 2020-08-06 |
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Country Status (4)
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JP (1) | JP6507358B1 (ja) |
KR (1) | KR20200012835A (ja) |
CN (1) | CN110730693A (ja) |
WO (1) | WO2020021648A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113891820B (zh) * | 2020-03-19 | 2024-09-06 | 株式会社村田制作所 | 振动装置和振动控制方法 |
KR102446082B1 (ko) * | 2020-08-12 | 2022-09-23 | 한국기계연구원 | 초음파를 이용한 유체 분사 모듈 |
KR20230075323A (ko) | 2020-09-28 | 2023-05-31 | 가부시끼가이샤가이죠 | 초음파 샤워 세정 장치 |
JP7282472B2 (ja) * | 2020-09-28 | 2023-05-29 | 株式会社カイジョー | 超音波シャワー洗浄装置 |
JP7088461B1 (ja) * | 2021-04-16 | 2022-06-21 | 守 笹川 | 超音波洗浄装置 |
CN113996593B (zh) * | 2021-11-15 | 2024-06-21 | 东莞市佳源达科技有限公司 | 一种用于半导体表面清洁的超声波清洗装置 |
Family Cites Families (11)
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JPS5786166A (en) | 1980-11-17 | 1982-05-29 | Sony Corp | Tape tension detector |
JPH03181378A (ja) * | 1989-12-11 | 1991-08-07 | Matsushita Electric Ind Co Ltd | 洗浄装置 |
JP2000334403A (ja) | 1999-05-31 | 2000-12-05 | Honda Electronic Co Ltd | 超音波洗浄装置 |
JP2003340386A (ja) * | 2002-05-23 | 2003-12-02 | Toshiba Corp | 超音波洗浄装置及び超音波洗浄方法 |
JP2004148179A (ja) | 2002-10-30 | 2004-05-27 | Honda Electronic Co Ltd | 超音波洗浄装置 |
CN100443036C (zh) * | 2003-02-25 | 2008-12-17 | 松下电工株式会社 | 超声波洗涤装置 |
JP4428014B2 (ja) * | 2003-02-25 | 2010-03-10 | パナソニック電工株式会社 | 超音波生体洗浄装置 |
JP2008080293A (ja) * | 2006-09-28 | 2008-04-10 | Hitachi Plant Technologies Ltd | 洗浄装置 |
JP2010238744A (ja) * | 2009-03-30 | 2010-10-21 | Toshiba Corp | 超音波洗浄ユニット、超音波洗浄装置 |
JP5703625B2 (ja) * | 2010-08-12 | 2015-04-22 | 富士通株式会社 | 洗浄装置および洗浄方法 |
JP5786166B2 (ja) * | 2011-07-19 | 2015-09-30 | 学校法人昭和大学 | 流水式超音波口腔洗浄装置 |
-
2018
- 2018-07-25 CN CN201880027560.2A patent/CN110730693A/zh active Pending
- 2018-07-25 JP JP2018553160A patent/JP6507358B1/ja active Active
- 2018-07-25 WO PCT/JP2018/027811 patent/WO2020021648A1/ja active Application Filing
- 2018-07-25 KR KR1020197031862A patent/KR20200012835A/ko not_active Application Discontinuation
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JP6507358B1 (ja) | 2019-05-08 |
WO2020021648A1 (ja) | 2020-01-30 |
CN110730693A (zh) | 2020-01-24 |
KR20200012835A (ko) | 2020-02-05 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |