JPWO2019123130A1 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JPWO2019123130A1 JPWO2019123130A1 JP2019560507A JP2019560507A JPWO2019123130A1 JP WO2019123130 A1 JPWO2019123130 A1 JP WO2019123130A1 JP 2019560507 A JP2019560507 A JP 2019560507A JP 2019560507 A JP2019560507 A JP 2019560507A JP WO2019123130 A1 JPWO2019123130 A1 JP WO2019123130A1
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- Prior art keywords
- potential
- transistor
- display device
- electrode
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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Images
Classifications
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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Abstract
Description
本実施の形態では、本発明の一態様の表示装置について図面を用いて説明する。
図1は、本発明の一態様の表示装置に用いることができる画素11aを説明する図である。画素11aは、トランジスタ21と、トランジスタ22と、容量素子25と、表示デバイス26を有する。表示デバイス26として、例えば液晶デバイスを用いることができる。
図3は、本発明の一態様の表示装置に用いることができる画素11bを説明する図である。画素11bは、画素11aの変形例であり、トランジスタ23が設けられている点が画素11aと異なる。
図5(A)は、本発明の一態様の表示装置に用いることができる画素11cを説明する図であり、図5(B)は、本発明の一態様の表示装置に用いることができる画素11dを説明する図である。画素11cは、画素11aに設けられたトランジスタ21、及びトランジスタ22にバックゲートを設けた構成である。画素11dは、画素11bに設けられたトランジスタ21乃至トランジスタ23にバックゲートを設けた構成である。バックゲートは、当該バックゲートが設けられたトランジスタのフロントゲートと電気的に接続することができ、オン電流を高める効果を有する。また、バックゲートにフロントゲートと異なる電位を供給できる構成としてもよい。当該構成とすることで、トランジスタのしきい値電圧を制御することができる。なお、図5(A)、(B)においては、画素が有する全てのトランジスタにバックゲートを設けた構成を図示しているが、バックゲートが設けられないトランジスタを有していてもよい。
図6は、本発明の一態様の表示装置である表示装置10の構成例を示す図である。表示装置10は、画素11がm行n列(m、nは2以上の整数)のマトリクス状に設けられた画素アレイ14と、ゲートドライバ回路12と、ソースドライバ回路13を有する。ゲートドライバ回路12には、配線33が電気的に接続されている。ソースドライバ回路13には、配線31及び配線32が電気的に接続されている。画素11としては、画素11a、画素11b、画素11c、又は画素11d等を適用することができる。
図7(A)は、ソースドライバ回路13の具体的な構成例を示す図である。なお、図7(A)には、ソースドライバ回路13の他、画素11[i,j]及び画素11[i,j+1]も示している。
図8(A)は、図7(A)とは異なる構成のソースドライバ回路13を示す図である。なお、図8(A)には、ソースドライバ回路13の他、画素11[i,j]並びに信号生成回路61及び変換回路62も示している。
図9は、表示装置10の構成例を示す断面図であり、表示装置10が、横電界方式が適用された透過型液晶表示装置である場合を示している。
本実施の形態では、上記実施の形態に示した各トランジスタに置き換えて用いることのできるトランジスタの一例について、図面を用いて説明する。
図10(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ810のチャネル長方向の断面図である。図10(A1)において、トランジスタ810は基板771上に形成されている。また、トランジスタ810は、基板771上に絶縁層772を介して電極746を有する。また、電極746上に絶縁層726を介して半導体層742を有する。電極746はゲート電極として機能できる。絶縁層726はゲート絶縁層として機能できる。
図12(A1)に例示するトランジスタ842は、トップゲート型のトランジスタの1つである。トランジスタ842は、絶縁層729を形成した後に電極744a及び電極744bを形成する。電極744a及び電極744bは、絶縁層728及び絶縁層729に形成した開口部において半導体層742と電気的に接続する。
本実施の形態では、OSトランジスタの詳細な構成例について説明する。
本実施の形態では、本発明の一態様の電子機器について図14を用いて説明する。
Signage:電子看板)、パチンコ機等の大型ゲーム機等の比較的大きな画面を備える電子機器の他、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、等が挙げられる。
Claims (13)
- 画素と、ソースドライバ回路と、を有する表示装置であって、
前記画素は、第1のトランジスタと、第2のトランジスタと、容量素子と、表示デバイスと、を有し、
前記第1のトランジスタのソース又はドレインの一方は、前記容量素子の一方の電極と電気的に接続され、
前記容量素子の一方の電極は、前記表示デバイスの一方の電極と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、前記容量素子の他方の電極と電気的に接続され、
前記容量素子の他方の電極は、前記表示デバイスの他方の電極と電気的に接続され、
前記第1のトランジスタのソース又はドレインの他方は、第1の配線を介して前記ソースドライバ回路と電気的に接続され、
前記第2のトランジスタのソース又はドレインの他方は、第2の配線を介して前記ソースドライバ回路と電気的に接続されている表示装置。 - 請求項1において、
前記ソースドライバ回路は、前記第2の配線に、第1の電位又は第2の電位を供給する機能を有し、
前記ソースドライバ回路は、第1の抵抗素子と、第2の抵抗素子と、を有し、
前記第1の抵抗素子の一方の端子には、前記第1の電位が供給され、
前記第2の抵抗素子の一方の端子には、前記第2の電位が供給される表示装置。 - 請求項2において、
前記ソースドライバ回路は、第1のスイッチと、第2のスイッチと、を有し、
前記第1の抵抗素子の一方の端子は、前記第1のスイッチの一方の端子と電気的に接続され、
前記第1のスイッチの他方の端子は、前記第2の配線と電気的に接続され、
前記第2の抵抗素子の一方の端子は、前記第2のスイッチの一方の端子と電気的に接続され、
前記第2のスイッチの他方の端子は、前記第2の配線と電気的に接続されている表示装置。 - 請求項2又は3において、
前記第1の電位は、正電位であり、
前記第2の電位は、負電位である表示装置。 - 請求項4において、
前記第1の電位の絶対値と、前記第2の電位の絶対値と、は同一又は略同一である表示装置。 - 請求項1乃至5のいずれか一項において、
前記第1のトランジスタのゲート、及び前記第2のトランジスタのゲートは、第3の配線と電気的に接続されている表示装置。 - 請求項1乃至6のいずれか一項において、
前記表示装置は、ゲートドライバ回路を有し、
前記第3の配線は、前記ゲートドライバ回路と電気的に接続されている表示装置。 - 請求項1乃至7のいずれか一項において、
前記表示デバイスは、液晶デバイスである表示装置。 - 請求項8において、
前記表示デバイスは、横電界方式が適用された液晶デバイスである表示装置。 - 請求項9において、
前記表示デバイスは、ブルー相を示す液晶を有する表示装置。 - 請求項1乃至10のいずれか一項において、
前記第1のトランジスタ、及び前記第2のトランジスタは、チャネル形成領域に金属酸化物を有し、
前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、Nd、又はHf)と、を有する表示装置。 - 請求項1乃至11のいずれか一項において、
前記画素は、第3のトランジスタを有し、
前記第3のトランジスタのソース又はドレインの一方は、前記表示デバイスの他方の電極と電気的に接続され、
前記第3のトランジスタのソース又はドレインの一方は、共通配線と電気的に接続されている表示装置。 - 請求項12において、
前記第3のトランジスタは、チャネル形成領域に金属酸化物を有し、
前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、Nd、又はHf)と、を有する表示装置。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996000408A1 (fr) * | 1994-06-24 | 1996-01-04 | Hitachi, Ltd. | Afficheur a cristaux liquides de type matrice active et son procede d'activation |
JP2003337560A (ja) * | 2002-03-13 | 2003-11-28 | Nec Corp | 表示装置の駆動回路、その制御方法、携帯電話機及び携帯用電子機器 |
JP2005258417A (ja) * | 2004-02-09 | 2005-09-22 | Advanced Lcd Technologies Development Center Co Ltd | 液晶画素メモリ、液晶表示装置およびこれらの駆動方法 |
JP2008065308A (ja) * | 2006-08-07 | 2008-03-21 | Seiko Epson Corp | 電気光学素子の駆動方法、画素回路、電気光学装置および電子機器 |
JP2009168931A (ja) * | 2008-01-11 | 2009-07-30 | Toshiba Mobile Display Co Ltd | 液晶表示装置 |
JP2009301010A (ja) * | 2008-06-16 | 2009-12-24 | Samsung Electronics Co Ltd | 液晶表示装置 |
JP2010156960A (ja) * | 2008-12-03 | 2010-07-15 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
US20100225839A1 (en) * | 2009-03-05 | 2010-09-09 | Samsung Electronics Co., Ltd. | Liquid crystal display and driving method thereof |
JP2016110112A (ja) * | 2014-12-02 | 2016-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6198464B1 (en) | 1995-01-13 | 2001-03-06 | Hitachi, Ltd. | Active matrix type liquid crystal display system and driving method therefor |
JPH11119193A (ja) | 1997-10-16 | 1999-04-30 | Sony Corp | 液晶表示装置 |
DE10303427A1 (de) | 2002-02-06 | 2003-10-16 | Nec Corp Tokio Tokyo | Verstärker-Schaltung, Treiber-Schaltung für ein Anzeigegerät , tragbares Telefon und tragbares elektronisches Gerät |
JP2003302942A (ja) * | 2002-04-09 | 2003-10-24 | Hitachi Displays Ltd | 画像表示装置 |
US7425940B2 (en) | 2004-02-09 | 2008-09-16 | Advanced Lcd Technologies Development Center Co., Ltd. | Liquid crystal pixel memory, liquid crystal display, and methods of driving the same |
CN100414596C (zh) * | 2005-12-02 | 2008-08-27 | 群康科技(深圳)有限公司 | 液晶显示器及其驱动电路与驱动方法 |
KR101245944B1 (ko) * | 2006-05-10 | 2013-03-21 | 엘지디스플레이 주식회사 | 액정패널, 이를 구비한 액정표시장치 및 그 구동 방법 |
JP2008250118A (ja) * | 2007-03-30 | 2008-10-16 | Seiko Epson Corp | 液晶装置、液晶装置の駆動回路、液晶装置の駆動方法および電子機器 |
CN100483241C (zh) * | 2007-06-28 | 2009-04-29 | 友达光电股份有限公司 | 液晶显示装置、栅极驱动电路及其驱动电路单元 |
JP5093730B2 (ja) * | 2007-07-09 | 2012-12-12 | Nltテクノロジー株式会社 | 液晶表示装置 |
KR101046929B1 (ko) | 2008-06-16 | 2011-07-06 | 삼성전자주식회사 | 액정 표시 장치 |
JP2011107692A (ja) * | 2009-10-20 | 2011-06-02 | Semiconductor Energy Lab Co Ltd | 表示装置の駆動方法、表示装置、及び電子機器。 |
US8373621B2 (en) * | 2009-12-01 | 2013-02-12 | Samsung Display Co., Ltd. | Array substrate and liquid crystal display device having the same |
US20110279427A1 (en) | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
JP5775357B2 (ja) | 2010-05-21 | 2015-09-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US10140940B2 (en) | 2015-07-24 | 2018-11-27 | Japan Display Inc. | Display device |
US10007161B2 (en) * | 2015-10-26 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
-
2018
- 2018-12-13 CN CN202310769449.3A patent/CN117008384A/zh active Pending
- 2018-12-13 JP JP2019560507A patent/JP7321942B2/ja active Active
- 2018-12-13 EP EP18890303.3A patent/EP3731008A4/en not_active Withdrawn
- 2018-12-13 KR KR1020207019643A patent/KR102599913B1/ko active IP Right Grant
- 2018-12-13 CN CN201880077376.9A patent/CN111417895B/zh active Active
- 2018-12-13 WO PCT/IB2018/059983 patent/WO2019123130A1/ja unknown
- 2018-12-13 US US16/770,998 patent/US11217190B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996000408A1 (fr) * | 1994-06-24 | 1996-01-04 | Hitachi, Ltd. | Afficheur a cristaux liquides de type matrice active et son procede d'activation |
JP2003337560A (ja) * | 2002-03-13 | 2003-11-28 | Nec Corp | 表示装置の駆動回路、その制御方法、携帯電話機及び携帯用電子機器 |
JP2005258417A (ja) * | 2004-02-09 | 2005-09-22 | Advanced Lcd Technologies Development Center Co Ltd | 液晶画素メモリ、液晶表示装置およびこれらの駆動方法 |
JP2008065308A (ja) * | 2006-08-07 | 2008-03-21 | Seiko Epson Corp | 電気光学素子の駆動方法、画素回路、電気光学装置および電子機器 |
JP2009168931A (ja) * | 2008-01-11 | 2009-07-30 | Toshiba Mobile Display Co Ltd | 液晶表示装置 |
JP2009301010A (ja) * | 2008-06-16 | 2009-12-24 | Samsung Electronics Co Ltd | 液晶表示装置 |
JP2010156960A (ja) * | 2008-12-03 | 2010-07-15 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
US20100225839A1 (en) * | 2009-03-05 | 2010-09-09 | Samsung Electronics Co., Ltd. | Liquid crystal display and driving method thereof |
JP2016110112A (ja) * | 2014-12-02 | 2016-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置 |
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WO2019123130A1 (ja) | 2019-06-27 |
KR102599913B1 (ko) | 2023-11-07 |
US20200372868A1 (en) | 2020-11-26 |
KR20200093650A (ko) | 2020-08-05 |
US11217190B2 (en) | 2022-01-04 |
JP7321942B2 (ja) | 2023-08-07 |
CN117008384A (zh) | 2023-11-07 |
CN111417895A (zh) | 2020-07-14 |
EP3731008A1 (en) | 2020-10-28 |
CN111417895B (zh) | 2023-06-16 |
EP3731008A4 (en) | 2021-07-21 |
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