JPWO2019116868A1 - 半導体整流器 - Google Patents
半導体整流器 Download PDFInfo
- Publication number
- JPWO2019116868A1 JPWO2019116868A1 JP2019559523A JP2019559523A JPWO2019116868A1 JP WO2019116868 A1 JPWO2019116868 A1 JP WO2019116868A1 JP 2019559523 A JP2019559523 A JP 2019559523A JP 2019559523 A JP2019559523 A JP 2019559523A JP WO2019116868 A1 JPWO2019116868 A1 JP WO2019116868A1
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor rectifier
- electrode
- diode
- transistor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 169
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 63
- 238000011084 recovery Methods 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- 230000004048 modification Effects 0.000 description 31
- 238000012986 modification Methods 0.000 description 31
- 230000002441 reversible effect Effects 0.000 description 31
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 and for example Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49531—Additional leads the additional leads being a wiring board
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Rectifiers (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
図1〜図4は、本開示の第1実施形態に係る半導体整流器を示している。本実施形態の半導体整流器A1は、トランジスタ1、ダイオード2、リードフレーム3および封止樹脂6を備えている。
図7は、半導体整流器A1の第1変形例を示している。本変形例の半導体整流器A11は、リードフレーム3の構成が、上述した半導体整流器A1と異なっている。本変形例においては、アイランド部30には、上述した金属層32および絶縁層33は、形成されていない。トランジスタ1の素子本体10が接合層19によってアイランド部30に接合されており、ダイオード2のカソード電極21Cが接合層29によってアイランド部30に接合されている。これにより、アイランド部30は、カソード電極21Cと同電位となる。これに対応して、カソード端子31Cは、アイランド部30から離間している。複数のドレインワイヤ4Dは、トランジスタ1のドレイン電極11Dとカソード端子31Cとに接続されている。アイランド部30は、封止樹脂6から一部が露出していてもよいし、封止樹脂6によって全てが覆われていてもよい。
図8および図9は、半導体整流器A1の第2変形例を示している。本変形例の半導体整流器A12は、ダイオード2の実装構造が、上述した例と異なっている。本変形例においては、ダイオード2のカソード電極21Cが、接合層29によってトランジスタ1のソース電極11Sに接合されている。これにより、トランジスタ1とダイオード2とが積層された実装構造となっている。
図10は、半導体整流器A1の第3変形例を示している。本変形例の半導体整流器A13は、トランジスタ1およびダイオード2の実装構造が、半導体整流器A12と類似しており、リードフレーム3の構成が半導体整流器A12と異なっている。本変形例においては、アイランド部30とカソード端子31Cとが一体的に形成されている。複数のドレインワイヤ4Dは、ドレイン電極11Dとアイランド部30とに接続されている。
図11および図12は、本開示の第2実施形態に係る半導体整流器を示している。本実施形態の半導体整流器A2は、トランジスタ1およびダイオード2に加えて、第1抵抗器51を備えている。第1抵抗器51は、アノード端子31Aとトランジスタ1のゲート電極11Gとの導通経路に介在している。なお、第1抵抗器51は、トランジスタ1およびダイオード2のいずれかと一体的に形成されていてもよい。
図13および図14は、本開示の第3実施形態に係る半導体整流器を示している。本実施形態の半導体整流器A3は、トランジスタ1およびダイオード2に加えて、コンデンサ55を備えている。コンデンサ55は、ダイオード2に対して並列に接続されている。なおコンデンサ55は、トランジスタ1およびダイオード2のいずれかと一体的に形成されていてもよい。
図15および図16は、本開示の第3実施形態に係る半導体整流器の第1変形例を示している。本変形例の半導体整流器A31は、第2抵抗器52を備えている。第2抵抗器52は、コンデンサ55に対して直列に接続されており、コンデンサ55とソース電極11Sとの導通経路に含まれている。なお、第2抵抗器52は、トランジスタ1およびダイオード2のいずれかと一体的に形成されていてもよい。
図21および図22は、本開示の第4実施形態に係る半導体整流器を示している。本実施形態の半導体整流器A4は、トランジスタ1の構成が、上述した実施形態と異なっている。本実施形態のトランジスタ1は、素子本体10がSiC半導体層を含んでおり、いわゆる縦型のトランジスタである。ソース電極11Sおよびゲート電極11Gは、素子本体10の上面に位置しており、ドレイン電極11Dは、ソース電極11Sおよびゲート電極11Gとは反対側の下面に位置している。トランジスタ1の1Dは、接合層19によって金属層32に接合されている。接合層19は、導電性の材料からなり、たとえばはんだである。
図23は、半導体整流器A4の第1変形例を示している。本変形例の半導体整流器A41においては、金属層32および絶縁層33の構成が、上述した半導体整流器A4と異なっている。本変形例においては、金属層32および絶縁層33は、z方向視においてダイオード2と重なっており、且つトランジスタ1とは重なっていない。
図24および図25は、半導体整流器A4の第2変形例を示している。本変形例の半導体整流器A42は、トランジスタ1とダイオード2とが積層された実装構造となっている。すなわち、ダイオード2のカソード電極21Cが、接合層29によってトランジスタ1のソース電極11Sに導通接合されている。また、トランジスタ1のドレイン電極11Dは、接合層19によってアイランド部30に導通接合されている。
図26および図27は、本開示の第5実施形態に係る半導体整流器を示している。本実施形態の半導体整流器A5は、トランジスタ1およびダイオード2を2つずつ備えている。
図28は、本開示の第6実施形態に基づく半導体整流器を示している。本実施形態の半導体整流器A6は、いわゆる面実装型の半導体整流器として構成されている。
図30および図31は、本開示の第7実施形態に係る半導体整流器を示している。本実施形態の半導体整流器A7は、トランジスタ1とダイオード2とが、いわゆるモノリシック構造によって互いに一体的に形成されており、同一の半導体基板15を共有しているいる。半導体基板15は、たとえばSiからなる。半導体基板15の両側には、ダイオード2のアノード電極21Aおよびカソード電極21Cが形成されている。素子本体10は、半導体基板15上に積層されている。トランジスタ1、ダイオード2およびリードフレーム3の導通形態は、半導体整流器A1と同様である。
[付記1]
ソース電極、ドレイン電極およびゲート電極を有するトランジスタと、
アノード電極およびカソード電極を有するダイオードであって、前記アノード電極は前記ゲート電極に導通し、前記カソード電極は前記ソース電極に導通するダイオードと、を備える、半導体整流器。
[付記2]
前記トランジスタは、ノーマーリーオン型である、付記1に記載の半導体整流器。
[付記3]
前記アノード電極と前記ゲート電極との導通経路に介在する第1抵抗器を備える、付記1または2に記載の半導体整流器。
[付記4]
前記第1抵抗器は、前記トランジスタおよび前記ダイオードの少なくともいずれかと一体的に形成されている、付記3に記載の半導体整流器。
[付記5]
前記ダイオードに対して並列に接続されたコンデンサを備える、付記1ないし4のいずれかに記載の半導体整流器。
[付記6]
前記コンデンサに対して直列に接続された第2抵抗器を備える、付記5に記載の半導体整流器。
[付記7]
前記第2抵抗器は、前記トランジスタおよび前記ダイオードの少なくともいずれかと一体的に形成されている、付記6に記載の半導体整流器。
[付記8]
前記トランジスタは、GaN半導体層またはSiC半導体層を有する、付記1ないし7のいずれかに記載の半導体整流器。
[付記9]
前記ダイオードは、Siショットキーバリアダイオードである、付記1ないし8のいずれかに記載の半導体整流器。
[付記10]
前記トランジスタの耐圧は、前記ダイオードの耐圧よりも高い、付記1ないし9のいずれかに記載の半導体整流器。
[付記11]
前記トランジスタと前記ダイオードとが、同一の半導体基板を共有している、付記1ないし10のいずれかに記載の半導体整流器。
[付記12]
前記ダイオードの閾値電圧が、0.8V以下である、付記1ないし11のいずれかに記載の半導体整流器。
[付記13]
前記トランジスタの前記ドレイン電極および前記ソース電極間の静電容量Cds、前記ゲート電極および前記ソース電極間の静電容量Cgsおよび前記ダイオードの静電容量Cdiが、
2Cds≦Cdi+Cgs
の関係を満たす、付記1ないし12のいずれかに記載の半導体整流器。
[付記14]
前記トランジスタの前記ドレイン電極および前記ソース電極間の静電容量Cds、前記ゲート電極および前記ソース電極間の静電容量Cgs、前記ダイオードの静電容量Cdiおよび前記コンデンサの静電容量Cxdが、
2Cds≦Cdi+Cgs+Cxd
の関係を満たす、付記5ないし7のいずれかに記載の半導体整流器。
[付記15]
前記トランジスタは、GaN半導体層を有し、且つ前記ソース電極、前記ドレイン電極および前記ゲート電極が、同じ側に位置する、付記1ないし14のいずれかに記載の半導体整流器。
[付記16]
前記トランジスタは、SiC半導体層を有し、且つ前記ソース電極および前記ゲート電極と前記ドレイン電極とが、互いに反対側に位置する、付記1ないし14のいずれかに記載の半導体整流器。
[付記17]
前記トランジスタの前記ソース電極に、前記トランジスタの前記カソード電極が導通接合されている、付記1ないし16のいずれかに記載の半導体整流器。
Claims (17)
- ソース電極、ドレイン電極およびゲート電極を有するトランジスタと、
アノード電極およびカソード電極を有するダイオードであって、前記アノード電極は前記ゲート電極に導通し、前記カソード電極は前記ソース電極に導通するダイオードと、を備える、半導体整流器。 - 前記トランジスタは、ノーマーリーオン型である、請求項1に記載の半導体整流器。
- 前記アノード電極と前記ゲート電極との導通経路に介在する第1抵抗器を備える、請求項1または2に記載の半導体整流器。
- 前記第1抵抗器は、前記トランジスタおよび前記ダイオードの少なくともいずれかと一体的に形成されている、請求項3に記載の半導体整流器。
- 前記ダイオードに対して並列に接続されたコンデンサを備える、請求項1ないし4のいずれかに記載の半導体整流器。
- 前記コンデンサに対して直列に接続された第2抵抗器を備える、請求項5に記載の半導体整流器。
- 前記第2抵抗器は、前記トランジスタおよび前記ダイオードの少なくともいずれかと一体的に形成されている、請求項6に記載の半導体整流器。
- 前記トランジスタは、GaN半導体層またはSiC半導体層を有する、請求項1ないし7のいずれかに記載の半導体整流器。
- 前記ダイオードは、Siショットキーバリアダイオードである、請求項1ないし8のいずれかに記載の半導体整流器。
- 前記トランジスタの耐圧は、前記ダイオードの耐圧よりも高い、請求項1ないし9のいずれかに記載の半導体整流器。
- 前記トランジスタと前記ダイオードとが、同一の半導体基板を共有している、請求項1ないし10のいずれかに記載の半導体整流器。
- 前記ダイオードの閾値電圧が、0.8V以下である、請求項1ないし11のいずれかに記載の半導体整流器。
- 前記トランジスタの前記ドレイン電極および前記ソース電極間の静電容量Cds、前記ゲート電極および前記ソース電極間の静電容量Cgsおよび前記ダイオードの静電容量Cdiが、
2Cds≦Cdi+Cgs
の関係を満たす、請求項1ないし12のいずれかに記載の半導体整流器。 - 前記トランジスタの前記ドレイン電極および前記ソース電極間の静電容量Cds、前記ゲート電極および前記ソース電極間の静電容量Cgs、前記ダイオードの静電容量Cdiおよび前記コンデンサの静電容量Cxdが、
2Cds≦Cdi+Cgs+Cxd
の関係を満たす、請求項5ないし7のいずれかに記載の半導体整流器。 - 前記トランジスタは、GaN半導体層を有し、且つ前記ソース電極、前記ドレイン電極および前記ゲート電極が、同じ側に位置する、請求項1ないし14のいずれかに記載の半導体整流器。
- 前記トランジスタは、SiC半導体層を有し、且つ前記ソース電極および前記ゲート電極と前記ドレイン電極とが、互いに反対側に位置する、請求項1ないし14のいずれかに記載の半導体整流器。
- 前記トランジスタの前記ソース電極に、前記トランジスタの前記カソード電極が導通接合されている、請求項1ないし16のいずれかに記載の半導体整流器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017236708 | 2017-12-11 | ||
JP2017236708 | 2017-12-11 | ||
PCT/JP2018/043398 WO2019116868A1 (ja) | 2017-12-11 | 2018-11-26 | 半導体整流器 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2019116868A1 true JPWO2019116868A1 (ja) | 2020-12-24 |
Family
ID=66819632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019559523A Pending JPWO2019116868A1 (ja) | 2017-12-11 | 2018-11-26 | 半導体整流器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11476247B2 (ja) |
JP (1) | JPWO2019116868A1 (ja) |
DE (1) | DE112018006307T5 (ja) |
WO (1) | WO2019116868A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143779A (en) * | 1976-05-25 | 1977-11-30 | Toshiba Corp | Input protection circuit |
JPS6451664A (en) * | 1987-08-24 | 1989-02-27 | Fujitsu Ltd | Semiconductor device |
JP2008198735A (ja) * | 2007-02-09 | 2008-08-28 | Sanken Electric Co Ltd | 整流素子を含む複合半導体装置 |
JP2009182107A (ja) * | 2008-01-30 | 2009-08-13 | Furukawa Electric Co Ltd:The | 半導体装置 |
JP2010103288A (ja) * | 2008-10-23 | 2010-05-06 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP2012231129A (ja) * | 2011-04-11 | 2012-11-22 | Internatl Rectifier Corp | Iii−v族トランジスタとiv族ダイオードを含む積層複合デバイス |
JP2016134435A (ja) * | 2015-01-16 | 2016-07-25 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9755630B2 (en) * | 2009-04-30 | 2017-09-05 | The United States of America as represented by the Secretary of the Government | Solid-state circuit breakers and related circuits |
JP2014027253A (ja) * | 2012-06-22 | 2014-02-06 | Toshiba Corp | 整流回路 |
US9887619B2 (en) * | 2014-06-23 | 2018-02-06 | Infineon Technologies Austria Ag | System and method for a normally-on switched mode power supply |
EP3266100A1 (en) * | 2014-12-16 | 2018-01-10 | John Wood | A power coupler |
JP6975530B2 (ja) | 2015-12-25 | 2021-12-01 | 出光興産株式会社 | 半導体素子及びそれを用いた電気機器 |
US10510800B2 (en) * | 2016-02-09 | 2019-12-17 | The Penn State Research Foundation | Device comprising a light-emitting diode and a Schottky barrier diode rectifier, and method of fabrication |
-
2018
- 2018-11-26 JP JP2019559523A patent/JPWO2019116868A1/ja active Pending
- 2018-11-26 US US16/767,428 patent/US11476247B2/en active Active
- 2018-11-26 WO PCT/JP2018/043398 patent/WO2019116868A1/ja active Application Filing
- 2018-11-26 DE DE112018006307.0T patent/DE112018006307T5/de active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143779A (en) * | 1976-05-25 | 1977-11-30 | Toshiba Corp | Input protection circuit |
JPS6451664A (en) * | 1987-08-24 | 1989-02-27 | Fujitsu Ltd | Semiconductor device |
JP2008198735A (ja) * | 2007-02-09 | 2008-08-28 | Sanken Electric Co Ltd | 整流素子を含む複合半導体装置 |
JP2009182107A (ja) * | 2008-01-30 | 2009-08-13 | Furukawa Electric Co Ltd:The | 半導体装置 |
JP2010103288A (ja) * | 2008-10-23 | 2010-05-06 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP2012231129A (ja) * | 2011-04-11 | 2012-11-22 | Internatl Rectifier Corp | Iii−v族トランジスタとiv族ダイオードを含む積層複合デバイス |
JP2016134435A (ja) * | 2015-01-16 | 2016-07-25 | 三菱電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20200388610A1 (en) | 2020-12-10 |
US11476247B2 (en) | 2022-10-18 |
DE112018006307T5 (de) | 2020-08-27 |
CN111433897A (zh) | 2020-07-17 |
WO2019116868A1 (ja) | 2019-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7405469B2 (en) | Semiconductor device and method of manufacturing the same | |
US9659912B2 (en) | Low-inductance circuit arrangement comprising load current collecting conductor track | |
US9196572B2 (en) | Power semiconductor module | |
US8587105B2 (en) | Semiconductor device | |
US11955411B2 (en) | Semiconductor device | |
JP4349364B2 (ja) | 半導体装置 | |
US11990455B2 (en) | Semiconductor device | |
US20230187431A1 (en) | Semiconductor module | |
JP2020188177A (ja) | 半導体装置 | |
US20240014193A1 (en) | Semiconductor device | |
JPWO2019116868A1 (ja) | 半導体整流器 | |
US20040041230A1 (en) | Semiconductor package for series-connected diodes | |
CN111433897B (zh) | 半导体整流器 | |
JP2016195223A (ja) | 半導体装置及びその製造方法 | |
JP2020077694A (ja) | 半導体装置 | |
JP7010036B2 (ja) | 半導体モジュール | |
US20190258302A1 (en) | Power supply module | |
JP2017050441A (ja) | 半導体装置 | |
US9362221B2 (en) | Surface mountable power components | |
JP4375077B2 (ja) | 半導体保護装置 | |
US20230014848A1 (en) | Semiconductor device | |
US20230140922A1 (en) | Current detection resistor and current detection apparatus | |
JP7252248B2 (ja) | 半導体装置 | |
JP2016201442A (ja) | 半導体装置及び三端子コンデンサ | |
JP2008054495A (ja) | 電流印加されたパワー回路のための低インダクタンスのパワー半導体モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210727 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220809 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221005 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230329 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20230329 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20230406 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20230411 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20230623 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240419 |